First‐Principles Study of the C‐ and Si‐Doped Buckled Honeycomb PN Monolayer DOI Open Access
Võ Văn Ớn, Chu Viet Ha, J. Guerrero-Sánchez

и другие.

Advanced Theory and Simulations, Год журнала: 2023, Номер 7(1)

Опубликована: Окт. 11, 2023

Abstract In this work, the effects of doping with carbon (C) and silicon (Si) on electronic magnetic properties phosphorus nitride (PN) monolayer are investigated. PN is stable, exhibiting semiconductor nature indirect band gap 1.81(2.89) eV calculated by standard Perdew–Burke–Ernzerhof (hybrid HSE06) functional. C Si impurities prefer at N P sublattices, respectively. slightly magnetized 25% total moment 0.20 . The magnetization stronger in remaining cases moments 1.00 Magnetic produced mainly impurities. addition, codoping also investigated, which depends strongly interatomic distance between Specifically, inter‐dopant interactions preserve non‐magnetic monolayer, but significantly reduce energy gap. However, further separating these dopants leads to emergence magnetism up 1.97 Results may introduce doping‐based effective method induce feature‐rich buckled honeycomb monolayer. Such that, C‐ Si‐doped sheets recommended for spintronic applications considering their nature.

Язык: Английский

Exploration on the application of copper oxide particles doped janus ZrSSe in detecting dissolved gases in oil-immersed transformers: A DFT study DOI
Hao Wu, Jie Fang, Shuai Yuan

и другие.

Materials Today Chemistry, Год журнала: 2024, Номер 38, С. 102038 - 102038

Опубликована: Апрель 10, 2024

Язык: Английский

Процитировано

12

Single transition metal atom catalysts on defective VSeTe monolayer for efficient ORR DOI

Lujing Zhao,

Changmin Shi, Guangliang Cui

и другие.

Chemical Physics, Год журнала: 2025, Номер unknown, С. 112715 - 112715

Опубликована: Март 1, 2025

Язык: Английский

Процитировано

1

Regulating the Electronic and Magnetic Properties of a SnSSe Janus Monolayer toward Optoelectronic and Spintronic Applications DOI
Tuan V. Vu, Chu Viet Ha, J. Guerrero-Sánchez

и другие.

ACS Applied Electronic Materials, Год журнала: 2024, Номер 6(5), С. 3647 - 3656

Опубликована: Май 13, 2024

In this work, efficient approaches to modify the electronic and magnetic properties of SnSSe monolayer are proposed. A pristine is a nonmagnetic two-dimensional (2D) semiconductor material with an energy gap 0.96(1.64) eV obtained from PBE (HSE06)-based calculations. Different single vacancies, divacancies, trivacancies make appearance middle-gap states tune structure without producing magnetism. Specifically, metallized by chalcogen vacancy. Meanwhile, large band-gap reductions on order 88.84%, 38.54%/65.63%, 43.75% take place upon creation Sn vacancy, Sn+S/Sn+Se divacancy, Sn+S+Se trivacancy, respectively. Significant magnetization induced doping transition metals. Consequently, total moments 1.00, 2.00, 3.00, 4.00 μB V, Cr, Mn, Fe atoms, these cases, produced mainly localized 3d electrons metal impurities. The V-/Fe- Cr-/Mn-doped systems exhibit feature-rich half-metallic diluted structures, As representative smallest energy, ordering in 2Cr-doped system further investigated. ferromagnetic spin-gapless nature found 2Cr-1 two neighboring Cr atoms. Further separating impurities allows antiferromagnetic nature. results presented herein may propose functionalization methods prospective optoelectronic spintronic 2D material.

Язык: Английский

Процитировано

6

Two-Dimensional Janus X2STe (X=B, Al) Monolayers: Effect of Surface Selectivity and Adsorption of Small Gas Molecules on Electronic and Optical Properties DOI Creative Commons
Y. Zengin, Y. Mogulkoc

Physical Chemistry Chemical Physics, Год журнала: 2024, Номер 26(23), С. 16603 - 16615

Опубликована: Янв. 1, 2024

This investigation delves into the adsorption characteristics of CO, NO, NO 2 , NH 3 and O on two-dimensional (2D) Janus group-III materials, specifically Al XY B XY.

Язык: Английский

Процитировано

5

Hole doping at Sn sublattice of the buckled honeycomb SnX (X = S and Se) monolayer: an efficient functionalization approach DOI Creative Commons
D.M. Hoat, J. Guerrero-Sánchez

Materials Advances, Год журнала: 2024, Номер 5(4), С. 1746 - 1755

Опубликована: Янв. 1, 2024

Stable honeycomb SnX (X = S and Se) monolayers are functionalized by doping with IA- IIIA-group atoms for spintronic applications.

Язык: Английский

Процитировано

3

Unveiling a novel silicene-like material: A DFT study on pentahexoctite-silicon and its optoelectronic characteristics DOI
K. A. L. Lima, Luiz Antônio Ribeiro

Computational Condensed Matter, Год журнала: 2024, Номер 39, С. e00897 - e00897

Опубликована: Март 5, 2024

Язык: Английский

Процитировано

3

Recent studies of theoretical gas sensing properties of 2D TMDC Janus materials DOI

Ahmet Serdar Kopar,

Arzu Coşkun,

Zeynep Elif Özerbaş

и другие.

Sensors and Actuators A Physical, Год журнала: 2025, Номер unknown, С. 116236 - 116236

Опубликована: Янв. 1, 2025

Язык: Английский

Процитировано

0

Enhanced gas sensing in transition metal-doped Ga2O3 monolayer DOI
Zi‐Han Chen, Hui Feng, Huahan Zhan

и другие.

Computational and Theoretical Chemistry, Год журнала: 2025, Номер 1247, С. 115145 - 115145

Опубликована: Фев. 12, 2025

Язык: Английский

Процитировано

0

Effect of strain and charge injection on pollutant molecule sensing using black phosphorene: A DFT study DOI
Maryam Mohammadi, Zahra Tavangar

Applied Surface Science, Год журнала: 2025, Номер unknown, С. 163114 - 163114

Опубликована: Март 1, 2025

Язык: Английский

Процитировано

0

Recent advancement in selective gas sensors and role of machine learning DOI

Pradyumn,

P.B. Barman, Anjan Sil

и другие.

Journal of Alloys and Compounds, Год журнала: 2025, Номер unknown, С. 180757 - 180757

Опубликована: Май 1, 2025

Язык: Английский

Процитировано

0