First‐Principles Study of the C‐ and Si‐Doped Buckled Honeycomb PN Monolayer DOI Open Access
Võ Văn Ớn, Chu Viet Ha, J. Guerrero-Sánchez

и другие.

Advanced Theory and Simulations, Год журнала: 2023, Номер 7(1)

Опубликована: Окт. 11, 2023

Abstract In this work, the effects of doping with carbon (C) and silicon (Si) on electronic magnetic properties phosphorus nitride (PN) monolayer are investigated. PN is stable, exhibiting semiconductor nature indirect band gap 1.81(2.89) eV calculated by standard Perdew–Burke–Ernzerhof (hybrid HSE06) functional. C Si impurities prefer at N P sublattices, respectively. slightly magnetized 25% total moment 0.20 . The magnetization stronger in remaining cases moments 1.00 Magnetic produced mainly impurities. addition, codoping also investigated, which depends strongly interatomic distance between Specifically, inter‐dopant interactions preserve non‐magnetic monolayer, but significantly reduce energy gap. However, further separating these dopants leads to emergence magnetism up 1.97 Results may introduce doping‐based effective method induce feature‐rich buckled honeycomb monolayer. Such that, C‐ Si‐doped sheets recommended for spintronic applications considering their nature.

Язык: Английский

Novel Insights into Strain‐Driven Modifications in Electronic, Optical, and Charge Distribution Properties of Janus γ‐Si2XY (X/Y = S, Se, Te) Monolayers DOI
Y. Mogulkoc, Y. Zengin,

Gozde Enekci

и другие.

Advanced Theory and Simulations, Год журнала: 2025, Номер unknown

Опубликована: Май 23, 2025

Abstract The exploration of 2D materials has progressed rapidly, resulting in notable advancements across a range technological domains, including nanoelectronics, photonics, and thermoelectric devices. These are distinguished by their exceptional structural electronic properties, which confer numerous advantages over 3D counterparts. While initial research is primarily focused on graphene, the discovery new polymorphic structures significantly expanded scope materials, introducing novel compounds such as transition metal dichalcogenides (TMDs), boron nitride, phosphorene. This study focuses analysis structural, electronic, optical properties monolayers γ‐Si 2 XY (X/Y = S, Se, Te), with an emphasis understanding behavior under strain physical phenomena induced asymmetric Janus structures. findings contribute to broader optimization enhancing potential for future applications.

Язык: Английский

Процитировано

0

Dual-configuration Pd4 facilitates Janus SnSSe monolayer capture of electrical equipment fault gases (C2H2, C2H4, CO): A DFT Study DOI

Guozhi Lin,

Haonan Xie, Hao Wu

и другие.

Colloids and Surfaces A Physicochemical and Engineering Aspects, Год журнала: 2024, Номер unknown, С. 136015 - 136015

Опубликована: Дек. 1, 2024

Язык: Английский

Процитировано

1

Theoretical evaluation of gas sensing and capturing characteristics on the point defective diboron dinitride monolayer DOI
Renhao Xu,

Zonggang Qiu,

Jiyuan Guo

и другие.

Journal of Physics and Chemistry of Solids, Год журнала: 2023, Номер 184, С. 111695 - 111695

Опубликована: Окт. 20, 2023

Язык: Английский

Процитировано

2

Functionalization of an ionic honeycomb KF monolayer via doping DOI Creative Commons
Huynh Anh Huy, Duy Khanh Nguyen, Chu Viet Ha

и другие.

Nanoscale Advances, Год журнала: 2023, Номер 5(17), С. 4480 - 4488

Опубликована: Янв. 1, 2023

Doping has been widely employed to functionalize two-dimensional (2D) materials because of its effectiveness and simplicity. In this work, the electronic magnetic properties pristine doped KF monolayers are investigated using first-principles calculations based on density functional theory (DFT). Phonon dispersion curves ab initio molecular dynamics (AIMD) snapshots indicate good stability material. The band structure shows an insulating behavior monolayer, with indirect gaps 4.80 (6.53) eV as determined PBE (HSE06) functional. Its ionic character is also confirmed by valence charge distribution Bader analysis, generated transfer from K-4s orbital F-2p orbital. at both anion cation sites explored N/O Ca/Sr dopants, respectively, due their dissimilar configuration in comparison that host atoms. It found monolayer significantly magnetized, where total moments 2.00 1.00 μB obtained via N O/Ca/Sr doping, respectively. Moreover, appearance new middle-gap energy states leads development a semiconductor nature, which regulated N-2p, O-2p, Ca-3d, Ca-4s, Sr-4d, Sr-5s orbitals. Further investigation codoping indicates magnetic-semiconductor nature preserved, synergistic effects dopants play key role codoped systems. results presented herein introduce doping efficient approach obtain prospective d0 spintronic materials, functionality not accounted for monolayer.

Язык: Английский

Процитировано

1

First‐Principles Study of the C‐ and Si‐Doped Buckled Honeycomb PN Monolayer DOI Open Access
Võ Văn Ớn, Chu Viet Ha, J. Guerrero-Sánchez

и другие.

Advanced Theory and Simulations, Год журнала: 2023, Номер 7(1)

Опубликована: Окт. 11, 2023

Abstract In this work, the effects of doping with carbon (C) and silicon (Si) on electronic magnetic properties phosphorus nitride (PN) monolayer are investigated. PN is stable, exhibiting semiconductor nature indirect band gap 1.81(2.89) eV calculated by standard Perdew–Burke–Ernzerhof (hybrid HSE06) functional. C Si impurities prefer at N P sublattices, respectively. slightly magnetized 25% total moment 0.20 . The magnetization stronger in remaining cases moments 1.00 Magnetic produced mainly impurities. addition, codoping also investigated, which depends strongly interatomic distance between Specifically, inter‐dopant interactions preserve non‐magnetic monolayer, but significantly reduce energy gap. However, further separating these dopants leads to emergence magnetism up 1.97 Results may introduce doping‐based effective method induce feature‐rich buckled honeycomb monolayer. Such that, C‐ Si‐doped sheets recommended for spintronic applications considering their nature.

Язык: Английский

Процитировано

1