Developing a sustainable semiconductor hetero-system with Gd-Ho-Dy tri-doping in ZrO2 for enhanced performance and efficiency in advanced energy systems DOI
Shaan Bibi Jaffri, Khuram Shahzad Ahmad, Isaac Abrahams

и другие.

Optical Materials, Год журнала: 2024, Номер 154, С. 115712 - 115712

Опубликована: Июнь 19, 2024

Язык: Английский

Fabrication and OER/HER Electrochemical Activity of Sm, Al Assisted g-C3N4 Nanocomposite for Alkaline Water Splitting DOI Creative Commons
Fozia Iram, Abdulrahman Mallah, Muhammad Safdar

и другие.

Journal of Alloys and Compounds, Год журнала: 2025, Номер 1014, С. 178603 - 178603

Опубликована: Янв. 11, 2025

Язык: Английский

Процитировано

1

High‐Performance Electrode for Energy Storage Developed Using Single‐Source Precursor‐Driven Bas:Cos:La2S3 Trichalcogenide Semiconductor DOI
Shaan Bibi Jaffri, Khuram Shahzad Ahmad,

N. Maley

и другие.

physica status solidi (a), Год журнала: 2024, Номер 221(20)

Опубликована: Авг. 1, 2024

Using single‐source precursor route, this work reports the synthesis of novel chalcogenide heterosystem, i.e., BaS:CoS:La 2 S 3 trichalcogenide heterosystem. With narrowed band gap energy, expresses excellent photonic response with 3.47 eV tailored resulting from chemical synergism. This is marked by superior crystallinity and possessed an average crystallite size 18.29 nm. Morphologically, exists in form roughly spherical grains arranged irregular manner. The developed assessed for charge storage fabricating electrode using a nickel as support. In 0.1 m KOH background electrolyte, adorns excelled achieving specific capacitance 967.24 F g −1 . addition, power density 1659 W kg Fabricated retains original after different cycles. Regarding electrode–electrolyte interactions, fabricated shows minimal resistance, equivalent series resistance ( R s ) 1.42 Ω indicated impedance studies. Additional circuit elements, including CPE Y o = 2.17 × 10 −04 , n 0.71) ct (6.97 cm −2 ), are obtained fitting decorated electrode. Exhibiting stable behavior 43 h, synthesized material demonstrates profound durability functionality.

Язык: Английский

Процитировано

1

Developing a sustainable semiconductor hetero-system with Gd-Ho-Dy tri-doping in ZrO2 for enhanced performance and efficiency in advanced energy systems DOI
Shaan Bibi Jaffri, Khuram Shahzad Ahmad, Isaac Abrahams

и другие.

Optical Materials, Год журнала: 2024, Номер 154, С. 115712 - 115712

Опубликована: Июнь 19, 2024

Язык: Английский

Процитировано

0