Material design and mechanism interpretation of metal oxide nanofibers for improving gas sensitivity

Coordination Chemistry Reviews, Год журнала: 2025, Номер 531, С. 216492 - 216492

Опубликована: Фев. 10, 2025

Язык: Английский

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Effect of copper substitution on the structural, optical, and magnetic properties of β-Ga₂O₃ powders

Applied Physics A, Год журнала: 2025, Номер 131(3)

Опубликована: Фев. 5, 2025

Язык: Английский

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Gallium behavior and isotopic compositions in marine siliceous sediments from the southern Mariana Trench

Global and Planetary Change, Год журнала: 2025, Номер unknown, С. 104704 - 104704

Опубликована: Янв. 1, 2025

Язык: Английский

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Effects of Cu, Ag, and Au Elements Doping on the Electronic and Optical Properties of β-Ga₂O₃ via First-Principles Calculations

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Фев. 27, 2025

β-Ga2O3, as a semiconductor material with an ultrawide band gap (Eg > 4.8 eV), emerges promising candidate for ultraviolet (UV)-transparent semiconductors. Its distinctive property of high transparency from visible light to the region gives it broad application prospects in fields deep UV light-emitting diodes (LEDs), lasers, and electronic devices. This study employed first-principles calculations utilizing generalized gradient approximation+ U (GGA+U) method investigate impact doping β-Ga2O3 transition metals including copper (Cu), silver (Ag), gold (Au) on its structure optical properties. The findings reveal that under oxygen (O)-rich conditions, formation energy doped system is lower compared gallium (Ga)-rich conditions. And Cu-doped demonstrated possess lowest energy, indicating enhanced stability β-Ga2O3. Additionally, intrinsic calculated be 4.853 eV, whereas gaps metal (TM)-doped are significantly reduced. Specifically, Cu-doped, Ag-doped, Au-doped 1.228, 0.982, 1.648 respectively. reduction can attributed introduction impurity levels by metals, which modify electron distribution atoms vicinity Fermi level. Remarkably, exhibits superior absorption performance, incorporation such Cu, Ag, Au facilitates expansion range. transformation not only enhances material's light-harvesting capability but also improves providing crucial theoretical foundation development novel β-Ga2O3-based optoelectronic

Язык: Английский

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Solution-Processed Gallium Oxide Semiconductor Nanomaterials Via Surface Chemical Activity of Liquid Metals

Опубликована: Янв. 1, 2025

The fourth-generation semiconductor material, gallium oxide (Ga2O3) has received extensive attention for its wide bandgap, ultra-high breakdown electric field, high temperature resistance, and better radiation resistance. Ga2O3 nanomaterials are primarily synthesized through the thermal treatment of oxyhydroxide (GaOOH), but synthesis methods GaOOH depend on complex reaction process, pressure, precision equipment other conditions, resulting applicability is significantly limited. Herein, a straightforward, flexible, environmentally friendly, maneuverable method synthesizing presented. Under ambient when liquid metals (LMs) were immersed in deionized water (DI water), Ga atoms their surface can spontaneously capture oxygen oxygen-containing groups, thereby transforming into nano-GaOOH. Moreover, LMs exhibit tension fluidity, which facilitates easy detachment from under mechanical agitation. Furthermore, annealed nanomaterials. This strategy grounded principles sustainability efficiency, mitigates unsafe factors, reduces energy consumption, be implemented large scale. approach plays crucial role advancing modern technology holds significant practical implications as well promising development prospects.

Язык: Английский

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Realizing High Stable Lithium Storage by Self-Healing Ga-Based Anode Designs

ACS Applied Electronic Materials, Год журнала: 2025, Номер unknown

Опубликована: Фев. 11, 2025

Язык: Английский

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A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges

Advanced Electronic Materials, Год журнала: 2025, Номер unknown

Опубликована: Фев. 10, 2025

Abstract In recent years, gallium oxide (Ga 2 O 3 ) has drawn considerable research interest as an ultrawide‐bandgap semiconductor due to its promising applications in the power electronics, photodetection, and gas sensing. Moreover, Ga heterojunctions have emerged a approach address key limitations of standalone material—most notably, lack p‐type doping capability. One application areas for is ultraviolet (UV) which gained significant attention yet remains relatively nascent field with vast potential further exploration optimization. This review provides detailed overview current state‐of‐the‐art technology, highlighting advancements, challenges, emerging strategies aimed at overcoming these challenges. Specifically, it examines deep‐UV analysing compatible electrode materials assessing various substrates suitable growth enhance device performance. comprehensive designed serve essential resource researchers engineers working ‐based heterojunctions, especially UV photodetection. Written needs new entrants mind, aims build robust foundational understanding supporting ongoing innovation expansion this field.

Язык: Английский

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Mg‐doped α‐Ga₂O₃ Nanorods for the Construction of Photoelectrochemical‐Type Self‐Powered Solar Blind UV Photodetectors and Underwater Imaging Application

Advanced Science, Год журнала: 2025, Номер unknown

Опубликована: Фев. 26, 2025

Abstract Underwater imaging technologies are increasingly crucial for environmental monitoring and resource exploration. However, the development of advanced photodetectors such applications faces significant challenges, including interference from ambient visible infrared light, adaptation to underwater environments, cost‐effectiveness. Photoelectrochemical‐type solar‐blind (PEC‐SBPDs) based on wide bandgap semiconductors have shown great promise in overcoming these challenges. Here, a novel approach enhance performance α‐Ga 2 O 3 ‐based PEC‐SBPDs is presented through Mg‐doping. By employing low‐cost hydrothermal synthesis technique, Mg‐doped nanorod arrays fabricated, which induces formation V ‐Mg Ga complexes that enhances interfacial catalytic activity improves transport photogenerated carriers. The optimized exhibits remarkable 435% increase photocurrent response compared undoped , with peak responsivity 34.54 mA W −1 . A 5 × PEC‐SBPD array nanorods successfully demonstrated imaging, achieving clear efficient challenging conditions. This study not only highlights superior environments but also opens new avenues high‐performance self‐powered sensing, other related applications.

Язык: Английский

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Variations in the Mineral Composition of Houpoea Officinalis Flowers at Different Stages of Development

Horticulturae, Год журнала: 2025, Номер 11(4), С. 387 - 387

Опубликована: Апрель 5, 2025

Houpoea officinalis (H. officinalis) flowers are rich in a spectrum of bioactive compounds and mineral nutrients. The availability balance elements directly impact the morphogenesis flower organs, which play pivotal roles various physiological biochemical processes that drive development. However, relatively little is known about changes composition occur during development H. officinalis. objective this study to analyze variations 22 contents pistil, stamens, petals at four stages. amount (Na, Mg, K, Ca, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Sr, Sn, Al, Ti, Ga, Cd, Ba, Tl, Pb, Bi) these samples was determined using atomic absorption spectroscopy inductively coupled plasma mass spectrometry. Results showed macroelements such as potassium (K, 25.80–48.06 mg/g) calcium (Ca, 17.27–31.00 mg/g), well microelements like zinc (Zn, 445.17–1553.16 μg/g) iron (Fe, 324.27–622.31 μg/g). Notably, pistil part found harbor more significant concentration early developmental stages flowers. Correlation analysis PCA have effectively exposed pronounced association between accumulation patterns their corresponding organs. These findings will provide detailed information distribution different help encourage researchers enhance quality for human consumption.

Язык: Английский

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Enhanced Performance UV photodetectors based on the β-Ga2O3/GaN photodiode of the reversed substitution growth with introduction nucleation layer of GaON by oxygen plasma treatment

Materials Today Physics, Год журнала: 2025, Номер unknown, С. 101729 - 101729

Опубликована: Апрель 1, 2025

Язык: Английский

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