Low-temperature growth and characterization of β-Ga2O3 thin films by ECR-PEMOCVD

Materials Science in Semiconductor Processing, Год журнала: 2025, Номер 194, С. 109588 - 109588

Опубликована: Апрель 22, 2025

Язык: Английский

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Research on the Ga₂O₃/ZnGa₂O₄ mixed-phase films and solar-blind photodetectors prepared directly by annealing Zn alloying Ga₂O₃ films

Journal of Materials Chemistry C, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

The transition from a single-phase to mixed-phase thin film forms heterogeneous interfaces that significantly enhance solar-blind photodetector performance.

Язык: Английский

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Intelligent Triboelectric Sliding Bearing for Gas leak Self-sensing and Mechanical Fault Self-diagnosis in Green Ammonia Production

Nano Energy, Год журнала: 2025, Номер unknown, С. 111060 - 111060

Опубликована: Апрель 1, 2025

Язык: Английский

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Solution-Processed Gallium Oxide Semiconductor Nanomaterials via Surface Chemical Activity of Liquid Metals

Surfaces and Interfaces, Год журнала: 2025, Номер 66, С. 106599 - 106599

Опубликована: Апрель 29, 2025

Язык: Английский

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The Effect of Air Annealing on the Optical and Luminescence Properties of Bi-Doped Β-Ga2o3 Single Crystals

Опубликована: Янв. 1, 2025

Язык: Английский

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Simulation and experimentation of iron-doped liquid metal-based gallium oxide photocatalysts for environmental applications harnessing solar energy

Environmental Science and Pollution Research, Год журнала: 2025, Номер unknown

Опубликована: Май 8, 2025

Язык: Английский

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Influences of Sn doping on the properties of Ga2O3 thin film and ultraviolet photodetector fabricated via sol-gel and spin-coating methods

Digest Journal of Nanomaterials and Biostructures, Год журнала: 2025, Номер 20(2), С. 465 - 480

Опубликована: Май 15, 2025

Gallium oxide (Ga2O3) has been considered as a promising ultrawide bandgap material, renowned for its exceptional breakdown electric field and stability. External doping serves an effective method modulating the characteristics of Ga2O3 materials devices. In this study, Sn-doped thin films photodetectors were fabricated by sol-gel spin-coating techniques. To minimize usage stabilizer solvent, 1,2-propanediamine was incorporated into precursor solution stabilizing agent. The impact varying Sn concentrations on detectors investigated. experimental findings confirm successful formation Ga2O3, wherein external enhances crystallinity Ga2O3. Furthermore, optimal concentration contributes to improved film compactness. Elements O, Ga, are uniformly distributed within leads reduction in direct band gap, augmentation photoluminescence intensity, suppression dark current detectors. However, improvement certain aspects comes at cost reduced response speed

Язык: Английский

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Synthesis and Upconversion Luminescence Fine-tuning of Yb³⁺/Ho³⁺-Doped Indium and Gallium Oxide Nanoparticles

Inorganic Chemistry, Год журнала: 2024, Номер 63(37), С. 17032 - 17042

Опубликована: Сен. 2, 2024

Rare earth (RE) dopants can modulate the bandgap of oxides indium and gallium provide extra upconversion luminescence (UCL) abilities. However, relevant UCL fine-tuning strategies energy mechanisms have been less studied. In this research, InGaO, Ho

Язык: Английский

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