Advanced Functional Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Янв. 28, 2025
Abstract
Magnetoresistance
effects,
such
as
tunnel
magnetoresistance
and
giant
magnetoresistance,
play
pivotal
roles
in
spintronics,
where
the
coupling
between
spin
current
affects
electrical
resistance.
These
effects
are
fundamental
for
various
applications,
including
high‐density
information
storage,
signal
transmission,
processing.
With
growing
demand
magnetoresistance‐based
modern
devices
post‐Moore
era,
researchers
now
focusing
on
developing
using
2D
magnetic
materials.
materials
offer
several
advantages,
a
unique
layered
structure,
high
integration
density,
tunable
room‐temperature
ferromagnetism,
intriguing
magnetoresistive
properties.
This
review
starts
with
brief
introduction
to
their
typical
synthesis
routes,
followed
by
preview
of
some
classifications
In
particular,
different
applications
spintronics
critically
discussed.
Finally,
challenges
prospects
this
emerging
field
suggested.
work
highlights
importance
effect
advancing
technology,
offering
vital
many
fields
ranging
from
memory
neuromorphic
computing.
Abstract
The
bandgap
of
most
known
two‐dimensional
materials
can
be
tuned
by
hydrogenation,
although
certain
2D
lack
a
sufficient
wide
bandgap.
Currently,
it
would
perfect
to
design
non‐toxic,
low‐cost,
and
high‐performance
photocatalysts
for
photocatalytic
water
splitting
via
hydrogenation.
We
systematically
examine
the
impact
hydrogenation
on
optical
electronic
characteristics
GeC/g‐C
3
N
4
vdW
heterostructures
(vdWHs)
with
four
different
stacking
patterns
using
first‐principles
calculations.
phonon
spectra,
interlayer
distance,
binding
energies
ab
initio
molecular
dynamics
calculations
show
kinetic,
mechanical,
thermal
stability
vdWH
after
at
300,
500
800
K
possesses
anisotropic
Poisson's
ratio,
Young's
bulk
modulus,
suggesting
that
it's
promising
candidate
experimental
fabrication.
According
an
investigation
its
properties,
has
1.28
eV,
but
dramatically
increases
2.47
eV.
As
result
interface‐induced
doping,
states
in
g‐C
might
significantly
adjusted
coming
into
contact
hydrogenated
GeC
sheets.
exhibits
type‐II
semiconductor,
which
enhance
spatial
separation
electron‐hole
pairs
strong
red‐shift
absorption
coefficient
than
those
constituent
monolayers.
high
potential
drop
caused
significant
valence
conduction
band
offsets
effectively
separated
charge
carriers.
GeCH
2
/g‐C
is
highly
influenced
biaxial
compressive
strain
more
tensile
strain.
Our
theoretical
research
implies
tunable
behaviour
use
as
hole‐transport
material
solar
energy
harvesting,
nanoelectronic
optoelectronic
devices.
Journal of Materials Chemistry A,
Год журнала:
2025,
Номер
unknown
Опубликована: Янв. 1, 2025
Strong
optical
absorption,
high
carrier
mobility,
and
potential
photocatalytic
water
splitting
properties
of
MSiX
(M
=
Ga,
In;
X
S,
Se,
Te)
monolayers.
