Enhancing the fill factor and power conversion efficiency of n-type TOPCon solar cells by using electron migration technique DOI

Maha Nur Aida,

Polgampola Chamani Madara,

Muhammad Quddamah Khokhar

и другие.

Infrared Physics & Technology, Год журнала: 2024, Номер 141, С. 105392 - 105392

Опубликована: Июнь 5, 2024

Язык: Английский

Effect of Optimized Tilt Angle of PV Modules on Solar Irradiance for Residential and Commercial Buildings in Different Cities of Pakistan: Simulation‐Based Study DOI Creative Commons
Habib Ullah Manzoor, Sheikh Muhammad Aaqib,

Tareq Manzoor

и другие.

Energy Science & Engineering, Год журнала: 2025, Номер unknown

Опубликована: Фев. 21, 2025

ABSTRACT The tilt angle of a solar PV panel is critical factor in improving the efficiency photovoltaic (PV) systems. While tracking systems can enhance performance, they are typically not cost‐effective for residential areas. Alternatively, setting an optimized fixed or adjusting seasonally mitigate power losses. This study evaluates optimal seasonal angles and corresponding radiation on panels 10 major cities across Pakistan. A novel mathematical framework proposed to calculate using parameters such as alignment, azimuth, gradient, temporal angles. Seasonal adjustments shown increase intensity from during winter, significantly enhancing output power. For instance, improvement up density was observed at Quaid‐e‐Azam Solar Park crystalline cells. These findings demonstrate potential substantial improvements production through angles, particularly shorter winter days.

Язык: Английский

Процитировано

1

Addressing fabrication challenges in perovskite-silicon tandem solar cells with advanced simulation techniques DOI Creative Commons
Raman Kumar, Prakash Kanjariya,

A. Abu-Jrai

и другие.

Materials for Renewable and Sustainable Energy, Год журнала: 2025, Номер 14(1)

Опубликована: Фев. 4, 2025

Abstract In the pursuit of higher conversion efficiency, PV industry has turned its focus towards perovskite-silicon tandem solar cells, which currently represent peak innovation. To surpass efficiency limits traditional single-junction researchers are exploring potential these cells by integrating merits perovskite and silicon. However, brings different challenges, such as deposition methods material misalignments. Thus, in this work, we using advanced simulation techniques, including Silvaco ATLAS’s Victory Process Device Simulator to imitate actual manufacturing processes. Primarily research work focuses on three scenarios: shunting, planarization conformal emulate experimental conditions. The obtained results show effectiveness process simulations accurately predicting improving performance cell. Two designed showed a 27.51% 29.08% respectively. This highlights importance tools for further development cell technology. Detailed device reported may pave way fabrication optimised perovskite/silicon

Язык: Английский

Процитировано

0

Insights into nitrogen-incorporated nano silicon oxide on the passivation performance of p-type tunneling oxide passivating contact structures DOI Creative Commons

Ruoyi Wang,

Haiyang Xing,

Zetao Ding

и другие.

Journal of Applied Physics, Год журнала: 2025, Номер 137(9)

Опубликована: Март 4, 2025

Although n-type tunneling oxide passivating contact (TOPCon) solar cells dominate the mainstream crystalline silicon (c-Si) technologies in photovoltaic market, p-type TOPCon also hold great potential to advance technology and may achieve efficiencies comparable heterojunction future due their unique passivation method. In this study, we investigate a method for introducing nitrogen (N) atoms into SiOx layer using N2O/NH3 mixture gas, aiming reduce B diffusion activation at SiOx/poly-Si interface within c-Si substrate. Our findings indicate that while incorporating N layers prepared with gas significantly suppresses substrate reduces both substrate, performance of N-doped remains relatively low. contrast, pure N2O demonstrates higher passivation, achieving an implied open-circuit voltage (iVoc) 723 mV low single-sided recombination current density (J0,s) 9.6 fA/cm2. This disparity is attributed presence SiOx, which leads thinner layer, reduced Si4+ content, increased surface defects, thereby counteracting beneficial effects doping. study provides comprehensive insights impact on TOPCon, along underlying mechanisms, providing valuable enhancing passivation.

Язык: Английский

Процитировано

0

High-performance boron emitters for tunnel oxide passivating contact solar cells enabled by multi-layer PECVD-deposited boron source structures DOI

Haojiang Du,

Xian Zhang, Wei Liu

и другие.

Chemical Engineering Journal, Год журнала: 2025, Номер unknown, С. 163487 - 163487

Опубликована: Май 1, 2025

Язык: Английский

Процитировано

0

Enhancing the fill factor and power conversion efficiency of n-type TOPCon solar cells by using electron migration technique DOI

Maha Nur Aida,

Polgampola Chamani Madara,

Muhammad Quddamah Khokhar

и другие.

Infrared Physics & Technology, Год журнала: 2024, Номер 141, С. 105392 - 105392

Опубликована: Июнь 5, 2024

Язык: Английский

Процитировано

1