Implementation and Comprehensive Investigation of Gate Engineered Si0.1Ge0.9/GaAs Charged Plasma Based JLTFET for Improved Analog/ RF Performance DOI Creative Commons

Pranita Soni,

Aditya Jain, Kaushal Kumar

и другие.

Results in Engineering, Год журнала: 2025, Номер unknown, С. 104069 - 104069

Опубликована: Янв. 1, 2025

Язык: Английский

Implementation and Comprehensive Investigation of Gate Engineered Si0.1Ge0.9/GaAs Charged Plasma Based JLTFET for Improved Analog/ RF Performance DOI Creative Commons

Pranita Soni,

Aditya Jain, Kaushal Kumar

и другие.

Results in Engineering, Год журнала: 2025, Номер unknown, С. 104069 - 104069

Опубликована: Янв. 1, 2025

Язык: Английский

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