A two-dimensional AlN/Zr2CO2 heterojunction with favorable photocurrent and carrier mobility

Journal of Alloys and Compounds, Год журнала: 2025, Номер unknown, С. 179127 - 179127

Опубликована: Фев. 1, 2025

Язык: Английский

---

Ultra-wideband and multi-frequency switchable terahertz absorber based on vanadium dioxide

Solid State Communications, Год журнала: 2025, Номер unknown, С. 115884 - 115884

Опубликована: Фев. 1, 2025

Язык: Английский

---

Self-powered photodetector of GaN/Sc₂CCl₂ heterojunction with high carrier mobility and polarization sensitivity

Physical Chemistry Chemical Physics, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

GaN/Sc 2 CCl heterojunction carrier mobility reaches up to 5670 cm V −1 s and photocurrent 12.78 a 0 per photon.

Язык: Английский

---

Ultrahigh photocurrents and polarization sensitivity of BC6N/Janus MoSSe heterostructure photodetector with asymmetric contacts

Diamond and Related Materials, Год журнала: 2025, Номер unknown, С. 111965 - 111965

Опубликована: Янв. 1, 2025

Язык: Английский

---

GaN/HfGe2N4 Heterojunction with Promising Project for Photocatalyst and Photodetector Applications

Surfaces and Interfaces, Год журнала: 2025, Номер 58, С. 105783 - 105783

Опубликована: Янв. 9, 2025

Язык: Английский

---

Ammonia gas sensors based on multi-wall carbon nanofiber field effect transistors by using gate modulation

Colloids and Surfaces A Physicochemical and Engineering Aspects, Год журнала: 2024, Номер unknown, С. 135563 - 135563

Опубликована: Окт. 1, 2024

Язык: Английский

---

Study on the Photoelectric properties of Series Heterojunctions Based on g-GaN

Chinese Journal of Physics, Год журнала: 2025, Номер unknown

Опубликована: Март 1, 2025

Язык: Английский

---

Design and analysis of monolayer GaN-boron phosphide lateral heterostructures for ultraviolet photodetection and rectification

Applied Surface Science, Год журнала: 2025, Номер unknown, С. 162428 - 162428

Опубликована: Янв. 1, 2025

Язык: Английский

---

Direct Z-scheme SnS2/InS heterostructure for efficient visible-light photocatalytic hydrogen evolution

International Journal of Hydrogen Energy, Год журнала: 2025, Номер 111, С. 95 - 104

Опубликована: Фев. 25, 2025

Язык: Английский

---

van der Waals ZnO/HfSn₂N₄ Heterojunction with Exceptional Photoresponse for Photodetectors

ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(43), С. 58802 - 58810

Опубликована: Окт. 21, 2024

Two-dimensional van der Waals heterojunctions represent a promising avenue for spectrum of optoelectronic endeavors. Nonetheless, their deployment has been somewhat constrained by the suboptimal efficiency photocurrent generated. In this article, ZnO/HfSn2N4 heterojunction is proposed to achieve high photoresponse efficiency. First-principles calculations are utilized confirm that possesses thermal stability with direct bandgap (1.36 eV). It exhibits light absorption coefficient and carrier mobility (2.51 × 103 cm2 V-1 s-1), biaxial strain significant effect on modulation band structure. As tensile increases, changes nonlinearly, transitioning from type-II type-I heterojunction. When compressive decreases. Quantum transport simulations employed calculate density states transmission model, verifying its excellent (a peak reaching 4.93 a02/photon an extinction ratio 75.1). shows potentially efficient photodetector.

Язык: Английский

---