Phase formation of nanosized InGaZnO4 obtained by the sol-gel method with different chelating agents DOI Open Access
G. M. Zirnik, A.S. Chernukha, Д.А. Учаев

и другие.

Nanosystems Physics Chemistry Mathematics, Год журнала: 2024, Номер 15(4), С. 520 - 529

Опубликована: Авг. 30, 2024

The production of nano-sized semiconductor oxide materials, such as indium-gallium-zinc (IGZO), will make it possible to use for the transistors manufacture using printing methods.The sol-gel method is one widely known and used methods producing materials.As known, a chelating reagent (complexing agent) can influence both synthesis process final phase composition.The results with various reagents: citric acid, ethylene glycol, oxalic urea, glycerol sucrose are presented.The samples were studied by X-ray diffraction.It was found that glycol reagents obtain homogeneous crystalline material at 900 • C YbFe 2 O 4 -type structure, R-3m (166) space group.Unit cell parameters crystallite size (Halder-Wagner method) InGaZnO single-phase calculated.KEYWORDS oxide, In-Ga-Zn-O, IGZO, method, complexing agent, reagent, formation, nanomaterial ACKNOWLEDGEMENTS This study represents an integration two diverse projects supported Russian Science Foundation (No. 24-19-00468; conceptualization, comparative analysis agents on processes, well detailed characterization IGZO-3, IGZO-4, IGZO-5, IGZO-6) Ministry Higher Education Federation (Goszadaniye No. 075-03-2024-117, project FSMG-

Язык: Английский

Enhancement of microstructural and magnetic properties of high spin Mn substituted nanocrystalline Ni–Mn–Cu–Zn ferrites DOI Creative Commons
Abdul Ahad, A. K. M. Akther Hossain

Heliyon, Год журнала: 2024, Номер 10(4), С. e26050 - e26050

Опубликована: Фев. 1, 2024

Mn-substituted Cu and Zn co-doped spinel-typed nano-crystalline ferrites having nominal composition Ni

Язык: Английский

Процитировано

6

Investigations of thermal, structural, optical, morphological and magnetic properties of chemical precipitation synthesized NiO nanoparticles for optoelectronic applications DOI

P. Kathiravan,

K. Thillaivelavan,

G. Viruthagiri

и другие.

Journal of the Indian Chemical Society, Год журнала: 2024, Номер 101(7), С. 101171 - 101171

Опубликована: Май 15, 2024

Язык: Английский

Процитировано

6

Highly stable aqueous carbon-based conductive ink for screen-printed planar flexible micro-supercapacitor DOI

Menghu Wang,

Jian Wang, Aili Wei

и другие.

Journal of Alloys and Compounds, Год журнала: 2023, Номер 976, С. 173125 - 173125

Опубликована: Дек. 12, 2023

Язык: Английский

Процитировано

13

Rare-earth high-entropy magnetoplumbite structure hexaluminates (La1/5Nd1/5Sm1/5Eu1/5Gd1/5)MAl11O19 (M = Mg, Zn) for thermal barrier coating applications with enhanced mechanical and thermal properties DOI
X.-T. Luo, Shuo Huang, Ruiqi Huang

и другие.

Ceramics International, Год журнала: 2024, Номер 50(12), С. 21281 - 21288

Опубликована: Март 19, 2024

Язык: Английский

Процитировано

5

Phase formation of nanosized InGaZnO4 obtained by the sol-gel method with different chelating agents DOI Open Access
G. M. Zirnik, A.S. Chernukha, Д.А. Учаев

и другие.

Nanosystems Physics Chemistry Mathematics, Год журнала: 2024, Номер 15(4), С. 520 - 529

Опубликована: Авг. 30, 2024

The production of nano-sized semiconductor oxide materials, such as indium-gallium-zinc (IGZO), will make it possible to use for the transistors manufacture using printing methods.The sol-gel method is one widely known and used methods producing materials.As known, a chelating reagent (complexing agent) can influence both synthesis process final phase composition.The results with various reagents: citric acid, ethylene glycol, oxalic urea, glycerol sucrose are presented.The samples were studied by X-ray diffraction.It was found that glycol reagents obtain homogeneous crystalline material at 900 • C YbFe 2 O 4 -type structure, R-3m (166) space group.Unit cell parameters crystallite size (Halder-Wagner method) InGaZnO single-phase calculated.KEYWORDS oxide, In-Ga-Zn-O, IGZO, method, complexing agent, reagent, formation, nanomaterial ACKNOWLEDGEMENTS This study represents an integration two diverse projects supported Russian Science Foundation (No. 24-19-00468; conceptualization, comparative analysis agents on processes, well detailed characterization IGZO-3, IGZO-4, IGZO-5, IGZO-6) Ministry Higher Education Federation (Goszadaniye No. 075-03-2024-117, project FSMG-

Язык: Английский

Процитировано

5