Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS2 Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments DOI Creative Commons
Khalil Tamersit, Abdellah Kouzou, José Rodríguez

и другие.

Micromachines, Год журнала: 2024, Номер 16(1), С. 33 - 33

Опубликована: Дек. 28, 2024

Gate dielectrics are essential components in nanoscale field-effect transistors (FETs), but they often face significant instabilities when exposed to harsh environments, such as radioactive conditions, leading unreliable device performance. In this paper, we evaluate the performance of ultrascaled transition metal dichalcogenide (TMD) FETs equipped with vacuum gate dielectric (VGD) a means circumvent oxide-related instabilities. The nanodevice is computationally assessed using quantum simulation approach based on self-consistent solutions Poisson equation and transport under ballistic regime. evaluation includes analysis transfer characteristics, subthreshold swing, on-state off-state currents, current ratio, scaling limits. Simulation results demonstrate that investigated VGD TMD FET, featuring gate-all-around (GAA) configuration, TMD-based channel, thin dielectric, collectively compensates for low constant VGD, enabling exceptional electrostatic control. This combination ensures superior switching regime, achieving high ratio steep characteristics. These findings position GAA-VGD FET promising candidate advanced radiation-hardened nanoelectronics.

Язык: Английский

Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS2 Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments DOI Creative Commons
Khalil Tamersit, Abdellah Kouzou, José Rodríguez

и другие.

Micromachines, Год журнала: 2024, Номер 16(1), С. 33 - 33

Опубликована: Дек. 28, 2024

Gate dielectrics are essential components in nanoscale field-effect transistors (FETs), but they often face significant instabilities when exposed to harsh environments, such as radioactive conditions, leading unreliable device performance. In this paper, we evaluate the performance of ultrascaled transition metal dichalcogenide (TMD) FETs equipped with vacuum gate dielectric (VGD) a means circumvent oxide-related instabilities. The nanodevice is computationally assessed using quantum simulation approach based on self-consistent solutions Poisson equation and transport under ballistic regime. evaluation includes analysis transfer characteristics, subthreshold swing, on-state off-state currents, current ratio, scaling limits. Simulation results demonstrate that investigated VGD TMD FET, featuring gate-all-around (GAA) configuration, TMD-based channel, thin dielectric, collectively compensates for low constant VGD, enabling exceptional electrostatic control. This combination ensures superior switching regime, achieving high ratio steep characteristics. These findings position GAA-VGD FET promising candidate advanced radiation-hardened nanoelectronics.

Язык: Английский

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