Improvement of Material Removal Rate and Within Wafer Non-Uniformity in Chemical Mechanical Polishing Using Computational Fluid Dynamic Modeling

Journal of Manufacturing and Materials Processing, Год журнала: 2025, Номер 9(3), С. 95 - 95

Опубликована: Март 14, 2025

Chemical mechanical polishing (CMP) is a widely used technique in semiconductor manufacturing to achieve flat and smooth surface on silicon wafers. A key challenge CMP enhancing the material removal rate (MRR) while reducing within-wafer non-uniformity (WIWNU). computational fluid dynamics (CFD) model employed analyze slurry flow between wafer pad. Several factors influence process, including type of abrasives, rate, pad patterns, contact pressure distribution. In this study, two patterns with concentric radial grooves are proposed address how morphology variations consistency. Under same operating conditions, CFD simulations show that (i) have higher wall shear stress, more significant negative region, evenly distributed mass than grooves, (ii) exhibit superior It noted differential field area results less pronounced back-mixing effect. comparison reveals improve distribution, reduce saturation time (SST), increase leading MRR improved (NU). Precisely, errors experimental SST values 21.52 s 16.06 for circular groove pads, respectively, simulated 22.23 15.73 minimal, at 3.33% 3.35%.

Язык: Английский

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Material Removal Factors for Ultrasonic Magnetorheological Chemical Compound Polishing of Gan Wafers

Опубликована: Янв. 1, 2025

In this work, a multifield synergistic material removal model is established to study the behaviour by ultrasonic magnetorheological chemical compound polishing (UMCP) of gallium nitride wafers, and processing under different solution compositions conditions used examine effects ultrasonic, mechanical on rate. The results show that dominates during UMCP, enhancement slightly greater than action, interaction between range factors promotes better GaN materials. abrasive composition significantly enhances effect, higher concentration correlates stronger effect. hydrogen peroxide has superior effect reaction, too high or low weakens action

Язык: Английский

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Controllable synthesis of core-shell SiO2@CeO2 composite abrasives for chemical mechanical polishing of EMC-Si-Cu multi-heterointerfaces

Materials Chemistry and Physics, Год журнала: 2025, Номер unknown, С. 130509 - 130509

Опубликована: Фев. 1, 2025

Язык: Английский

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Preparation of CeO₂ Polishing Powder and Its Performance and Mechanism for Chemical Mechanical Polishing of Optical Glass

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Март 18, 2025

CeO2 polishing powder is extensively used in chemical mechanical (CMP) applications on Si substrate materials. This study synthesized sub-micrometer, spherical, fluoride-free, and fluorine-doped particles using the precipitation method at various calcination temperatures. Key parameters of particles, such as particle size, morphology, crystallinity, Ce3+ content, were obtained a laser size analyzer (LPSA), scanning electron microscopy (SEM), X-ray diffraction (XRD), photoelectron spectroscopy (XPS). In conjunction with CMP experiments K9 optical glass, service life performance evaluated. It was determined that crystallinity most critical factor, particularly pronounced role (111) crystal plane. Fluorine can enhance promote grain growth; hence, fluorine doping improve relatively low temperatures (600 °C), reducing energy consumption. Additionally, appropriate rough surface hydrophilicity also contribute to enhancement material removal rate (MRR). Fourier transform infrared (FT-IR) confirmed Ce-O-Si bonding during process facilitated disintegration glass. XPS verified some Ce4+ be reduced process, presence strengthen bonding. Ultimately, glass primarily removed lumped Q3 (Si2O52- sheet) form through formation bonds CeO2-glass interface. further refines mechanism succinctly summarized TOC graphic.

Язык: Английский

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Effect of a novel alginate/5-aminovaleric acid slurry with CeO2/MoS2 abrasives on surface roughness and material removal rate of quartz glass

Applied Surface Science, Год журнала: 2025, Номер unknown, С. 163096 - 163096

Опубликована: Март 1, 2025

Язык: Английский

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Low-damage grinding process of gallium oxide based on cerium oxide

Materials Science in Semiconductor Processing, Год журнала: 2025, Номер 194, С. 109544 - 109544

Опубликована: Апрель 8, 2025

Язык: Английский

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Research on ultra-smooth surface processing of mid-infrared indium fluoride-based fiber glass

Journal of Alloys and Compounds, Год журнала: 2025, Номер 1027, С. 180590 - 180590

Опубликована: Апрель 23, 2025

Язык: Английский

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Challenges and Development Trends of Advanced Finishing Technologies

Springer tracts in mechanical engineering, Год журнала: 2025, Номер unknown, С. 481 - 502

Опубликована: Янв. 1, 2025

Язык: Английский

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The effect of amino acid addition in CeO2-based slurry on SiO2/Si3N4 CMP: Removal rate selectivity, morphology, and mechanism research

Journal of Molecular Liquids, Год журнала: 2024, Номер 412, С. 125855 - 125855

Опубликована: Авг. 25, 2024

Язык: Английский

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Nanocasting synthesis of mesoporous CeO2 particle abrasives from mesoporous SiO2 hard templates for enhanced chemical mechanical polishing performance

Ceramics International, Год журнала: 2024, Номер unknown

Опубликована: Окт. 1, 2024

Язык: Английский

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