Effects of Molecular Structure Design on the Thermal, Mechanical, and Dielectric Properties of Polyarylene Ether Nitrile for Low‐Dielectric Applications DOI

Jin‐Qi Wu,

Yani Chen, Ting Zhang

и другие.

Journal of Applied Polymer Science, Год журнала: 2025, Номер unknown

Опубликована: Апрель 12, 2025

ABSTRACT With the advent of 5G communication era, low‐dielectric materials have become essential for efficient signal transmission, making development polymer with constants a critical research focus. Polyarylene ether nitrile (PEN), high‐performance material, exhibits exceptional mechanical properties, thermal stability, chemical resistance, etc. In this study, five different structured PENs were synthesized by molecular structure design structural bisphenols and benzonitrile, effects changes on thermal, mechanical, dielectric properties PEN films studied in detail. The results show that bisphenol AP‐based (BPAP‐PEN) has good (tensile strength 70.15 MPa), high stability ( T 5% = 510°C), constant k 3.16 at 1 MHz), loss (0.008 MHz). This approach offers novel pathway properties.

Язык: Английский

Effects of Molecular Structure Design on the Thermal, Mechanical, and Dielectric Properties of Polyarylene Ether Nitrile for Low‐Dielectric Applications DOI

Jin‐Qi Wu,

Yani Chen, Ting Zhang

и другие.

Journal of Applied Polymer Science, Год журнала: 2025, Номер unknown

Опубликована: Апрель 12, 2025

ABSTRACT With the advent of 5G communication era, low‐dielectric materials have become essential for efficient signal transmission, making development polymer with constants a critical research focus. Polyarylene ether nitrile (PEN), high‐performance material, exhibits exceptional mechanical properties, thermal stability, chemical resistance, etc. In this study, five different structured PENs were synthesized by molecular structure design structural bisphenols and benzonitrile, effects changes on thermal, mechanical, dielectric properties PEN films studied in detail. The results show that bisphenol AP‐based (BPAP‐PEN) has good (tensile strength 70.15 MPa), high stability ( T 5% = 510°C), constant k 3.16 at 1 MHz), loss (0.008 MHz). This approach offers novel pathway properties.

Язык: Английский

Процитировано

0