Modelling and Simulation in Materials Science and Engineering, Год журнала: 2024, Номер 32(6), С. 065012 - 065012
Опубликована: Июнь 6, 2024
Abstract The application of semiconductors with optical properties has grown significantly in the development semiconductor photovoltaics. Here, we explore electronic and ternary transition metal sulfide Rb 2 Ni 3 S 4 by means density functional theory. From structural perspective, atoms are found to form a kagome-like lattice two-dimensional plane . our calculations, is be an indirect band gap ∼0.67 eV. Strong hybridization was observed between S-3 p Ni-3 d xz yz orbitals. Interestingly, flat noticed below Fermi level demonstrating one significant feature kagome lattice. exhibit activity both visible lower ultraviolet regions incident photon energies. response suggests this material may potential candidate for opto-electronic device, given its ability interact light across broad range wavelengths. This work expected motivate experimental group transport measurements provide new foundation optics.
Язык: Английский