As
society
develops,
people
pay
more
attention
to
the
application
of
solar
cell
harvest
inexhaustible
power,
which
has
a
benefit
greenness
and
cleanness.
In
this
paper,
we
construct
14
heterostructures
composed
g-C3N4
Ⅲ-Ⅴ
materials
based
on
first-principles
calculations.
We
systematically
analyse
their
stability
property
find
periodic
rule
binding
energy
change
about
atomic
number
material.
select
9
stable
van
der
Waals
(vdWs)
further
band
alignment
power
conversion
efficiency
(PCE).
CN/GaAs-Gadown
is
type-Ⅱ
heterostructure
with
indirect
gap
1.38
eV
PCE
reaches
15.2%.
The
construction
effectively
promotes
optical
absorption
in
visible-spectrum
compared
two
monolayers.
This
paper
analyses
constructed
vdWs
materials,
electronic
structures
potential
as
cell.
E3S Web of Conferences,
Год журнала:
2024,
Номер
588, С. 03011 - 03011
Опубликована: Янв. 1, 2024
The
current
study
was
designed
in
order
to
the
electrical
and
structural
properties
of
heterostructures
TMD
BP
through
Raman
spectrum
mapping
technique,
Scanning
electron
microscopy
(SEM)
Correlative
Probe
(CPEM).
Single
few
layer
were
prepared
by
mechanical
exfoliation
transferred
onto
a
silicon
substrate
poly(methyl
methacrylate)
(PMMA)
transfer
method.
Optical
CPD
manifested
increased
signal
intensity
at
edges
flake,
spectroscopy
indicated
definite
density
near
fringes
flake.
In
this
system,
scanning
studies
performed
employing
range
accelerating
voltages
have
supported
presence
electronic
domains
within
especially
their
borderlines.
CPEM
analysis
showed
significant
correlation
between
topographical
contrast,
where
former
attributed
an
intense
accumulation
electrons
edge
flake
not
due
flaws.
These
results
highlight
fact
that
TMD/BP
possess
relatively
unique
may
be
suitable
for
future
optoelectronic
applications.
As
society
develops,
people
pay
more
attention
to
the
application
of
solar
cell
harvest
inexhaustible
power,
which
has
a
benefit
greenness
and
cleanness.
In
this
paper,
we
construct
14
heterostructures
composed
g-C3N4
Ⅲ-Ⅴ
materials
based
on
first-principles
calculations.
We
systematically
analyse
their
stability
property
find
periodic
rule
binding
energy
change
about
atomic
number
material.
select
9
stable
van
der
Waals
(vdWs)
further
band
alignment
power
conversion
efficiency
(PCE).
CN/GaAs-Gadown
is
type-Ⅱ
heterostructure
with
indirect
gap
1.38
eV
PCE
reaches
15.2%.
The
construction
effectively
promotes
optical
absorption
in
visible-spectrum
compared
two
monolayers.
This
paper
analyses
constructed
vdWs
materials,
electronic
structures
potential
as
cell.
