IOSR Journal of Applied Physics,
Год журнала:
2025,
Номер
17(1)
Опубликована: Янв. 1, 2025
The
Schottky
barrier
diode
formed
from
FTO
substrate
and
ZnO
semiconductor
has
the
potential
to
be
used
as
a
conventional
radiology
X-ray
detector.The
addition
of
magnesium
dopant
been
proven
enhance
detector's
performance
in
mid-range
energy
X-ray.The
improvement
is
also
supported
by
UV-Vis
spectroscopy
results,
which
show
an
increase
band
gap
0.04
eV.With
firing
voltage
0.17
V,
detector
becomes
more
responsive,
stability
current
response
observed.
Electronic Materials,
Год журнала:
2025,
Номер
6(1), С. 3 - 3
Опубликована: Фев. 20, 2025
This
research
is
on
the
structural,
optical,
and
electrical
properties
of
SnO2
ZnO
thin
films,
which
are
increasingly
used
in
many
electronic
devices,
including
gas
sensors,
light-emitting
diodes,
solar
cells.
For
various
applications,
it
essential
to
accurately
determine
band
gap
energy,
as
controls
optical
behavior
material.
However,
there
no
single
method
for
its
determination;
rather,
different
approximations
depend
crystalline
quality
doping
level
because
these
modify
energy
structure
semiconductor.
With
aim
analyzing
approaches,
films
were
prepared
by
sputtering
unheated
glass
substrates
subsequently
annealed
N2
at
temperatures
between
250
°C
450
°C.
These
samples
showed
crystallite
sizes,
absorption
coefficients,
free
carrier
concentrations
depending
material
annealing
temperature.
Analysis
results
shows
that
expression
developed
amorphous
materials
underestimates
value,
so-called
unified
tends
overestimate
it,
while
equations
perfect
or
heavily
doped
crystals
give
energies
more
consistent
with
level,
regardless
films.
