Modern Physics Letters B,
Год журнала:
2023,
Номер
38(04)
Опубликована: Авг. 31, 2023
Excellent
semiconductors
and
novel
optical
properties
are
the
first
criteria
for
nanomaterial
technology.
In
this
paper,
S-atom
defect
is
applied
to
1T-NbS
2
time,
doping
atoms
introduced.
The
concentration
of
3.84%
4%
under
two
types
defects.
Finally,
metallic
NbS
were
weakened
successfully,
highest
indirect
band
gap
0.27[Formula:
see
text]eV
was
induced,
which
gradually
transformed
into
a
brand-new
semiconductor
material.
addition,
partially
composite
systems
exhibit
excellent
electromagnetic
storage,
polarizability,
infrared
light
absorption,
showing
high
reflectivity
in
visible
low-frequency
UV
regions,
can
be
used
make
blackout
lenses
reflective
coatings.
Cd
as
new
type
conducting
all
kinds
equipment.
ACS Sensors,
Год журнала:
2023,
Номер
8(9), С. 3510 - 3519
Опубликована: Авг. 10, 2023
The
electronic
transport
properties
of
the
four
carbon
isomers:
graphene+,
T-graphene,
net-graphene,
and
biphenylene,
as
well
gas-sensing
to
nitrogen-based
gas
molecules
including
NO2,
NO,
NH3
molecules,
are
systematically
studied
comparatively
analyzed
by
combining
density
functional
theory
with
nonequilibrium
Green's
function.
isomers
metallic,
especially
graphene+
being
a
Dirac
metal
due
two
cones
present
at
Fermi
energy
level.
two-dimensional
devices
based
on
these
exhibit
good
conduction
in
order
biphenylene
>
T-graphene
net-graphene.
More
interestingly,
net-graphene-based
biphenylene-based
demonstrate
significant
anisotropic
properties.
sensors
above
structures
all
have
selectivity
sensitivity
NO2
molecule,
among
which
T-graphene-based
most
prominent
maximum
ΔI
value
39.98
μA,
only
three-fifths
original.
In
addition,
graphene+-based
also
sensitive
NO
molecule
values
29.42
25.63
respectively.
However,
physically
adsorbed
for
molecule.
By
adsorption
energy,
charge
transfer,
electron
localization
functions,
molecular
projection
self-consistent
Hamiltonian
states,
mechanisms
behind
can
be
clearly
explained.
This
work
shows
potential
detection
toxic
NO2.
Journal of Materials Chemistry C,
Год журнала:
2023,
Номер
11(27), С. 9114 - 9123
Опубликована: Янв. 1, 2023
The
I
–
V
curves
of
2D
G–BPN–G
devices
exhibit
intrinsic
NDR
characteristics.
Adjustable
metal-to-semiconductor
can
be
achieved
by
varying
the
combination
H
and
O
passivated
cells
in
Q1D
nanoribbons
based
nanodevices.
ACS Applied Nano Materials,
Год журнала:
2023,
Номер
7(16), С. 18299 - 18308
Опубликована: Ноя. 6, 2023
Two-dimensional
heterojunction
materials
show
great
potential
for
a
wide
range
of
applications
with
their
tunable
properties,
such
as
versatility
and
low-dimensional
confinement
effects.
The
electronic
structure,
transport,
optical
properties
Janus
WSSe/g-GeC
heterojunctions
are
investigated
in-depth
using
density
functional
theory
combined
nonequilibrium
Green's
function
approach.
results
that
the
can
be
effectively
tuned
by
applying
vertical
biaxial
strain.
In
particular,
when
strain
±10%
is
applied,
it
transform
from
semiconductor
to
metallic
properties.
addition,
we
found
exhibits
excellent
strong
absorption
peak
in
visible
region.
this
heterojunction-based
PIN
junction,
considerable
photocurrents
generated
range,
especially
region
1.7
3.1
eV,
where
significant
photocurrent
peaks
appear,
modulate
peaks.
device
performance
high
current
switching
ratio
1011
at
±10%,
showing
perfect
diode
behavior.
summary,
tuning
applied
strain,
its
exhibit
response.
have
optoelectronic
devices.
These
findings
provide
important
references
guidance
further
development
practical
based
on
heterojunctions.
Langmuir,
Год журнала:
2024,
Номер
40(29), С. 14872 - 14887
Опубликована: Июль 12, 2024
Nowadays,
the
development
of
clean
and
green
energy
sources
is
priority
interest
research
due
to
increasing
global
demand
extensive
usage
fossil
fuels,
which
create
pollutants.
Hydrogen
has
highest
density
by
weight
among
all
chemical
fuels.
For
commercial-scale
production
hydrogen,
water
electrolysis
best
method,
requires
an
efficient,
cost-effective,
earth-abundant
electrocatalyst.
Recent
studies
have
shown
that
2D
Janus
transition
metal
dichalcogenides
(JTMDs)
are
promising
materials
for
use
as
electrocatalysts
highly
effective
electrocatalytic
H
Laser & Photonics Review,
Год журнала:
2024,
Номер
unknown
Опубликована: Ноя. 30, 2024
Abstract
Exploring
the
extraordinary
optoelectronic
properties
of
two‐dimensional
(2D)
materials
to
construct
advanced
devices
is
a
major
goal
for
academic
researchers
and
industrialists.
Emerging
2D
Janus
are
innovative
class
in
which
two
sides
either
asymmetrical
functionalized
or
exposed
different
environments.
Distinctive
features
such
as
tunable
bandgaps,
electronic
structures,
presence
Rashba
effects,
excitonic
piezoelectric
effects
etc.
make
its
magnificent
candidates
devices.
The
van
der
Waals
(vdWs)
heterostructure
with
novel
assembled
by
low
dimensional
provides
new
opportunities
promising
applications.
This
review
aims
offer
recent
advances
inside
mechanism
vdWs
from
an
optoelectronics
point
view.
Here,
latest
progress
including
their
heterostructures
perspective
theoretical
prediction,
synthesis
techniques
presented.
investigation
physical
device
applications
summarized.
Finally,
future
directions,
challenges,
regarding
research
process
discussed
designing
Physica Scripta,
Год журнала:
2024,
Номер
99(8), С. 082001 - 082001
Опубликована: Июль 11, 2024
Abstract
Scientific
and
technical
communities
often
debate
photodetection
as
a
significant
technology
due
to
its
unquestionable
extensive
usage
in
business
research.
Traditional
bulk
semiconductors
like
GaN,
Si,
InGaAs
are
being
used
less
for
industry
because
they
aren’t
mechanically
stable
or
flexible
enough,
have
expensive
substrates,
charge
carriers
can’t
move
around
freely
enough.
Nonetheless,
2D
materials
such
transition-metal
nitrides,
chalcogenides,
carbides,
addition
graphene,
leading
the
path
toward
achieving
more
sophisticated
results
surpassing
limitations
imposed
by
traditional
semiconductors.
This
is
their
exceptional
electronic
mechanical
properties,
which
include
flexibility,
adjustable
bandgaps,
high
mobilities,
ample
potential
constructing
heterojunctions
of
chalcogenides-based
thin
films.
Given
recent
surge
research,
field
has
expanded
significantly
requires
systematic
compilation
pertinent
scientific
knowledge.
A
comprehensive
study
must
address
many
aspects
film
manufacturing
strategies,
assembly
procedures,
device
integration,
spectral
heterojunction
potential,
future
research
prospects.
paper
specifically
examines
use
photodetection.
These
areas
solar-blind,
visible,
near-infrared,
broadband
detectors.
We
our
discussion
photodetector
performance
parameters
how
latest
films
formed
combining
ordinary
resulted
high-performance
UV,
IR
range
be
photodetectors.
Ultimately,
we
provide
comparative
demonstration
characteristics
photodetectors,
offering
distinct
assessment
suitability
these
advancement
next-generation
