Polarization-Sensitive Solar-Blind Ultraviolet Photodetectors Based on Semipolar (112̅2) AlGaN Film
Yaqi Gao,
Yali Yu,
Jiankun Yang
и другие.
ACS Applied Materials & Interfaces,
Год журнала:
2025,
Номер
unknown
Опубликована: Янв. 31, 2025
Wide
bandgap
semiconductor
AlGaN
alloys
have
been
identified
as
key
materials
to
fabricate
solar-blind
ultraviolet
photodetectors
(SBUV
PDs).
Herein,
a
self-driven
SBUV
polarization-sensitive
PD
(PSPD)
based
on
semipolar
(112̅2)-oriented
films
is
reported.
Using
the
flow-rate
modulation
epitaxy
method,
full
widths
at
half
maximum
(FWHMs)
for
obtained
(112̅2)
along
[112̅3̅]
and
[11̅00]
rocking
curves
are
0.205°
0.262°,
respectively,
representing
best
results
heteroepitaxial
so
far.
Density
functional
theory
calculations
experimental
reveal
that
possesses
in-plane
anisotropy.
The
PSPDs
exhibit
strong
photoresponse
with
polarization
ratio
of
1.54
266
nm
rapid
response
450/450
ms
compared
other
low-dimensional
materials.
More
interestingly,
we
observe
positive
negative
behaviors
under
UV
light
illumination
due
surface
states
charge
transfer.
Our
may
enable
potential
applications
in
multifunctional
optoelectronic
devices.
Язык: Английский
Preparation and application of two-dimensional gallium nitride - A short review
Materials Science in Semiconductor Processing,
Год журнала:
2025,
Номер
193, С. 109512 - 109512
Опубликована: Апрель 2, 2025
Язык: Английский
Highly oriented and wafer-scale exfoliation of h-BN grown on AlN by metalorganic chemical vapor deposition
Applied Physics Letters,
Год журнала:
2025,
Номер
126(13)
Опубликована: Апрель 1, 2025
Hexagonal
boron
nitride
(h-BN)
and
aluminum
(AlN)
are
highly
suitable
for
the
development
of
flexible
nitride-based
ultraviolet
devices.
However,
there
limited
reports
on
integration
high-quality
h-BN
within
III-nitride
systems.
We
have
fabricated
thickness-controllable
a
step-flow
AlN
template
using
two-step
growth
method
through
metalorganic
chemical
vapor
deposition
(MOCVD).
Due
to
formation
etched
defects
during
one-step
growth,
grown
at
1460
°C
presents
disordered
layer
near
defect
region,
adversely
impacting
subsequent
uniformity
h-BN.
In
contrast,
by
process
exhibits
well-defined
layered
alignment
parallel
interface,
with
strong
x-ray
diffraction
peaks
26.7°
narrow
Raman
E2g
peak,
due
reducing
epitaxial
interface.
Finally,
well-ordered
is
achieved
wafer-scale
mechanical
exfoliation
epilayer
has
been
realized
clean
surface.
This
work
significance
substrate
thermal
stability
MOCVD
highlights
great
potential
in
fabrication
Язык: Английский
III-nitride-based monolithic integration: From electronics to photonics
Applied Physics Reviews,
Год журнала:
2025,
Номер
12(2)
Опубликована: Апрель 1, 2025
Over
the
past
two
decades,
successful
growth
of
high-quality
wide-bandgap
III-nitrides
has
made
realization
a
broad
range
new
device
applications,
including
optoelectronic
and
microelectronic
fields.
Through
monolithic
integration
photonic
electronic
devices
simultaneously,
different
functional
modules
can
be
integrated
on
same
wafer,
eliminating
parasitic
effects
caused
by
redundant
external
components,
enhancing
system
robustness
saving
chip
area.
The
scalable
circuits
have
great
potential
for
hybrid
integration.
This
paper
reviews
latest
research
progress
in
III-nitride
optoelectronics
microelectronics
recent
years,
especially
gallium
nitride-based
light
emitting
diodes,
laser
high-electron-mobility
transistors.
We
further
analyze
development
status
challenges
power
from
perspectives
process
fabrication
structure.
applications
systems
are
presented
detail,
sensing
on-chip
optical
communication.
Finally,
we
summarize
current
state
development,
opportunities,
integration,
providing
insights
into
advancement
semiconductors
post-Moore's
law
era.
Язык: Английский