Ceramics International, Год журнала: 2024, Номер unknown
Опубликована: Дек. 1, 2024
Язык: Английский
ACS Applied Bio Materials, Год журнала: 2024, Номер 7(5), С. 3483 - 3495
Опубликована: Апрель 30, 2024
The two-dimensional (2D) WSe
Язык: Английский
Процитировано
19
Energy & Fuels, Год журнала: 2024, Номер 38(16), С. 15681 - 15690
Опубликована: Авг. 7, 2024
Metal halide perovskites show promise for lighting applications, but their multiexcitonic emission processes are not fully understood. This study delves into the in metal to enhance our understanding of optical properties and potential technologies. Specifically, this focuses on Bi3+ doped Cs2ZrCl6 lead-free perovskite crystals, showcasing optoelectronic applications. The crystals were synthesized using a solvothermal method with varying concentrations. X-ray diffraction (XRD) analysis showed structural parameters perovskite. material had truncated octahedron morphology, as confirmed by scanning electron microscopy (SEM). Optical studies revealed UV absorption decrease band gap energy 2.6 eV 10% doping, indicating integration ions lattice. displayed dual luminescence from host self-trapped excitons (STEs) dopant-induced STEs. doping led blue triplet STEs, demonstrating tunability dopant concentration. Both pristine emitted light at 254 nm, which is attributed 1S0 → 3P1, while only 365 nm. presence multiple excitonic peaks photoluminescence excitation spectra, resulting 450 intensity was directly related concentration when excited 350 broad band, substantial Stokes shift 195 STEs induced strong electron–phonon coupling. Additionally, nm crystal suggests another transition (3P1 1S0) 257 Our results offer insights emissive mechanism ion nS2 suggest ways efficiency future
Язык: Английский
Процитировано
8
ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(42), С. 57277 - 57289
Опубликована: Окт. 9, 2024
The two-dimensional (2D) chalcogenide WSe
Язык: Английский
Процитировано
3
Ceramics International, Год журнала: 2025, Номер unknown
Опубликована: Янв. 1, 2025
Язык: Английский
Процитировано
0
Journal of Materials Science Materials in Electronics, Год журнала: 2025, Номер 36(6)
Опубликована: Фев. 1, 2025
Язык: Английский
Процитировано
0
Optical Materials, Год журнала: 2025, Номер unknown, С. 116848 - 116848
Опубликована: Фев. 1, 2025
Язык: Английский
Процитировано
0
ChemistrySelect, Год журнала: 2025, Номер 10(10)
Опубликована: Март 1, 2025
Abstract This study investigates cinnabar (HgS) as a material for self‐powered electrochemical photodetection, addressing the challenges of high‐power consumption and inefficient charge transfer in conventional photodetectors. Current photodetector technologies often rely on external biasing, which limits their energy efficiency applicability remote sensing. In contrast, this work demonstrates that cinnabar‐based devices exhibit functionality, eliminating need power sources. Characterization techniques, such X‐ray diffraction optical response measurements reveal high crystallinity, hexagonal crystal structure, UV–visible absorption with 2 eV band gap making strong light‐harvesting material. Photoluminescence analysis shows near‐white light emission, enhancing its potential Thermogravimetric highlights phase transitions from α HgS to β HgS, indicating thermal stability crucial long‐term device performance. Electrochemical tests including cyclic voltammetry, confirm efficient is essential photodetection. Notably, photodetectors operation optimal photocurrent at 0 V bias, demonstrating rapid response, responsivity, enhanced stability. These results position promising energy‐efficient, next generation photodetection technologies, applications imaging, sensing, communication.
Язык: Английский
Процитировано
0
Ceramics International, Год журнала: 2025, Номер unknown
Опубликована: Март 1, 2025
Язык: Английский
Процитировано
0
Energy & Fuels, Год журнала: 2024, Номер unknown
Опубликована: Дек. 4, 2024
Язык: Английский
Процитировано
2
ChemistrySelect, Год журнала: 2024, Номер 9(33)
Опубликована: Авг. 28, 2024
Abstract Tin(ii) iodide (SnI 2 ) faces significant challenges in photodetector applications, primarily due to its sensitivity moisture and degradation over time. Achieving uniform, high‐quality films with low impurity defect levels is also a challenge. Potential solutions include advanced deposition techniques improve film quality stability, surface passivation encapsulation, doping alloying. In this study, SnI thin have been deposited for the first time using plasma enhanced chemical vapour (PECVD) technique best of our knowledge. Process parameters like pressure RF‐power optimised via non‐intrusive in‐situ V−I probe impedance analyser. on glass & transparent conducting oxide (TCO) p‐Si wafer at various make /p‐Si heterojunction followed by metallization Ag/SnI /p‐Si/Ag photodetector. Characterization thickness measurement, UV‐Vis‐NIR spectroscopy, Photoluminescence glancing incidence x‐ray diffraction (GIXRD), SEM I−V measurements were carried out study optical, structural electronic properties. Fabricated devices, photodiode exhibits critical performance 150 W having rectifying ratio 6.9×10 4 1.0 V photo‐sensitivity 1.6×10 100 mW/cm light intensity.
Язык: Английский
Процитировано
1