Journal of Materials Science Materials in Electronics,
Год журнала:
2023,
Номер
34(36)
Опубликована: Дек. 1, 2023
Abstract
Herein,
PVA:
PVP@Ni(OAc)
2
nanocomposite
spin-coated
thin
films
have
been
fabricated
as
a
barrier
modifier
interlayer
in
metal/polymer/semiconductor
configuration
for
light
detection
applications.
The
nanostructure,
well
the
surface
roughness
profile
of
deposited
films,
inspected
using
high-resolution
transmission
electron
microscope
(HR-TEM)
and
field
emission
scan
(FE-SEM).
obtained
results
showed
nanoplatelet
architecture
with
smooth
surfaces
average
~
7.08
nm.
optical
absorption,
reflection,
spectra
analyzed
value
film’s
energy
gap
has
confirmed
several
analytical
approaches.
Furthermore,
DC
electrical
properties
Ag/Si
(n-type
p
-type),
Ag/polymer
nanocomposite/Si
(
n
-type
investigated
under
dark
conditions.
microelectronic
estimated
thermionic
emission,
Norde’s,
Cheung-Cheung’s
models.
Besides,
mechanistic
details
charge
transport
explored
forward
reverse
bias
photoresponsive
features
designed
Ag/
PVA/PVP@Ni(OAc)
/p-Si
junction
evaluated
different
illumination
intensities.
current
device
achieved
superior
photodetection
capability
high
responsivity,
detectivity,
fast
switching
behavior.
Physica Scripta,
Год журнала:
2024,
Номер
99(2), С. 025993 - 025993
Опубликована: Янв. 18, 2024
Abstract
In
this
work,
a
novel
smart
(shape
memory)
alloy
metalized
photonic
silicon
wafer
photodiode
with
Schottky
type
CuAlV/n-Si/Al
contact
structure
as
nano-electro-mechanical-system
(NEMS)
photodevice
was
fabricated
by
thermal
evaporation
technique.
The
CuAlV
memory
used
the
top
metal
electrode
produced
arc
melting
technique
and
subsequent
quenching
in
an
iced-brine
water
medium,
its
shape
effect
characteristics
were
revealed
structural
tests.
NEMS
characterized
different
photo-electrical
(I-V,
I-t)
frequency/time
dependent
illuminated
capacitance
(C–V/f,
C-t,
C–V/ill.)
conductance-voltage
(G-V)
measurements
under
frequencies
artificial
light
intensity
power
conditions.
I-V
tests
showed
excellent
current
rectifying
ability
very
well
net
photocurrent
generation
features
of
photodiode.
specific
detectivity
found
high
almost
approaching
10
11
Jones.
SCLC
(space
charge
limited
conduction)
analyses
made
on
double-log
plots
that
trap-filling
TFL-SCLC
trap-free
conduction
mechanisms
are
two
prevailing
forward
bias
voltage
region.
density
interface
states
(D
it
)
determined.
Moreover,
reproducibility
light-induced
photocapacitance
formation
demonstrated
C–V/t
intensities.
Physica B Condensed Matter,
Год журнала:
2023,
Номер
666, С. 415111 - 415111
Опубликована: Июль 6, 2023
This
study
investigates
the
fabrication
and
performance
analysis
of
Al/CuO:LaB6/p-Si/Al
diodes
with
CuO-doped
LaB6
interlayer
films
varying
concentrations
(1%,
5%,
10%).
Experimental
evidence
demonstrates
limitations
0%
CuO
doping,
as
pure
lacks
a
significant
barrier
height,
resulting
in
ohmic
behavior
unsuitable
for
intended
applications.
Through
comprehensive
analyses
under
illuminations
(20–100
mW/cm2)
frequencies
(10
kHz–1
MHz),
reveals
that
controlling
doping
significantly
enhances
effective
height
at
LaB6:CuO
heterojunction,
improving
rectification
properties.
enhancement
enables
diode
to
be
well-suited
high-speed
photonic
devices
utilizing
one-step
photoemission.
The
findings
contribute
development
high-performance
LaB6-based
devices,
advancing
technologies
by
emphasizing
advantages
doping.
