Advancing Thermal Management Technology for Power Semiconductors through Materials and Interface Engineering DOI Creative Commons
Man Li,

Suixuan Li,

Zhihan Zhang

и другие.

Accounts of Materials Research, Год журнала: 2025, Номер unknown

Опубликована: Апрель 8, 2025

Power semiconductors and chips are essential in modern electronics, driving applications from personal devices data centers to energy technologies, vehicles, Internet infrastructure. However, efficient heat dissipation remains a critical challenge, directly affecting their performance, reliability, lifespan. High-power electronics based on wide- ultrawide-bandgap can exhibit power densities exceeding 10 kW/cm2, hundreds of times higher than digital posing significant thermal management challenges. Addressing this issue requires advanced materials interface engineering, alongside comprehensive understanding physics, chemistry, transport dynamics, various electronic, thermal, mechanical properties. Despite progress solutions, the complex interplay phonons, electrons, interactions with material lattices, defects, boundaries, interfaces presents persistent This Account highlights key advancements for chips, focus our group's recent contributions. Our approach addresses several issues: (1) developing ultrahigh conductivity enhanced dissipation, (2) reducing boundary resistance between emerging 2D materials, (3) improving contacts sinks, (4) innovating dynamic (5) exploring novel principles design future technologies. research philosophy integrates multiscale theoretical predictions experimental validation achieve paradigm shift management. By leveraging first-principles calculations, studies redefined traditional criteria high-thermal-conductivity materials. Guided by these insights, we developed boron arsenide phosphide, which record-high conductivities up 1300 W/mK. Through phonon band structure reduced TBR GaN/BAs over 8-fold compared GaN/diamond interfaces. The combination low high significantly hotspot temperatures, setting new benchmarks electronics. We further explored anisotropic properties two-dimensional Moiré patterns twisted graphene, expanding landscape. To address challenges at device-heat sink interfaces, self-assembled composites 21 W/mK exceptional compliance (∼100 kPa). These provide promising solutions flexible soft robotics. In management, pioneered concept solid-state transistors, enabling electrically controlled flow unparalleled tunability, speed, compatibility integrated circuit fabrication. innovations not only enhance performance but also enable exploration fundamental under extreme conditions. Looking forward, reflect remaining identify opportunities advancements. include scaling production high-performance integrating existing manufacturing processes, uncovering physics inspire next-generation addressing challenges, aim codesign strategies that development more efficient, reliable, sustainable, electronic systems.

Язык: Английский

Advancing Thermal Management Technology for Power Semiconductors through Materials and Interface Engineering DOI Creative Commons
Man Li,

Suixuan Li,

Zhihan Zhang

и другие.

Accounts of Materials Research, Год журнала: 2025, Номер unknown

Опубликована: Апрель 8, 2025

Power semiconductors and chips are essential in modern electronics, driving applications from personal devices data centers to energy technologies, vehicles, Internet infrastructure. However, efficient heat dissipation remains a critical challenge, directly affecting their performance, reliability, lifespan. High-power electronics based on wide- ultrawide-bandgap can exhibit power densities exceeding 10 kW/cm2, hundreds of times higher than digital posing significant thermal management challenges. Addressing this issue requires advanced materials interface engineering, alongside comprehensive understanding physics, chemistry, transport dynamics, various electronic, thermal, mechanical properties. Despite progress solutions, the complex interplay phonons, electrons, interactions with material lattices, defects, boundaries, interfaces presents persistent This Account highlights key advancements for chips, focus our group's recent contributions. Our approach addresses several issues: (1) developing ultrahigh conductivity enhanced dissipation, (2) reducing boundary resistance between emerging 2D materials, (3) improving contacts sinks, (4) innovating dynamic (5) exploring novel principles design future technologies. research philosophy integrates multiscale theoretical predictions experimental validation achieve paradigm shift management. By leveraging first-principles calculations, studies redefined traditional criteria high-thermal-conductivity materials. Guided by these insights, we developed boron arsenide phosphide, which record-high conductivities up 1300 W/mK. Through phonon band structure reduced TBR GaN/BAs over 8-fold compared GaN/diamond interfaces. The combination low high significantly hotspot temperatures, setting new benchmarks electronics. We further explored anisotropic properties two-dimensional Moiré patterns twisted graphene, expanding landscape. To address challenges at device-heat sink interfaces, self-assembled composites 21 W/mK exceptional compliance (∼100 kPa). These provide promising solutions flexible soft robotics. In management, pioneered concept solid-state transistors, enabling electrically controlled flow unparalleled tunability, speed, compatibility integrated circuit fabrication. innovations not only enhance performance but also enable exploration fundamental under extreme conditions. Looking forward, reflect remaining identify opportunities advancements. include scaling production high-performance integrating existing manufacturing processes, uncovering physics inspire next-generation addressing challenges, aim codesign strategies that development more efficient, reliable, sustainable, electronic systems.

Язык: Английский

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