Effect of Tensile Strain on the Electronic Structure, Optical Absorptivity, and Power Conversion Efficiency of the Bc6n/Zno Van Der Waals Heterostructure DOI

Wei Han,

You Xie, Yu-Ling Song

и другие.

Опубликована: Янв. 1, 2023

Van der Waals heterostructures (vdWHs) have garnered significant interest as unique structures for future nanoelectronic devices. A novel BC6N/ZnO vdWH was prepared by superimposing BC6N semiconductor wafers onto a hexagonal ZnO monolayer. The electronic structure, optical absorptivity, and power conversion efficiency (PCE) of the under tensile strain were studied using first-principles calculations. band structure exhibits type-I alignment with direct bandgap 1.92 eV. is transformed into type-II indirect when uniaxial biaxial strains increase to 10%. increased (from 2.20 eV) monotonically (0%–10%) but nearly independent strain. exhibited wide range strong absorption in ultraviolet (UV)–visible range; absorptivity curve red-shifted, showed UV region increasing PCE reached 22.5% 15.3% 10% strains, respectively. tunable excellent ultrahigh provide important guidance designing two-dimensional high-efficiency photovoltaic

Язык: Английский

Effect of Tensile Strain on the Electronic Structure, Optical Absorptivity, and Power Conversion Efficiency of the Bc6n/Zno Van Der Waals Heterostructure DOI

Wei Han,

You Xie, Yu-Ling Song

и другие.

Опубликована: Янв. 1, 2023

Van der Waals heterostructures (vdWHs) have garnered significant interest as unique structures for future nanoelectronic devices. A novel BC6N/ZnO vdWH was prepared by superimposing BC6N semiconductor wafers onto a hexagonal ZnO monolayer. The electronic structure, optical absorptivity, and power conversion efficiency (PCE) of the under tensile strain were studied using first-principles calculations. band structure exhibits type-I alignment with direct bandgap 1.92 eV. is transformed into type-II indirect when uniaxial biaxial strains increase to 10%. increased (from 2.20 eV) monotonically (0%–10%) but nearly independent strain. exhibited wide range strong absorption in ultraviolet (UV)–visible range; absorptivity curve red-shifted, showed UV region increasing PCE reached 22.5% 15.3% 10% strains, respectively. tunable excellent ultrahigh provide important guidance designing two-dimensional high-efficiency photovoltaic

Язык: Английский

Процитировано

0

Effect of Tensile Strain on the Electronic Structure, Optical Absorptivity, and Power Conversion Efficiency of the Bc6n/Zno Van Der Waals Heterostructure DOI

Wei Han,

You Xie, Yu-Ling Song

и другие.

Опубликована: Янв. 1, 2023

Van der Waals heterostructures (vdWHs) have garnered significant interest as unique structures for future nanoelectronic devices. A novel BC6N/ZnO vdWH was prepared by superimposing BC6N semiconductor wafers onto a hexagonal ZnO monolayer. The electronic structure, optical absorptivity, and power conversion efficiency (PCE) of the under tensile strain were studied using first-principles calculations. band structure exhibits type-I alignment with direct bandgap 1.92 eV. is transformed into type-II indirect when uniaxial biaxial strains increase to 10%. increased (from 2.20 eV) monotonically (0%–10%) but nearly independent strain. exhibited wide range strong absorption in ultraviolet (UV)–visible range; absorptivity curve red-shifted, showed UV region increasing PCE reached 22.5% 15.3% 10% strains, respectively. tunable excellent ultrahigh provide important guidance designing two-dimensional high-efficiency photovoltaic

Язык: Английский

Процитировано

0