Physica Scripta, Год журнала: 2024, Номер 99(10), С. 1059b7 - 1059b7

Опубликована: Сен. 19, 2024

Abstract This paper presents a comprehensive investigation into the electrical characteristics of perovskite solar cell. The n-i-p cell is based on low band gap rubidium–lead-bromide (RbPbBr 3 ) with an energy level 1.31 eV. study also evaluates impact high mobility two-dimensional GeS and SnS 2 as electron transport layers (ETLs) cell’s performance. These ETLs have wide provide hole blocking layer due to their valence band-offset. Additionally, thin film MoTe 1 eV considered complementary absorber for capturing near-infrared spectrum. focuses influence critical physical structural design parameters optimized device ETL exhibits power conversion efficiency (PCE) 25.03%, open circuit voltage 0.95 V, short current density 33 mA cm −2 , fill factor 80.31%. Similarly, achieves PCE 25.14%, 0.96 33.01 80.66%. Furthermore, statistical analysis conducted by calculating coefficient variation assess sensitivity measures operating temperature. results highlight that defects in layer, work function back contact, ambient temperature are can significantly Overall, utilization ETLs, combination perovskite, offers promising approach high-performance cells.

Язык: Английский