2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO),
Год журнала:
2023,
Номер
unknown, С. 299 - 303
Опубликована: Июль 31, 2023
Flexible
thin
film
transistors
(TFTs)
were
fabricated
on
polyimide
(PI)
substrate
at
room
temperature
(RT).
The
channel
layer,
which
adopted
aluminum
doped
zinc
oxide
(AZO)
film,
was
deposited
by
the
co-sputtering
method
with
Al
and
ZnO
as
targets.
During
fabrication
process,
radio
frequency
(RF)
magnetron
sputtering
power
of
target
controlled
to
enhance
electrical
performance
AZO-TFTs.
When
RF
15
W,
device
achieved
optimal
on-off
current
ratio
$5.23
\times
10^{5}$.
Materials,
Год журнала:
2025,
Номер
18(9), С. 1980 - 1980
Опубликована: Апрель 27, 2025
Solution-processed
metal
oxide
dielectrics
often
result
in
unstable
thin-film
transistor
(TFT)
performance,
hindering
the
development
of
next-generation
electronics.
In
this
study,
we
prepared
fluorine
(F)-doped
zirconium
(ZrO2)
dielectric
layers
using
a
chemical
solution
method
to
construct
TFTs.
The
characterization
by
X-ray
photoelectron
spectroscopy
(XPS)
revealed
that
appropriate
fluoride
doping
significantly
reduces
oxygen
vacancies
and
concentration
hydroxyl
groups,
thereby
suppressing
polarization
processes.
Subsequently,
electrical
properties
Al/F:ZrO2/n++Si
capacitors
were
evaluated,
demonstrating
optimized
10%
F:ZrO2
exhibits
low
leakage
current
density
stable
capacitance
across
wide
frequency
range.
Indium
zinc
(IZO)
TFTs
incorporating
then
fabricated.
These
devices
displayed
reliable
characteristics,
including
high
mobility
over
broad
range,
reduced
dual-sweep
hysteresis,
excellent
stability
under
positive-bias
stress
(PBS)
after
three
months
aging.
findings
indicate
use
fluorine-doped
ZrO2
is
versatile
strategy
for
achieving
high-performance
Materials,
Год журнала:
2024,
Номер
17(22), С. 5643 - 5643
Опубликована: Ноя. 19, 2024
Organic
thin-film
transistors
(OTFTs),
benefiting
from
a
low-temperature
process
(≤120
°C),
offer
promising
approach
for
the
monolithic
integration
of
MicroLED
structures
through
organic-last
integration.
Previous
research
has
demonstrated
that
small-molecule/polymer
binder-based
organic
semiconductor
deposition,
utilizing
vertical
phase
separation
mechanism,
can
achieve
good
device
uniformity
while
preserving
high
field-effect
carrier
mobility.
However,
stability
OTFTs
under
light
exposure
at
level
remains
underexplored.
This
study
investigates
effects
various
irradiation
conditions
on
and
delves
into
underlying
mechanisms
light-trapping
effect.
Based
these
findings,
we
propose
an
optimal
OTFT
design
tailored
driving
displays
operational
brightness,
ensuring
both
performance
stability.
Journal of Materials Chemistry C,
Год журнала:
2024,
Номер
12(35), С. 13707 - 13726
Опубликована: Янв. 1, 2024
This
review
summarizes
and
discusses
existing
literature
on
reliability
issues
of
amorphous
oxide
semiconductor
thin-film
transistors.
The
investigation
focuses
bias
stress,
electro-static
discharge,
bending,
radiation
reliability.
2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO),
Год журнала:
2023,
Номер
unknown, С. 299 - 303
Опубликована: Июль 31, 2023
Flexible
thin
film
transistors
(TFTs)
were
fabricated
on
polyimide
(PI)
substrate
at
room
temperature
(RT).
The
channel
layer,
which
adopted
aluminum
doped
zinc
oxide
(AZO)
film,
was
deposited
by
the
co-sputtering
method
with
Al
and
ZnO
as
targets.
During
fabrication
process,
radio
frequency
(RF)
magnetron
sputtering
power
of
target
controlled
to
enhance
electrical
performance
AZO-TFTs.
When
RF
15
W,
device
achieved
optimal
on-off
current
ratio
$5.23
\times
10^{5}$.
