Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiOx/Si Heterojunction Photodiodes
Inorganics,
Год журнала:
2025,
Номер
13(1), С. 11 - 11
Опубликована: Янв. 3, 2025
NiOx
is
a
p-type
semiconductor
with
excellent
stability,
which
makes
it
interesting
for
wide
range
of
applications.
Broadband
photodetectors
high
responsivity
(R)
were
fabricated
by
depositing
r.f.-sputtered
layers
on
n-Si
at
room
temperature
(RT),
50
°C
and
100
°C.
In
self-powered
mode
the
RT
diodes
have
R
between
0.95
0.39
A/W
wavelengths
365
635
nm,
while
reverse
bias
−4
V,
increases
to
values
22
10.7
in
same
range.
The
increase
deposition
leads
decrease
but
also
smaller
dark
current.
Thus,
photodiodes
might
be
more
appropriate
applications
where
required,
because
their
power
consumption
compared
diodes.
addition,
was
found
that
an
diodes’
series
resistance
resistivity
NiOx.
effect
Rapid
Thermal
Annealing
(RTA)
properties
studied.
550
6
min
much
higher
as-deposited
However,
disadvantage
annealed
diode
current
depends
amplitude
polarity
previously
applied
voltage.
RTA
them
useful
as
light
sensors.
Язык: Английский
Self-Assembled Monolayer Hole Transport Layers for High-Performance and Stable Inverted Perovskite Solar Cells
Energy & Fuels,
Год журнала:
2024,
Номер
38(21), С. 21371 - 21381
Опубликована: Окт. 18, 2024
NiOx
is
regarded
as
a
kind
of
promising
hole
transport
material
in
inverted
perovskite
solar
cells
(PSCs);
however,
the
uncontrolled
defects
and
unfavorable
reactions
within
layer
go
against
device
stability
power
conversion
efficiency
(PCE).
The
pristine
(HTL)-based
PSCs
usually
require
additional
doping
or
interface
engineering,
which
tends
to
introduce
defects/sharp
interfaces
thus
affect
performance.
In
this
study,
MeO-2PACz,
type
self-assembled
materials
(SAMs),
was
chosen
replace
standard
HTL
employed
PSCs,
since
it
possesses
potential
for
manufacturing
high-performance
stable
PSCs.
results
demonstrated
that
MeO-2PACz
interacts
with
uncoordinated
Pb2+
film,
effectively
passivating
buried
defects.
Besides,
film
deposited
on
has
improved
crystallization
quality
abated
grain
boundaries.
Meanwhile,
good
band
alignment
HTL/perovskite
minimizes
nonradiative
recombination
loss
at
interface,
considerably
boosting
charge
extraction/transport
Accordingly,
based
achieved
champion
PCE
21.61%
fill
factor
(FF)
82.30%,
accompanied
by
stability,
maintaining
94.0%
its
initial
after
3000
h
storage
ambient
air
without
encapsulation
25
°C.
Hopefully,
work
presents
novel
approach
overcome
shortcomings
HTL-based
guaranteeing
better
Язык: Английский
Potential of Cs4CuSb2Cl12 Double Perovskite as an Absorber for Lead‐Free Solar Cells with Double‐Hole‐Transfer‐Layer Design
physica status solidi (a),
Год журнала:
2025,
Номер
unknown
Опубликована: Фев. 10, 2025
Herein,
Cs
4
CuSb
2
Cl
12
double
perovskite
is
optimized
as
an
absorber
layer
for
solar
cells
(PSCs).
Special
attention
given
to
the
design
of
cell
with
a
single
hole
transfer
(single‐HTL)
or
(double‐HTL).
Optimizations
and
HTL
are
performed
parameters
including
thickness,
defect
density,
mobility,
absorption
coefficient,
capture
cross
section.
Parameters
cells,
energy
bands,
recombination
characteristics
examined
in
detail,
optimum
values
determined
considering
practical
applications.
Decreased
increased
current
flow
can
be
established
by
double‐HTL
design.
For
example,
18.26,
19.74,
19.84%
conversion
efficiencies
observed
when
using
P3HT,
Spiro‐OMeTAD,
NiO
single‐HTL
on
design,
respectively.
The
valance
band
offset
(VBO)
at
absorber/copper
nickel
tin
sulfide
(CNTS)
CNTS/NiO
interfaces
0.27
0.21
eV
which
lower
than
VBO
absorber/CuSbS
CuSbS
/NiO
0.44
0.37
eV,
Efficiencies
reach
19.88
19.95%
double‐HTLs,
optimizations
PSCs
introduced
this
work
contribute
better
knowledge
such
materials
designs.
Язык: Английский
NiFe2O4 Nanoparticles as Highly Sensitive Electrochemical Sensor for Nitrite Determination
Applied Organometallic Chemistry,
Год журнала:
2025,
Номер
39(4)
Опубликована: Март 24, 2025
ABSTRACT
Taking
into
account
the
harmful
influence
of
superfluous
nitrite
content
onto
ecosystem
and
human
health,
sensitive
real‐time
estimation
its
concentration
by
developing
reduced
cost
efficient
catalytic
surfaces
seems
as
a
vital
problem
to
be
solved.
Herein,
sensing
platform
for
ions
in
water
samples
was
designated
based
on
mixed
transition
metal
oxides.
NiFe
2
O
4
nanoparticles
were
fabricated
using
simple
straightforward
sol–gel
protocol
followed
calcination
at
900°C.
Convenient
physical
characterization
tools
employed
investigate
crystal
structure,
morphological,
chemical
composition,
elemental
mapping
distribution
this
formed
nanocomposite.
The
cubic
spinel
structure
confirmed
XRD
TEM
analyses.
average
crystallite
size
estimated
25.70
nm
wide
particle
range
between
10
50
nm.
Cyclic
voltammetric
study
revealed
pronounced
oxidation
current
density
nanomaterial
when
contrasted
that
Fe
3
1.283
times.
altering
scan
rate
electrolyte
pH
during
relevant
electrochemical
measurements
electroactivity
oxide
nanostructure
evaluated.
Some
kinetic
parameters
reaction
nanocomposite
including
Tafel
slope
(59.96
mV
dec
−1
),
exchange
(2.13
×
−7
A
cm
−2
diffusion
coefficient
(1.178
−3
s
electron
transfer
constant
(2.074
)
values.
linear
towards
with
outstanding
sensitivity
70.57
nA
μM
lowered
detection
limit
23.9
nM
could
monitored
nanopowder.
These
encouraging
results
might
focus
further
efforts
synthesizing
binary
oxides
surprising
activity
numerous
analytes
determination.
Язык: Английский
An overview of solar cell simulation tools
Solar Energy Advances,
Год журнала:
2024,
Номер
5, С. 100077 - 100077
Опубликована: Ноя. 10, 2024
Язык: Английский
Numerical Investigation and Device Architecture Optimization of Sb2Se3 Thin-Film Solar Cells Using SCAPS-1D
Materials,
Год журнала:
2024,
Номер
17(24), С. 6203 - 6203
Опубликована: Дек. 19, 2024
Antimony
selenide
(Sb2Se3)
shows
promise
for
photovoltaics
due
to
its
favorable
properties
and
low
toxicity.
However,
current
Sb2Se3
solar
cells
exhibit
efficiencies
significantly
below
their
theoretical
limits,
primarily
interface
recombination
non-optimal
device
architectures.
This
study
presents
a
comprehensive
numerical
investigation
of
thin-film
using
SCAPS-1D
simulation
software,
focusing
on
architecture
optimization
engineering.
We
systematically
analyzed
configurations
(substrate
superstrate),
hole-transport
layer
(HTL)
materials
(including
NiOx,
CZTS,
Cu2O,
CuO,
CuI,
CuSCN,
CZ-TA,
Spiro-OMeTAD),
thicknesses,
carrier
densities,
resistance
effects.
The
substrate
configuration
with
molybdenum
back
contact
demonstrated
superior
performance
compared
the
superstrate
design,
energy
band
alignment
at
Mo/Sb2Se3
interface.
Among
investigated
HTL
materials,
Cu2O
exhibited
optimal
minimal
valence-band
offset,
achieving
maximum
efficiency
0.06
μm
thickness.
Device
revealed
critical
parameters:
series
should
be
minimized
0–5
Ω-cm2
while
maintaining
shunt
above
2000
Ω-cm2.
optimized
Mo/Cu2O(0.06
μm)/Sb2Se3/CdS/i-ZnO/ITO/Al
structure
achieved
remarkable
power
conversion
(PCE)
21.68%,
representing
significant
improvement
from
14.23%
in
conventional
without
HTL.
provides
crucial
insights
practical
development
high-efficiency
cells,
demonstrating
impact
engineering
overall
performance.
Язык: Английский