2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO),
Год журнала:
2023,
Номер
unknown, С. 299 - 303
Опубликована: Июль 31, 2023
Flexible
thin
film
transistors
(TFTs)
were
fabricated
on
polyimide
(PI)
substrate
at
room
temperature
(RT).
The
channel
layer,
which
adopted
aluminum
doped
zinc
oxide
(AZO)
film,
was
deposited
by
the
co-sputtering
method
with
Al
and
ZnO
as
targets.
During
fabrication
process,
radio
frequency
(RF)
magnetron
sputtering
power
of
target
controlled
to
enhance
electrical
performance
AZO-TFTs.
When
RF
15
W,
device
achieved
optimal
on-off
current
ratio
$5.23
\times
10^{5}$.
Journal of Materials Chemistry C,
Год журнала:
2024,
Номер
12(16), С. 5654 - 5683
Опубликована: Янв. 1, 2024
Advances
in
processing
of
active
layers
organic
thin-film
transistor
(OTFT)-based
chemical
and
biological
sensors
have
enabled
significant
developments
their
performance,
achieving
part-per-billion
molar
concentration
limits
detection.
Analytical Chemistry,
Год журнала:
2024,
Номер
96(49), С. 19160 - 19182
Опубликована: Ноя. 27, 2024
This
Perspective
explores
the
revolutionary
advances
in
wearable
aptasensor
(WA)
technology,
which
combines
devices
and
aptamer-based
detection
systems
for
personalized,
real-time
health
monitoring.
The
leverage
specificity
sensitivity
of
aptamers
to
target
specific
molecules,
offering
broad
applications
from
continuous
glucose
tracking
early
diagnosis
diseases.
integration
data
analytics
artificial
intelligence
(AI)
allows
risk
prediction
guides
preventive
measures.
While
challenges
miniaturization,
power
efficiency,
security
persist,
these
hold
significant
potential
democratize
healthcare
reshape
patient-doctor
interactions.
IEEE Transactions on Electron Devices,
Год журнала:
2024,
Номер
71(4), С. 2431 - 2437
Опубликована: Фев. 21, 2024
This
study
aims
to
increase
the
output
current
of
amorphous
indium–gallium–zinc
oxide
(a-IGZO)
source-gated
transistor
(SGT)
through
technology
computer-aided
design
(TCAD)
simulation
and
experiment.
As
SGT
proves
be
useful
in
various
low-power
applications
wearable
devices,
low
characteristics
limit
adaptability
this
structure.
It
is
estimated
that
a
higher
level
achievable
by
optimizing
architecture
while
retaining
fast
saturation
characteristics.
The
structure
simulations
have
been
performed
with
adjusted
density-of-states
(DoS)
parameters
from
experiments;
made
TCAD
more
realistic
can
used
predict
results
fabricated
SGTs.
show
longer
source–channel
(SC)
overlap
thinner
channel
preferable;
SC
will
result
Mode
II
injection
dominating
over
I
injection.
occurs
at
edge
source
contact
near
region,
bulk
farthest
region
channel.
experiment
shows
exhibits
characteristics—that
linearly
increasing
gate
voltage.
From
study.
it
could
concluded
$210~\mu
\text{m}$
thickness
20
nm
length
notation="LaTeX">$5~\mu
optimized
provide
high
little
temperature
dependence.
Further
improvement
achieved
utilizing
lower
work
function
metal.
ACS Applied Electronic Materials,
Год журнала:
2024,
Номер
6(4), С. 2336 - 2348
Опубликована: Март 27, 2024
Organic
electrochemical
transistors
(OECTs)
are
gaining
interest
for
applications
in
neuromorphic
devices
and
biosensors.
Traditional
OECTs
use
aqueous
or
ionic
gel
electrolytes,
but
these
materials
often
limit
performance
wider
application
due
to
their
fluid
nature
poor
biocompatibility.
This
study
introduces
a
biodegradable,
flexible
solid-state
OECT
using
chitosan
biopolymer
electrolyte.
The
electrolyte
consists
of
chitosan,
dextran,
lithium
perchlorate
(LiClO4)-based
salt.
chitosan-based
feature
an
organic
poly(3,4-ethylenedioxythiophene)
polystyrene
sulfonate
semiconductor
channel
fabricated
screen
printing.
They
demonstrate
impressive
performance,
including
on-state
current
0.19
±
0.03
mA
at
low
0.6
V
bias
voltage,
high
on/off
ratio
0.3
×
103,
large
transconductance
0.416
0.05
mS.
Additionally,
show
remarkable
endurance
mechanical
robustness,
maintaining
stability
after
300
bending
cycles,
long-term
bending,
under
temperatures
ranging
from
30
75
°C.
Significantly,
the
breaking
down
without
toxic
byproducts
reducing
environmental
impact.
makes
them
promising
option
future
bioelectronics
wearable
technology
that
leverage
natural
biomaterials.
Nanomaterials,
Год журнала:
2024,
Номер
14(5), С. 466 - 466
Опубликована: Март 4, 2024
The
initial
electrical
characteristics
and
bias
stabilities
of
thin-film
transistors
(TFTs)
are
vital
factors
regarding
the
practical
use
electronic
devices.
In
this
study,
dependence
positive
stress
(PBS)
instability
on
an
threshold
voltage
(VTH)
its
origin
were
analyzed
by
understanding
roles
slow
fast
traps
in
solution-processed
oxide
TFTs.
To
control
VTH
TFTs,
indium
(InOx)
semiconductor
was
doped
with
aluminum
(Al),
which
functioned
as
a
carrier
suppressor.
concentration
oxygen
vacancies
decreased
Al
doping
increased,
causing
shift
InOx
(∆VTH)
caused
PBS
increased
exponentially
when
distinct
tendency
observed
gate
due
to
high
vertical
electric
field
dielectric.
addition,
recovery
behavior
reveal
influence
∆VTH
PBS.
Results
revealed
that
effect
trap
moved
direction;
occured
because
main
electron
location
away
from
interface
Fermi
level
approached
conduction
band
minimum.
Understanding
correlation
between
can
contribute
optimizing
fabrication
TFT-based
circuits
for
applications.
Technologies,
Год журнала:
2025,
Номер
13(1), С. 20 - 20
Опубликована: Янв. 2, 2025
This
paper
reviews
the
recent
development
of
organic–inorganic
hybrid
dielectric
materials
for
application
as
gate
dielectrics
in
thin-film
transistors
(TFTs).
These
consist
blending
high-k
inorganic
with
polymers,
and
their
resulting
properties
depend
on
amount
type
interactions
between
organic
phases.
The
amorphous
networks,
characterized
by
crosslinked
phases,
can
be
tailored
specific
applications,
including
TFTs.
As
materials,
they
offer
a
synergistic
combination
high
constants,
low
leakage
currents,
mechanical
flexibility,
crucial
next-generation
flexible
electronics.
Furthermore,
are
easily
processed
solution,
allowing
low-temperature
deposition
compatible
substrates.
Various
configurations
these
dielectrics,
such
bilayer
structures
polymer
nanocomposites,
discussed,
an
emphasis
potential
to
enhance
device
performance.
Despite
significant
advancements,
challenges
remain
optimizing
performance
stability
materials.
review
summarizes
progress
highlights
advantages
emerging
applications
low-temperature,
solution-processed
focus
integration
into
flexible,
stretchable,
wearable
electronic
devices.
