Design of Van Der Waals Heterostructures Composed of G-C3n4 and Ⅲ-Ⅴ Materials for Solar Cell DOI
Jiaxiang Zhao, Lihong Han, Baonan Jia

и другие.

Опубликована: Янв. 1, 2023

As society develops, people pay more attention to the application of solar cell harvest inexhaustible power, which has a benefit greenness and cleanness. In this paper, we construct 14 heterostructures composed g-C3N4 Ⅲ-Ⅴ materials based on first-principles calculations. We systematically analyse their stability property find periodic rule binding energy change about atomic number material. select 9 stable van der Waals (vdWs) further band alignment power conversion efficiency (PCE). CN/GaAs-Gadown is type-Ⅱ heterostructure with indirect gap 1.38 eV PCE reaches 15.2%. The construction effectively promotes optical absorption in visible-spectrum compared two monolayers. This paper analyses constructed vdWs materials, electronic structures potential as cell.

Язык: Английский

Design of van der Waals heterostructures composed of g-C3N4 and III-V materials for solar cell DOI
Jiaxiang Zhao, Lihong Han, Baonan Jia

и другие.

Surfaces and Interfaces, Год журнала: 2024, Номер 50, С. 104425 - 104425

Опубликована: Апрель 30, 2024

Язык: Английский

Процитировано

0

Enhanced performance of a promising Au/TMDC heterostructure composed of MoTe2 nanosheets decorated with Au5 clusters: A DFT study DOI
Esmail Vessally, Rovnag Rzayev, Bayan Azizi

и другие.

Computational and Theoretical Chemistry, Год журнала: 2024, Номер 1242, С. 114933 - 114933

Опубликована: Ноя. 4, 2024

Язык: Английский

Процитировано

0

Electronic and Structural Analysis of TMD/BP Heterostructures: Insights from Raman Spectroscopy, SEM, and Correlative Probe Electron Microscopy DOI Creative Commons

Ashlin Deepa R N,

Neha Saini, Madhur Taneja

и другие.

E3S Web of Conferences, Год журнала: 2024, Номер 588, С. 03011 - 03011

Опубликована: Янв. 1, 2024

The current study was designed in order to the electrical and structural properties of heterostructures TMD BP through Raman spectrum mapping technique, Scanning electron microscopy (SEM) Correlative Probe (CPEM). Single few layer were prepared by mechanical exfoliation transferred onto a silicon substrate poly(methyl methacrylate) (PMMA) transfer method. Optical CPD manifested increased signal intensity at edges flake, spectroscopy indicated definite density near fringes flake. In this system, scanning studies performed employing range accelerating voltages have supported presence electronic domains within especially their borderlines. CPEM analysis showed significant correlation between topographical contrast, where former attributed an intense accumulation electrons edge flake not due flaws. These results highlight fact that TMD/BP possess relatively unique may be suitable for future optoelectronic applications.

Язык: Английский

Процитировано

0

First-principles investigation of XMoSiY2/XWSiY2 and XMSiY2/MoSeTe (X= Se, Te; M = Mo, W; Y = P, As) van der Waals heterostructures for high-efficiency photovoltaic applications DOI

Reza Karimi,

Nayereh Ghobadi

Journal of Physics and Chemistry of Solids, Год журнала: 2024, Номер unknown, С. 112545 - 112545

Опубликована: Дек. 1, 2024

Язык: Английский

Процитировано

0

Design of Van Der Waals Heterostructures Composed of G-C3n4 and Ⅲ-Ⅴ Materials for Solar Cell DOI
Jiaxiang Zhao, Lihong Han, Baonan Jia

и другие.

Опубликована: Янв. 1, 2023

As society develops, people pay more attention to the application of solar cell harvest inexhaustible power, which has a benefit greenness and cleanness. In this paper, we construct 14 heterostructures composed g-C3N4 Ⅲ-Ⅴ materials based on first-principles calculations. We systematically analyse their stability property find periodic rule binding energy change about atomic number material. select 9 stable van der Waals (vdWs) further band alignment power conversion efficiency (PCE). CN/GaAs-Gadown is type-Ⅱ heterostructure with indirect gap 1.38 eV PCE reaches 15.2%. The construction effectively promotes optical absorption in visible-spectrum compared two monolayers. This paper analyses constructed vdWs materials, electronic structures potential as cell.

Язык: Английский

Процитировано

0