Self-optimized contact in air-robust thermoelectric junction towards long-lasting heat harvesting

Nature Communications, Год журнала: 2025, Номер 16(1)

Опубликована: Фев. 10, 2025

Ensuring long-term reliable contacts in thermoelectric devices is particularly challenging due to their operation under high temperatures and has been one of the large obstacles field for application. Typically, thermodynamically driven atomic diffusion reactions often degrade contacts, leading increased contact resistivity ultimately limiting device's lifespan. Here, we report an unconventional self-optimized mechanism Sb/MgAgSb junction. Mg from MgAgSb Sb does not but instead optimizes its even after aging air 30 days. This unexpected automatic optimization arises carrier concentration MgAgSb, which enhances electron tunneling across interface, effectively reducing resistivity. Leveraging stable performance a two-pair device employing 100-day air-aged achieves impressive conversion efficiency 8.1% rare power density 0.41 W cm-2 294 K temperature gradient. These results underscore significant potential robust, heat harvesting. The self-optimization identified this work also offers valuable insights designing future junctions high-temperature applications. authors find Sb/MgAgSb. After aging, can achieve W/cm2 density, highlighting

Язык: Английский

---

Homogenizing composition to achieve high-performance Mg3Bi2-type thermoelectrics

Nano Energy, Год журнала: 2025, Номер 137, С. 110797 - 110797

Опубликована: Фев. 17, 2025

Язык: Английский

---

Enhancing Thermoelectric Performance: The Impact of Carbon Incorporation in Spin-Coated Al-Doped ZnO Thin Films

Coatings, Год журнала: 2025, Номер 15(1), С. 107 - 107

Опубликована: Янв. 19, 2025

In the present study, for first time, aluminum-doped zinc oxide (AZO) thin films with nanoinclusions of amorphous carbon have been synthesized via spin coating, and thermoelectric performances were investigated varying aging period solution, procedure nanoparticles’ addition, annealing atmosphere. The addition nanoparticles has pursued to introduce phonon scattering centers reduce thermal conductivity. All samples showed a strong orientation along [002] crystallographic direction, even though substrate is silica, an intensity diffraction peaks reaching its maximum in annealed presence hydrogen, generally decreasing by nanoparticles. Absolute values Seebeck coefficient improve when are added. At same electric conductivity higher sample 1 wt.% Ar 1% H2, both increasing absolute value temperature rise. Among all samples, lowest 1.25 W/(m∙K) was found at room temperature, highest power factor 111 μW/(m∙K2) 325 °C. Thus, introduction effectively reduced conductivity, while also factor, giving promising results further development AZO-based materials applications.

Язык: Английский

---

Prefer‐Oriented Ag₂Se Crystal for High‐Performance Thermoelectric Cooling

Advanced Functional Materials, Год журнала: 2024, Номер unknown

Опубликована: Окт. 21, 2024

Abstract Ag 2 Se‐based materials with promising room‐temperature thermoelectric performance have been known for decades. However, cooling devices based on bulk Se seldom reported, mainly due to the phase transition ≈400 K poses a grand challenge leg design and module integration. Herein, crystals preferred orientation prepared. A high carrier mobility of ≈1846 cm V −1 s power factor ≈31.2 µW −2 at room temperature has realized, results in zT ≈0.95 300 K. Importantly, by applying as contact layer, Ag/Ag Se/Ag joint prepared one‐step sintering. By maintaining pressure ≈10 MPa after sintering during reflow soldering, deleterious effect large thermal expansion can be alleviated. The resistance interface is low ≈2.9 µΩ , indicating negligible electrical parasitic loss. device 7 pairs (Bi, Sb) Te 3 fabricated it achieve maximum ≈2.90 W difference ≈70.4 hot‐side 350 K, demonstrating great potential applications.

Язык: Английский

---

Enhancing the Thermoelectric Performance of n‐Type Mg₃Sb₂‐Based Materials via Ag Doping

Small, Год журнала: 2024, Номер unknown

Опубликована: Ноя. 13, 2024

The n-type Mg

Язык: Английский

---

Sommerfeld–Bethe Analysis of ZT in Inhomogeneous Thermoelectrics

Journal of the Physical Society of Japan, Год журнала: 2025, Номер 94(2)

Опубликована: Янв. 14, 2025

Язык: Английский

---

Bonding Heterogeneity and Nanoprecipitation on Substituting the Anionic Framework in Mg₃Sb₂ for p‐Type Zintl Thermoelectrics

Small Structures, Год журнала: 2025, Номер unknown

Опубликована: Март 5, 2025

Designing zintl compounds with complex crystal structures and large unit cells containing heavy elements may inherit bonding heterogeneity‐induced lattice anharmonicity, leading to intrinsically low thermal conductivity. In this work, alloying‐induced heterogeneity in the extensively explored α‐Mg 3 (Sb, Bi) 2 phase due local atomic ordering, site preferences, prevailing heterogenous interfaces is evaluated p‐type Mg (Sb 1−2 x Bi Sn ) ‐based polyanionic nanocomposites for different alloying concentrations. The inherent susceptibility partial transition (trigonal → monoclinic) observed upon alloying, which driven by alterations patterns, localized distortion, secondary formation. At content ( ≤ 0.05), a trigonal Sn) observed, while higher ≥ 0.1), cubic nanophase emerges. A synergistic reduction conductivity enhanced power factor maximize zT ≈ 0.25(±0.05) at 673 K optimized 0.9 0.025 nanocomposites. study highlights structural transitions as an challenge, where dominant role of anionic sites becomes pivotal determining/deriving favorable functional properties compounds.

Язык: Английский

---

Cascade thermoelectrics: Cooling the cooler

The Innovation Materials, Год журнала: 2025, Номер unknown, С. 100135 - 100135

Опубликована: Янв. 1, 2025

Язык: Английский

---

Synthesis and thermal stability of topological semimetal R MnSb ₂ ( R = Yb, Sr, Ba, Eu)

Science and Technology of Advanced Materials, Год журнала: 2025, Номер unknown

Опубликована: Май 28, 2025

Язык: Английский

---

Defect engineering-induced Seebeck coefficient and carrier concentration decoupling in CuI by noble gas ion implantation

Applied Physics Letters, Год журнала: 2024, Номер 125(21)

Опубликована: Ноя. 18, 2024

Copper(I) iodide, CuI, is the leading $p$-type non-toxic and earth-abundant semiconducting material for transparent electronics thermoelectric generators. Defects play a crucial role in determining carrier concentration, scattering process, therefore performance of material. A result defect engineering, power factor thin film CuI was increased from $332\pm32$ {\mu}Wm$^{-1}$K$^{-2}$ to $578\pm58$ after implantation with noble gas ions (Ne, Ar, Xe). The due decoupling Seebeck coefficient electrical conductivity identified through changing mechanism. Ion causes abundant production Frenkel pairs, which were found suppress compensating donors scenario also supported by density functional theory calculations. donor suppression led significantly improved Hall increasing $6.5\times10^{19}\pm0.1\times10^{19}$ cm$^{-3}$ $11.5\times10^{19}\pm0.4\times10^{19}$ cm$^{-3}$. This work provides an important step forward development as conducting generators introducing beneficial point defects ion implantation.

Язык: Английский

---