Mechanistic exploration of charge transport and photosensitivity of metal/polymer/semiconductor (MPS) junction for sensitive light detection applications DOI Creative Commons
Ahmed M. El-Mahalawy,

Mahmoud M. Abdrabou,

Shehab A. Mansour

и другие.

Journal of Materials Science Materials in Electronics, Год журнала: 2023, Номер 34(36)

Опубликована: Дек. 1, 2023

Abstract Herein, PVA: PVP@Ni(OAc) 2 nanocomposite spin-coated thin films have been fabricated as a barrier modifier interlayer in metal/polymer/semiconductor configuration for light detection applications. The nanostructure, well the surface roughness profile of deposited films, inspected using high-resolution transmission electron microscope (HR-TEM) and field emission scan (FE-SEM). obtained results showed nanoplatelet architecture with smooth surfaces average ~ 7.08 nm. optical absorption, reflection, spectra analyzed value film’s energy gap has confirmed several analytical approaches. Furthermore, DC electrical properties Ag/Si (n-type p -type), Ag/polymer nanocomposite/Si ( n -type investigated under dark conditions. microelectronic estimated thermionic emission, Norde’s, Cheung-Cheung’s models. Besides, mechanistic details charge transport explored forward reverse bias photoresponsive features designed Ag/ PVA/PVP@Ni(OAc) /p-Si junction evaluated different illumination intensities. current device achieved superior photodetection capability high responsivity, detectivity, fast switching behavior.

Язык: Английский

Exploration of photoresponsivity, specific detectivity and interface properties of Au/ZnPc/InP/In photodiode at different illumination wavelengths DOI

Anjeeta Rani,

S. Ashajyothi,

A. Ashok Kumar

и другие.

Thin Solid Films, Год журнала: 2024, Номер unknown, С. 140594 - 140594

Опубликована: Дек. 1, 2024

Язык: Английский

Процитировано

0
Mechanistic exploration of charge transport and photosensitivity of metal/polymer/semiconductor (MPS) junction for sensitive light detection applications DOI Creative Commons
Ahmed M. El-Mahalawy,

Mahmoud M. Abdrabou,

Shehab A. Mansour

и другие.

Journal of Materials Science Materials in Electronics, Год журнала: 2023, Номер 34(36)

Опубликована: Дек. 1, 2023

Abstract Herein, PVA: PVP@Ni(OAc) 2 nanocomposite spin-coated thin films have been fabricated as a barrier modifier interlayer in metal/polymer/semiconductor configuration for light detection applications. The nanostructure, well the surface roughness profile of deposited films, inspected using high-resolution transmission electron microscope (HR-TEM) and field emission scan (FE-SEM). obtained results showed nanoplatelet architecture with smooth surfaces average ~ 7.08 nm. optical absorption, reflection, spectra analyzed value film’s energy gap has confirmed several analytical approaches. Furthermore, DC electrical properties Ag/Si (n-type p -type), Ag/polymer nanocomposite/Si ( n -type investigated under dark conditions. microelectronic estimated thermionic emission, Norde’s, Cheung-Cheung’s models. Besides, mechanistic details charge transport explored forward reverse bias photoresponsive features designed Ag/ PVA/PVP@Ni(OAc) /p-Si junction evaluated different illumination intensities. current device achieved superior photodetection capability high responsivity, detectivity, fast switching behavior.

Язык: Английский

Процитировано

1