Electronic and Optical Properties of Type Ii Quantum Ring GaAs/Al<sub>x</sub>Ga<sub>1−x</sub>As in Applied Lateral Electric Field DOI

Rihab Sellami,

Afef Ben Mansour,

Mohamed Souhail Kehili

и другие.

Journal of nano research, Год журнала: 2025, Номер 87, С. 1 - 11

Опубликована: Март 26, 2025

A theoretical study of the effect applying a lateral electric field on type I and II GaAs/AlGaAs quantum ring with different Al concentration in barrier is presented. The states carriers was investigated using approximation effective mass. It’s showed that has great wavefunction energy carriers. transition point from to found increasing strength. For fields less than 4.75 x 10 -4 V/cm, II: symmetry electron ground state X. Above this threshold, it transitions : Γ. Also, effects linear non-linear optical properties studied structure illuminated incident intensity were studied. There an increase radiative lifetime notable decrease absorption coefficient refractive index field. noted (20%) greater (10 %) due confinement G-electron which not case X-electron. To best our knowledge, article first influence physical structures.

Язык: Английский

Enhancing power conversion efficiency of quantum dot solar cells by optimal material selection and optical filter incorporation using SCAPS-1D simulation DOI
Sayak Banerjee,

Anupam Chetia,

Dibyajyoti Saikia

и другие.

Journal of Optics, Год журнала: 2025, Номер unknown

Опубликована: Март 19, 2025

Язык: Английский

Процитировано

0
Electronic and Optical Properties of Type Ii Quantum Ring GaAs/Al<sub>x</sub>Ga<sub>1−x</sub>As in Applied Lateral Electric Field DOI

Rihab Sellami,

Afef Ben Mansour,

Mohamed Souhail Kehili

и другие.

Journal of nano research, Год журнала: 2025, Номер 87, С. 1 - 11

Опубликована: Март 26, 2025

A theoretical study of the effect applying a lateral electric field on type I and II GaAs/AlGaAs quantum ring with different Al concentration in barrier is presented. The states carriers was investigated using approximation effective mass. It’s showed that has great wavefunction energy carriers. transition point from to found increasing strength. For fields less than 4.75 x 10 -4 V/cm, II: symmetry electron ground state X. Above this threshold, it transitions : Γ. Also, effects linear non-linear optical properties studied structure illuminated incident intensity were studied. There an increase radiative lifetime notable decrease absorption coefficient refractive index field. noted (20%) greater (10 %) due confinement G-electron which not case X-electron. To best our knowledge, article first influence physical structures.

Язык: Английский

Процитировано

0