NiSe layer enhanced the efficiency of hole-conductor-free MAPbI3 perovskite solar cells DOI
Xiaohui Lu,

Xiandong Zhao,

Congcong Wu

и другие.

Journal of Materials Chemistry C, Год журнала: 2024, Номер 13(5), С. 2517 - 2523

Опубликована: Ноя. 29, 2024

The introduction of NiSe effectively reduces the defect density within device and lowers interfacial energy transfer barrier.

Язык: Английский

Perovskite-based transparent pn junction in CuI/SrTiO3 toward enhanced photoelectric response via interfacial homogeneous perovskite LaCoO3 transition layer DOI
Xinyan Lv,

Yang Wei,

Zefeng Cai

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(9)

Опубликована: Март 1, 2025

A transparent pn junction comprising CuI/LaCoO3 QDs/SrTiO3 was synthesized using the solgel-hydrothermal-freeze drying-sputtering in situ iodization method. The achieves transmittance of ∼85%, photoelectric enhancement ∼2.2 × 103-fold to intrinsic CuI/SrTiO3, and good stability 5 months. It can be primarily attributed LaCoO3 QDs. In addition appropriate Fermi level high QY, QDs with carrier inducing–injecting–driving ameliorate dynamics for PCE-transparency balance, meanwhile increasing hole by Cu vacancy. Furthermore, CuI, LaCoO3, SrTiO3 maintain structural potential devices.

Язык: Английский

Процитировано

4

NiSe layer enhanced the efficiency of hole-conductor-free MAPbI3 perovskite solar cells DOI
Xiaohui Lu,

Xiandong Zhao,

Congcong Wu

и другие.

Journal of Materials Chemistry C, Год журнала: 2024, Номер 13(5), С. 2517 - 2523

Опубликована: Ноя. 29, 2024

The introduction of NiSe effectively reduces the defect density within device and lowers interfacial energy transfer barrier.

Язык: Английский

Процитировано

0