The pulse Sn-assisted growth promotes the preparation of high-quality single-crystal ε-Ga2O3 films using MOCVD technology. DOI
Long Wang, Yao Wang, Qian Feng

и другие.

Ceramics International, Год журнала: 2024, Номер unknown

Опубликована: Ноя. 1, 2024

Язык: Английский

Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films DOI
F. Mattei,

Davide Vurro,

Donato Spoltore

и другие.

Materials Today Physics, Год журнала: 2025, Номер unknown, С. 101663 - 101663

Опубликована: Янв. 1, 2025

Язык: Английский

Процитировано

2
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3 DOI Creative Commons
Lewis T. Penman,

Zak M. Johnston,

P. R. Edwards

и другие.

physica status solidi (b), Год журнала: 2025, Номер unknown

Опубликована: Фев. 12, 2025

A systematic investigation of the optical properties β‐, α‐, and κ‐phase gallium oxide (Ga 2 O 3 ) polymorphs is conducted by UV–vis spectrophotometry through Swanepoel method temperature‐dependent photoluminescence. Using same approach apparatus allows similarities differences between these three phases to be directly established. Differences are observed, including refractive indices 1.89 (β), 2.00 (α), 1.85 (κ) bandgaps 4.99 eV 5.32 4.87 (κ). In luminescence studies, four emission peaks in each polymorph revealed, located at different energies UV (3.1–3.9 eV), blue (2.7–3.0 green (2.2–2.6 eV) regions, with causes attributed self‐trapped holes, donor–acceptor pair transitions involving Ga vacancies (V , V ), GaO divacancies + interstitials (O i H impurities – n H, o ). this study, unique highlighted it warned that commonly practiced analogy β‐Ga can lead misinterpretations.

Язык: Английский

Процитировано

2
Creation of Shallow Donor States in Hydrogen Plasma Exposed Undoped α-Ga2O3 DOI
Alexander Yu. Polyakov, В. И. Николаев, A.A. Vasil'ev

и другие.

Journal of Alloys and Compounds, Год журнала: 2025, Номер unknown, С. 180291 - 180291

Опубликована: Апрель 1, 2025

Язык: Английский

Процитировано

1
Huge photosensitivity gain combined with long photocurrent decay times in various polymorphs of Ga2O3: effects of carriers trapping with deep centers DOI
A. Y. Polyakov, E. B. Yakimov,

Ivan Shchemerov

и другие.

Journal of Physics D Applied Physics, Год журнала: 2024, Номер 58(6), С. 063002 - 063002

Опубликована: Ноя. 4, 2024

Abstract The material system of ultra-wide bandgap Ga 2 O 3 has already shown great promise in the field solar-blind photodetectors with high photoresponsivity, photoresponsivity gain and low dark current. These promising results have been achieved on films different polymorphs by methods, often not particularly crystalline quality. In fact, it would seem case that lower quality films, higher photosensitivity its gain. This, however, is most cases accompanied unusually long photocurrent build-up decay times. We show experimental can be explained models which related to effects holes being trapped deep states, which, Schottky diodes, a decrease barrier height consequent increase electron current, metal–semiconductor–metal (MSM) structures additionally gives rise usual due increased concentration lifetime electrons. present discuss describing MSM structures, unipolar bipolar heterojunctions, we propose possible candidates for role hole traps polymorphs. also existing times offer explanations observed temperature dependences characteristic where such data are present.

Язык: Английский

Процитировано

6
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes DOI Creative Commons

Andrea Asteriti,

G. Verzellesi, Giovanna Sozzi

и другие.

physica status solidi (b), Год журнала: 2025, Номер unknown

Опубликована: Фев. 4, 2025

The “photo‐gain effect” amplifying the DC photocurrent of κ‐Ga 2 O 3 UV‐C photoresistors is analyzed by means 2D numerical simulations and linked to capture photogenerated holes deep donor levels, probably associated with oxygen vacancies. resulting ionization donors leads an increase in electron density, hence enhanced conductivity under illumination.

Язык: Английский

Процитировано

0
Consistent reporting of performances in Ga2O3 UV-C photodetectors DOI Creative Commons
David G. Nicol, Farnaz Hadizadeh,

S. Douglas

и другие.

Опубликована: Апрель 10, 2025

The study addresses the lack of consistency with reporting Ga2O3 photodetector performances and assesses impact illumination intensity, wavelength, voltage bias on responsivity time response. approach reveals electronic processes at play during operation provides qualitative insights into defect spectroscopy materials. More importantly, highlights that high performance claims could be engineered through selective use testing conditions warns malpractices when performances, which result in misleading comparisons. Finally, makes recommendations for future works to enable normalization allowing fair comparisons across literature. These are not specific can applied other semiconductors.

Язык: Английский

Процитировано

0
Optimization of oxygen flow rate toward high-quality ε-Ga2O3 thin films grown on sapphire substrates and solar-blind ultraviolet photodetectors DOI
Mengfan Xu, Yang Li, Chenglong Li

и другие.

Optical Materials, Год журнала: 2025, Номер unknown, С. 117011 - 117011

Опубликована: Апрель 1, 2025

Язык: Английский

Процитировано

0
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection DOI Creative Commons
Abderrahim Moumen, Payam Rajabi Kalvani, F. Mattei

и другие.

Optical Materials, Год журнала: 2025, Номер unknown, С. 117125 - 117125

Опубликована: Май 1, 2025

Язык: Английский

Процитировано

0
The pulse Sn-assisted growth promotes the preparation of high-quality single-crystal ε-Ga2O3 films using MOCVD technology. DOI
Long Wang, Yao Wang, Qian Feng

и другие.

Ceramics International, Год журнала: 2024, Номер unknown

Опубликована: Ноя. 1, 2024

Язык: Английский

Процитировано

0