Dft Study of Sensing Properties of Defected and Transition-Metal Doped V2cf2 Towards Ch4 DOI
Yajing Wang, Qingxiao Zhou, Jie Hou

и другие.

Опубликована: Янв. 1, 2023

As a new type of gas sensor, MXenes material is great significance in indoor harmful detection. The geometric, electronic, and magnetic properties CH4 adsorbed on intact, F-vacancy defected, transition-metal (TMs: Mn, Co, Ni, Zn, Nb, Mo) doped V2CF2 have been investigated based density functional theory. Perfect defected substrates exhibited low charge transfer, long adsorption distance, small energy for CH4. mechanism was physical adsorption. After introducing Co Ni dopants, the changed to be chemisorption. Additionally, asymmetric electron spin distribution between dopant V atom caused substrate change from being non-magnetic magnetic, as shown by electronic states diagrams. hybridization TM-3d orbitals p molecule significantly improved stability. It hoped that results could provide ideas creating sensors MXenes.

Язык: Английский

MgTe for efficient adsorption of lithium-ion battery fault gases (H2, CO, and CO2) and failure risk index calculation: a DFT computational study DOI

Jinjie Wang,

Xiyang Zhong, Yue Shen

и другие.

Surfaces and Interfaces, Год журнала: 2024, Номер 53, С. 104995 - 104995

Опубликована: Авг. 25, 2024

Язык: Английский

Процитировано

0

Strain tunable electronic, optical, and photovoltaic properties of monolayer β2-SrX2Y4 (X = Al, Ga, In, Y = S, Se) DOI

Jinyou Li,

Cai Cheng,

Junqi Li

и другие.

Surfaces and Interfaces, Год журнала: 2024, Номер unknown, С. 105118 - 105118

Опубликована: Сен. 1, 2024

Язык: Английский

Процитировано

0

Significant enhancement of perpendicular magnetic anisotropy in Fe/MoSi2N4 by hole doping DOI
Fei Guo,

Yuanmiao Xie,

Xiaoqi Huang

и другие.

Journal of Physics D Applied Physics, Год журнала: 2024, Номер 57(16), С. 165001 - 165001

Опубликована: Янв. 9, 2024

Abstract This study proposes a novel approach to enhanced the perpendicular magnetic anisotropy (PMA) of Fe adsorbed on MoSi 2 N 4 substrate through hole doping. First principles calculations are employed investigate PMA freestanding and Fe/MoSi complex system. It is found that atom slightly increases from monolayer system, which attributed overlap between Fe- 3d N- 2p orbitals. More interestingly, it atoms in can be further by doping, enables increase significantly, up four times original value. finding provides promising way enhance two-dimensional (2D) spintronic devices. These results offering potential applications developing advanced 2D

Язык: Английский

Процитировано

0

Dft Study of Sensing Properties of Defected and Transition-Metal Doped V2cf2 Towards Ch4 DOI
Yajing Wang, Qingxiao Zhou, Jie Hou

и другие.

Опубликована: Янв. 1, 2023

As a new type of gas sensor, MXenes material is great significance in indoor harmful detection. The geometric, electronic, and magnetic properties CH4 adsorbed on intact, F-vacancy defected, transition-metal (TMs: Mn, Co, Ni, Zn, Nb, Mo) doped V2CF2 have been investigated based density functional theory. Perfect defected substrates exhibited low charge transfer, long adsorption distance, small energy for CH4. mechanism was physical adsorption. After introducing Co Ni dopants, the changed to be chemisorption. Additionally, asymmetric electron spin distribution between dopant V atom caused substrate change from being non-magnetic magnetic, as shown by electronic states diagrams. hybridization TM-3d orbitals p molecule significantly improved stability. It hoped that results could provide ideas creating sensors MXenes.

Язык: Английский

Процитировано

0