Journal of Materials Science Materials in Electronics, Год журнала: 2024, Номер 35(27)
Опубликована: Сен. 1, 2024
Язык: Английский
Journal of Materials Science Materials in Electronics, Год журнала: 2024, Номер 35(27)
Опубликована: Сен. 1, 2024
Язык: Английский
Journal of the American Ceramic Society, Год журнала: 2024, Номер unknown
Опубликована: Окт. 16, 2024
Abstract NaNbO 3 (NN)‐based materials have attracted widespread attention due to their advanced energy storage performance and eco‐friendliness. However, achieving high recoverable densities ( W rec ) efficiency η typically requires ultrahigh electric fields E > 300 kV/cm), which can limit practical use. In this work, we present a synergistic strategy that employs the ferroelectric material Bi 0.5 Na TiO (BNT) augment P max linear 0.2 Sr 0.7 (BST) optimize – loops. Furthermore, two‐step sintering process is implemented preserve values under lower field. As result, ternary (1− x )(0.90NN‐0.10BNT)‐ BST was successfully prepared, of 5.1 J/cm 85% in = 0.20 samples at low field 290 kV/cm. Moreover, showed good frequency stability (1–200 Hz) temperature (27°C–100°C). These results provide guidance for development ceramics with properties fields.
Язык: Английский
Процитировано
1Small, Год журнала: 2024, Номер unknown
Опубликована: Дек. 18, 2024
Advancements in pulsed electronic power systems depend significantly on high-performance dielectric energy storage ceramics. Lead-free NaNbO
Язык: Английский
Процитировано
1Опубликована: Янв. 1, 2024
Abstract: Lead-free antiferroelectric (AFE) ceramics based on sodium niobate (NaNbO3, NN) have drawn garnered interest due to their remarkable energy storage capacity. However, The practical applications of pure NN been largely constrained by high loss density (Wloss) and low breakdown electric field (Eb) resulting from the field-induced AFE-ferroelectric (FE) phase transition. To address these issues, Bi Ti were introduced into A- B-sites ceramic chalcogenide structure, respectively. After that, Ta element was doped B-site (Na0.86Bi0.14)(Nb0.9Ti0.1)O3 samples, which effectively improved capacity ceramics. Finally, good properties (with Wrec approximately 2.41 J·cm-3 an efficiency about 90.88%) (Na0.86Bi0.14)(Nb0.75Ta0.15Ti0.1)O3 obtained via compositional modification under conditions a (Eb = 206.92 kV·cm-1). Therefore, results this study reveal that introduction tantalum is vible method improve dielectric
Язык: Английский
Процитировано
0Journal of Materials Science Materials in Electronics, Год журнала: 2024, Номер 35(27)
Опубликована: Сен. 1, 2024
Язык: Английский
Процитировано
0