Advanced Functional Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Дек. 23, 2024
Abstract
As
the
demand
for
cleaner
energy
becomes
a
paramount
objective
of
sustainable
development,
advancement
cutting‐edge
engineered
materials
wide
range
applications
increasingly
vital.
Tailoring
catalyst
properties
through
precise
design
and
electronic
state
tuning
is
essential
adapting
these
to
large‐scale
applications.
Given
this,
an
effective
fine‐tuning
(EFT)
strategy
presented
optimize
structures
single‐atom
Zn
site
Ru
species,
synergistically
enhancing
both
electrocatalytic
oxygen
reduction
reaction
(ORR)
hydrogen
evolution
(HER).
Benefiting
from
interaction
between
species
anchored
on
hierarchically
layered
nanosheets
isolated
atoms
(Ru@Zn‐SAs/N‐C),
exhibits
superior
ORR
HER
activities
compared
benchmark
Pt/C
catalyst.
X‐ray
absorption
spectroscopy
density
functional
theory
(DFT)
calculations
confirm
novel
EFT
effect
single
that
enables
Ru@Zn‐SAs/N‐C
approaches
optimal
scaling
relation
*
OOH
OH,
breaking
universal
limitation.
Additionally,
G
H*
value
positions
near
apex
theoretical
volcano
model.
This
work
provides
innovative
avenue
regulating
localization
catalytic
active
centers
by
virtue
carbon
substrate
offers
valuable
insights
designing
high‐efficiency
electrocatalysts.
Electrocatalysts
for
oxidation
and
reduction
reactions
are
crucial
sustainable
energy
production
carbon
reduction.
While
precious
metal
catalysts
exhibit
superior
activity,
reducing
reliance
on
them
is
necessary
large‐scale
applications.
To
address
this,
transition
metal‐based
studied
with
strategies
to
enhance
catalytic
performance.
One
promising
strategy
heterostructures,
which
integrate
multiple
materials
harness
synergistic
effects.
Developing
efficient
heterostructured
electrocatalysts
requires
understanding
their
intricate
characteristics,
poses
challenges.
in
situ
operando
spectroscopy
provides
insights,
computational
science
essential
capturing
reaction
mechanisms,
analyzing
the
origins
at
atomic
scale,
efficiently
exploring
innovative
heterostructures.
Despite
growing
recognition
of
science,
standardized
criteria
these
systems
remain
lacking.
This
review
consolidates
case
studies
propose
approaches
modeling
It
categorizes
heterostructure
types
into
vertical,
semivertical,
lateral,
defines
insights
minimizing
or
exploiting
strain
effects
from
lattice
mismatches.
Furthermore,
it
summarizes
analyses
stability
activity
across
reactions,
including
oxygen
evolution,
hydrogen
reduction,
dioxide
nitrogen
urea
oxidation.
an
overview
refine
designs
establish
a
framework
systematic
analysis
develop
electrocatalysts.
Advanced Functional Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Апрель 15, 2025
Abstract
Metal‐sulfur
batteries
(MSBs)
are
emerging
energy
storage
candidates
due
to
their
high
density,
cost‐effective
nature,
and
environmental
compatibility.
However,
polysulfide
shuttling,
slow
kinetics,
dendritic
issues
severely
plague
nexus
stage
from
academic
commercial
applications.
Inspired
by
the
low
cost
higher
capacity
of
metal
sulfur
batteries,
numerous
strategies,
electrode
design
separator
modification,
developed
eliminate
these
challenges
on
practical
grounds.
Among
them,
functionalizing
separators
hold
great
promise
stabilize
battery
operation
mechanistically
in
terms
safety,
stability,
electrochemical
benchmarks,
as
existing
polyolefin
designs
cannot
fully
satisfy
complex
chemistry
polysulfides.
This
review
first
discusses
critical
with
associated
mechanistic
approaches
better
describe
requirement
for
material
manipulation
design.
Furthermore,
role
modulated
functional
materials
is
critically
highlighted
screened
synergistically
achieve
an
advanced
recent
four‐year
plethora
separators.
Finally,
future
directions
outlined
research.
will
offer
a
comprehensive
reference
new
paths
designing
modulating
advancing
high‐energy‐density
systems.
Advanced Electronic Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Апрель 23, 2025
Abstract
This
study
investigates
the
electrical
properties
of
SnO
2
/SnS
heterojunction
as
interlayer
for
resistive
random
access
memory
(RRAM).
In
this
work,
(NH
4
)
Sn
S
6
is
used
a
source
production
heterojunction.
The
results
indicate
that
annealing
temperature
increases,
composition
SnS
based
thin
film
changes
while
cycle‐to‐cycle
stability
device
improved.
examined
by
X‐ray
photoelectron
spectroscopy
(XPS),
scanning
electronic
microscopy
(SEM)
and
atomic
force
(AFM),
which
proves
formation
Devices
with
exhibited
lower
operating
voltages
more
uniform
switching
behavior.
RRAM
can
be
repeatedly
consistently
switched
between
high‐resistance
state
low‐resistance
over
1000
cycles,
long
data
retention
time
>
×
10
s
at
room
temperature.
Meanwhile,
explores
relationship
type
neuromorphic
simulation
human
brain.
224
PJ
set
power
0.4
V
pulse
shows
excellent
characteristics.
provides
vital
reference
high‐performance
long‐lifespan
devices.
