Enhancing the Performance of Broadband Sb2Se3/Ga2O3 Self-Powered Photodetectors via Modulation of Ga2O3 Surface States and Their Application in All-Day Corona Detection DOI
Xiangwei He, Jianping Xu, Shaobo Shi

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Июнь 5, 2025

The technology for photodetection and localization of corona discharge typically necessitates the integration various photodetectors (PDs) with different photoresponse bands relies on external power supplies. A self-powered PD was fabricated utilizing Sb2Se3/Ga2O3 heterojunction, exhibiting a broadband from solar-blind ultraviolet (SBUV) to visible (Vis) near-infrared (NIR) bands. surface states Ga2O3 nanorod array (NR) films were modulated by treatment hydrogen peroxide (H2O2) solution periods time suppress interface recombination photogenerated carriers in type-I heterojunctions. H2O2 resulted increased hydroxyl groups (-OH) decreased oxygen vacancies NRs. -OH can facilitate molecule (O2) adsorption NRs form O2- consume holes reduce carriers. However, decrease will cause decline concentration electrons hinder carrier transport. Ultimately, optimized Al/Sb2Se3/Ga2O3/FTO PD, subjected 4 min, demonstrated responsivities 3.3, 130, 180 mA/W under 254, 525, 850 nm light illumination without applying bias voltage, respectively. utilization desorption processes regulate at is an effective strategy improving performance I-type heterojunction PDs. An approach conceptually proposed all-day real-time monitoring high-voltage transmission lines characteristic SBUV applied capture signals generated discharge. Vis NIR employed provide background information both strong conditions during daytime weak nighttime. results low miniaturized digitalization Power Internet Things (IoT) enable lines.

Язык: Английский

Improving the Operational Stability of the Sb2Se3-Based Self-Powered Photodetector via Interfacial Engineering DOI
Jianpeng Li, Wei Cheng, Zixiu Cao

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Май 24, 2025

Originating from photovoltaic devices, self-powered photodetectors (SPPDs) have low power consumption and show promising applications in photoelectric imaging optical communications. Many efforts been devoted to improving their photodetection performances, including responsivity, detectivity, response time. However, work on operational stability, one of the key parameters applied PDs, is still rare. Here, using an interfacial engineering method, we improve stability representative Sb2Se3-based SPPD. The Sb2O3 modification layer at interface between Sb2Se3 TiO2 layers characterized systematically. With optimized fabrication layer, under both air ambient underwater conditions significantly enhanced. Moreover, performances SPPD, time, are improved 0.45 A/W, 2.70 × 1013 Jones, 81.5/75.0 ns, respectively. Specifically, without encapsulation, photoresponse devices vary by only around ten percent after working underwater. Our provides a facile effective way modify properties heterostructure

Язык: Английский

Процитировано

0

Low-power optoelectronic synaptic devices with ZnMgO in deep-ultraviolet encryption computation DOI

Jingyang Li,

Kai Chen,

Chao Wu

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(22)

Опубликована: Июнь 2, 2025

The realization of vision-based neuromorphic computing relies significantly on advancements in optoelectronic synaptic chip technology. Currently, the development devices is mainly limited by high power consumption due to bias voltage and low recognition rates caused background noise. A low-power deep-ultraviolet synapse device developed doping Mg into zinc oxide modulate oxygen-vacancy defects. Specifically, behavior still has excellent persistent photoconductivity response at 12 mV bias, single energy 2.34 pJ. Meanwhile, artificial neural network constructed according excitation inhibition characteristics, rate handwritten digits as 95.41%. In addition, basis demonstrating ultraviolet image visual learning memory, provides an encryption algorithm verification array integrating sensing storage with 20 nJ. This strong anti-interference supports high-performance neural-state computing.

Язык: Английский

Процитировано

0

Enhancing the Performance of Broadband Sb2Se3/Ga2O3 Self-Powered Photodetectors via Modulation of Ga2O3 Surface States and Their Application in All-Day Corona Detection DOI
Xiangwei He, Jianping Xu, Shaobo Shi

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Июнь 5, 2025

The technology for photodetection and localization of corona discharge typically necessitates the integration various photodetectors (PDs) with different photoresponse bands relies on external power supplies. A self-powered PD was fabricated utilizing Sb2Se3/Ga2O3 heterojunction, exhibiting a broadband from solar-blind ultraviolet (SBUV) to visible (Vis) near-infrared (NIR) bands. surface states Ga2O3 nanorod array (NR) films were modulated by treatment hydrogen peroxide (H2O2) solution periods time suppress interface recombination photogenerated carriers in type-I heterojunctions. H2O2 resulted increased hydroxyl groups (-OH) decreased oxygen vacancies NRs. -OH can facilitate molecule (O2) adsorption NRs form O2- consume holes reduce carriers. However, decrease will cause decline concentration electrons hinder carrier transport. Ultimately, optimized Al/Sb2Se3/Ga2O3/FTO PD, subjected 4 min, demonstrated responsivities 3.3, 130, 180 mA/W under 254, 525, 850 nm light illumination without applying bias voltage, respectively. utilization desorption processes regulate at is an effective strategy improving performance I-type heterojunction PDs. An approach conceptually proposed all-day real-time monitoring high-voltage transmission lines characteristic SBUV applied capture signals generated discharge. Vis NIR employed provide background information both strong conditions during daytime weak nighttime. results low miniaturized digitalization Power Internet Things (IoT) enable lines.

Язык: Английский

Процитировано

0