Applied and Computational Engineering,
Год журнала:
2023,
Номер
23(1), С. 245 - 251
Опубликована: Ноя. 6, 2023
Gallium
Nitride
based
High
Electron
Mobility
Transistors
(GaN
HEMTs)
technology
has
made
significant
advancements,
revolutionizing
the
field
of
power
electronics.
With
their
unique
properties
such
as
high
breakdown
voltage,
frequency,
and
electron
mobility
high-power
capabilities,
GaN
HEMTs
offer
advantages
over
traditional
silicon-based
devices,
improved
density,
higher
operating
temperature,
enhanced
reliability.
have
shown
great
potential
in
sensing
applications,
gas
biosensors.
This
thesis
explores
advancements
trends
HEMT
technology,
including
crystal
growth
packaging
performance
optimization.
Despite
progress,
challenges
heat
dissipation,
production
costs,
yield
reliability
issues
need
to
be
addressed.
Future
research
directions
may
focus
on
improving
integration
with
other
technologies,
exploring
applications
emerging
fields
5G
communication,
addressing
these
challenges.
Overall,
is
set
play
a
pivotal
role
various
industries.
Electronics,
Год журнала:
2024,
Номер
13(15), С. 2937 - 2937
Опубликована: Июль 25, 2024
To
improve
the
breakdown
voltage
(BV),
a
GaN-based
high-electron-mobility
transistor
with
hybrid
AlGaN
back
barrier
(HBB-HEMT)
was
proposed.
The
constructed
using
Al0.25Ga0.75N
region
and
Al0.1G0.9N
region,
each
distinct
Al
composition.
Simulation
results
of
HBB-HEMT
demonstrated
(1640
V)
that
212%
higher
than
conventional
HEMT
(Conv-HEMT)
low
on-resistance
(0.4
mΩ·cm2).
Ultimately,
device
achieved
high
Baliga’s
figure
merit
(7.3
GW/cm2)
among
reported
devices
similar
size.
A
back-propagation
(BP)
neural
network-based
prediction
model
trained
to
predict
BV
for
enhanced
efficiency
in
subsequent
work.
calibrated,
achieving
correlation
coefficient
(R)
0.99
accuracy
95%
on
test
set.
indicated
BP
network
Levenberg–Marquardt
algorithm
accurately
predicted
forward
HBB-HEMT,
underscoring
feasibility
significance
models
designing
GaN
power
devices.
