Electrical contact between 2D material NbS2 and WSSe DOI

Jingjun Chen,

Zelong Ma, Danni Wang

и другие.

Physica E Low-dimensional Systems and Nanostructures, Год журнала: 2025, Номер unknown, С. 116179 - 116179

Опубликована: Янв. 1, 2025

Язык: Английский

High-efficiency photocatalyst and high-response ultraviolet photodetector based on the Ga2SSe@GaN heterojunctions DOI
Ke Qin, Enling Li, Yang Shen

и другие.

Surfaces and Interfaces, Год журнала: 2024, Номер 52, С. 104996 - 104996

Опубликована: Авг. 23, 2024

Язык: Английский

Процитировано

6

Point Defects in Hexagonal SiP Monolayer: A Systematic Investigation on the Electronic and Magnetic Properties DOI
Chu Viet Ha, R. Ponce‐Pérez, J. Guerrero-Sánchez

и другие.

Advanced Theory and Simulations, Год журнала: 2024, Номер 7(6)

Опубликована: Май 5, 2024

Abstract In this work, point defects are proposed to modify the electronic and magnetic properties of SiP monolayer. Pristine monolayer is a non‐magnetic semiconductor 2D material with energy gap 1.52(2.21) eV as predicted by PBE(HSE06) functional. Single Si vacancy (), Si+P divacancy substituting one P atom () magnetize significantly Herein, total moments between 1.00 2.00 obtained . contrast, no magnetism induced single exchanging pair Si‐P positions (). Moreover, significant magnetization also achieved doping Li Cu atoms ( ), well ). Total 0.84 1.42 obtained. Interestingly, half‐metallicity observed in systems. When atom, F, Cl, Br impurities reduce bandgap, preserving its nature. moment 1.26 I atom. Results presented herein may introduce defected doped systems prospective candidates for spintronic optoelectronic applications.

Язык: Английский

Процитировано

5

Preparation and performance study of electroplated Ni–W/diamond ultrathin dicing blades DOI
Lan Zhang, Hongyang Yu, Huizhong Ma

и другие.

Materials Science in Semiconductor Processing, Год журнала: 2024, Номер 175, С. 108280 - 108280

Опубликована: Фев. 28, 2024

Язык: Английский

Процитировано

4

First-principles study on the electronic properties and feasibility of photocatalytic water splitting on Z-scheme GaN/MoS2 heterostructure DOI
Yuzhi Yi, Rui Zhou, Fangfang Zhuang

и другие.

Journal of Physics and Chemistry of Solids, Год журнала: 2024, Номер 190, С. 112006 - 112006

Опубликована: Март 19, 2024

Язык: Английский

Процитировано

4

Tuning the mechanical characteristics of ZnO nanosheets via C, F, and P doping: A DFT approach DOI
P. Aghdasi, Sh Yousefi, R. Ansari

и другие.

Journal of Physics and Chemistry of Solids, Год журнала: 2024, Номер 191, С. 112036 - 112036

Опубликована: Апрель 9, 2024

Язык: Английский

Процитировано

4

Boosting photocatalytic performance in Cu doped ZnO nanocomposites : Investigation of Exciton-free carrier conversion and oxygen vacancy dynamics. DOI

Ze-Huan Zhang,

Hongjie Bai,

Xueyuan Bai

и другие.

Vacuum, Год журнала: 2024, Номер 226, С. 113241 - 113241

Опубликована: Май 10, 2024

Язык: Английский

Процитировано

4

Stable WSeTe/PtTe2 van der Waals heterojunction: Excellent mechanical, electronic, and optical properties and device applications DOI

ChangSong Zhao,

Zhanhai Li, Zhenhua Zhang

и другие.

Applied Surface Science, Год журнала: 2024, Номер 672, С. 160859 - 160859

Опубликована: Июль 29, 2024

Язык: Английский

Процитировано

4

van der Waals ZnO/HfSn2N4 Heterojunction with Exceptional Photoresponse for Photodetectors DOI
Yang Shen, Xiaoyu Zhao, Zhen Cui

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(43), С. 58802 - 58810

Опубликована: Окт. 21, 2024

Two-dimensional van der Waals heterojunctions represent a promising avenue for spectrum of optoelectronic endeavors. Nonetheless, their deployment has been somewhat constrained by the suboptimal efficiency photocurrent generated. In this article, ZnO/HfSn2N4 heterojunction is proposed to achieve high photoresponse efficiency. First-principles calculations are utilized confirm that possesses thermal stability with direct bandgap (1.36 eV). It exhibits light absorption coefficient and carrier mobility (2.51 × 103 cm2 V-1 s-1), biaxial strain significant effect on modulation band structure. As tensile increases, changes nonlinearly, transitioning from type-II type-I heterojunction. When compressive decreases. Quantum transport simulations employed calculate density states transmission model, verifying its excellent (a peak reaching 4.93 a02/photon an extinction ratio 75.1). shows potentially efficient photodetector.

Язык: Английский

Процитировано

4

First-principles study on MoSSe/ GaTe van der Waals heterostructures: A promising water-splitting photocatalyst DOI Creative Commons

Yongxin Guan,

Wen Lei, Mengyao Dong

и другие.

Results in Physics, Год журнала: 2024, Номер 58, С. 107520 - 107520

Опубликована: Фев. 27, 2024

Photocatalytic water splitting using semiconductor electrocatalysts in photoelectrochemical cells is an appealing approach to converting sunlight and into clean renewable hydrogen fuel. MoSSe/GaTe der Waals heterojunctions has recently been suggested as a promising photocatalyst for splitting. Depending on the stacking mode, two type have moderate band gaps of 1.081 eV 1.307 eV, significant visible absorption coefficients, band-edge positions spanning redox potential water. Bader charge differential density analyses show that GaTe layer loses electrons MoSSe monolayer gains electrons, resulting built-in electric field pointing from layer. Moreover, Gibbs free energy diagram indicates solar can effectively drive junction. The influence bi-axial strain pH value are discussed. Therefore, heterostructures applications photocatalytic decomposition.

Язык: Английский

Процитировано

3

First principles study on electronic, optical and catalytic properties of designed Zr-doped structures based on Hf2CO2 DOI
Shiquan Feng,

Jianling Zhao,

Yang Yang

и другие.

Journal of Molecular Structure, Год журнала: 2024, Номер 1308, С. 137991 - 137991

Опубликована: Март 7, 2024

Язык: Английский

Процитировано

3