Characterizing the contact evolution through the combination of surface roughness parameters in chemical mechanical polishing using a polyurethane polishing pad

Wear, Год журнала: 2025, Номер unknown, С. 205802 - 205802

Опубликована: Янв. 1, 2025

Язык: Английский

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Unprecedented developed composite polishing system to achieve atomic surface integrating rough and fine polishing using a novel hyper-conjugated pad through controlling the temperature of a proposed green slurry

Advanced Composites and Hybrid Materials, Год журнала: 2025, Номер 8(3)

Опубликована: Апрель 23, 2025

Язык: Английский

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Research on Deflection and Stress Analyses and the Improvement of the Removal Uniformity of Silicon in a Single-Sided Polishing Machine Under Pressure

Micromachines, Год журнала: 2025, Номер 16(2), С. 198 - 198

Опубликована: Фев. 8, 2025

The chemical-mechanical polishing (CMP) of silicon wafers involves high-precision surface machining after double-sided lapping. Silicon are subjected to chemical corrosion and mechanical removal under pressurized conditions. multichip CMP process for 4~6-inch wafers, such as those in MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated-Gate Bipolar MEMS (Micro-Electromechanical System) field materials, is conducted maintain multiple chips improve efficiency polish uniformity; that is, the detected TTV (total thickness variation) gradually increases from 10 μm less than 3 μm. In this work, first, a mathematical model calculating small deflection pressure established, limit values two boundary conditions fixed support simple calculated. Moreover, uniformity improved by improving wax-coated adhesion state adjusting reflect state. Then, stress distribution simulated, calculation methods measuring measurement index described. Stress changed changing size ring achieve purpose removing uniformity. This study provides reference wafer polishing.

Язык: Английский

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Close atomic surface on aluminum alloy using green chemical mechanical polishing with synergistic effect between yttria and silica abrasives

Applied Surface Science, Год журнала: 2024, Номер unknown, С. 161586 - 161586

Опубликована: Окт. 1, 2024

Язык: Английский

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Molecular dynamics simulations in semiconductor material processing: A comprehensive review

Measurement, Год журнала: 2024, Номер unknown, С. 115708 - 115708

Опубликована: Сен. 1, 2024

Язык: Английский

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Study of the impact of flake Al2O3 abrasive and N-n-Butylimidazole in backside CMP (Chemical Mechanical Polishing) of TSV (Through Silicon Via) wafers

Surfaces and Interfaces, Год журнала: 2024, Номер unknown, С. 105626 - 105626

Опубликована: Дек. 1, 2024

Язык: Английский

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Precision and ultra-precision machining with elastic polishing tools: a review

Surface Science and Technology, Год журнала: 2025, Номер 3(1)

Опубликована: Март 13, 2025

Язык: Английский

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Total resource circulation in chemical mechanical polishing wastewater treatment from semiconductor manufacturing industry: A review

Journal of Water Process Engineering, Год журнала: 2025, Номер 72, С. 107619 - 107619

Опубликована: Апрель 1, 2025

Язык: Английский

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Research on the Trajectory and Relative Speed of a Single-Sided Chemical Mechanical Polishing Machine

Micromachines, Год журнала: 2025, Номер 16(4), С. 450 - 450

Опубликована: Апрель 10, 2025

This study establishes a bidirectional kinematic analysis framework for single-sided chemical mechanical polishing systems through innovative coordinate transformation synergies (rotational and translational). To address three critical gaps in existing research, interaction dynamics both pad–wafer abrasive–wafer interfaces are systematically derived via 5-inch silicon wafers. Key advancements include (1) the development of closed-form trajectory equations resolving multibody tribological interactions, (2) vector-based relative velocity quantification with 17 × grid 3D visualization, (3) first-principle parametric mapping nonuniformity (NUV = 0–0.42) across 0–80 rpm operational regimes. Numerical simulations reveal two fundamental regimes: near-unity rotational speed ratios (ωP/ωC [0.95, 1) (1, 1.05]) generate optimal spiral trajectories that achieve 95% surface coverage, whereas integer multiples produce stable velocities (1.75 m/s at 60 rpm). Experimental validation demonstrated 0.3 μm/min removal rates <1 μm under optimized conditions, which was attributable to stabilization effects. The methodology exhibits inherent extensibility high-speed operations (>80 rpm) alternative configurations adaptability. work provides systematic derivation protocol abrasive analysis, visualization paradigm optimization, quantitative guidelines precision process control—advancing beyond current empirical approaches finishing technology.

Язык: Английский

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Internal defect depths prediction technique by combining light-scattering imaging and machine learning

Materials Science in Semiconductor Processing, Год журнала: 2025, Номер 194, С. 109587 - 109587

Опубликована: Апрель 22, 2025

Язык: Английский

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