Controllable synthesis of core-shell SiO2@CeO2 composite abrasives for chemical mechanical polishing of EMC-Si-Cu multi-heterointerfaces

Materials Chemistry and Physics, Год журнала: 2025, Номер unknown, С. 130509 - 130509

Опубликована: Фев. 1, 2025

Язык: Английский

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Recycling and Reuse of Rare Earth Polishing Powder Waste by a Simple Gravity Settling-Acid Leaching Process

Waste and Biomass Valorization, Год журнала: 2025, Номер unknown

Опубликована: Фев. 5, 2025

Язык: Английский

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Electric-field-modulated oxidation and its effect on photoelectrochemical mechanical polishing of 4H-SiC

International Journal of Mechanical Sciences, Год журнала: 2025, Номер unknown, С. 110247 - 110247

Опубликована: Апрель 1, 2025

Язык: Английский

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Effect of Voltage on Electrochemical Mechanical Polishing (ECMP) of 4H-SiC with Fixed Abrasives

Journal of Materials Research and Technology, Год журнала: 2025, Номер unknown

Опубликована: Май 1, 2025

Язык: Английский

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Simulation and Experimental Study of Tool Passivation Based on Magnetic Elastic Abrasive Particles

Tribology International, Год журнала: 2024, Номер 201, С. 110234 - 110234

Опубликована: Сен. 11, 2024

Язык: Английский

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Development of Ce/Cu co-doped dendritic mesoporous silica nanoparticles (DMSNs) as novel abrasive systems toward high-performance chemical mechanical polishing

Ceramics International, Год журнала: 2024, Номер 50(18), С. 33235 - 33250

Опубликована: Июнь 12, 2024

Язык: Английский

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Oxidation anisotropy of 4H-SiC wafers during chemical-mechanical polishing

Materials Science in Semiconductor Processing, Год журнала: 2024, Номер 185, С. 109014 - 109014

Опубликована: Окт. 17, 2024

Язык: Английский

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Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

Scientific Reports, Год журнала: 2024, Номер 14(1)

Опубликована: Окт. 30, 2024

Язык: Английский

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Research progress of low-temperature plasma polishing technology in chip material processing

Clean Energy Science and Technology, Год журнала: 2024, Номер 2(4), С. 263 - 263

Опубликована: Ноя. 21, 2024

Low-temperature plasma polishing technology, by virtue of the plasma’s highly ionized characteristics, can accurately remove tiny defects and impurities on surface chip materials, improve flatness finish reduce mechanical damage subsurface damage, has a high material removal rate. This paper reviews application status, advantages limitations technologies in field processing. The principles applications plasma-assisted polishing, chemical vaporization machining, electrolytic processing-mechanical assisted selective etching are specifically discussed, their analyzed. Finally, development chip-polishing technology is prospected, aiming to provide useful reference for continuous improvement manufacturing processes future microelectronics industry.

Язык: Английский

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低温等离子体抛光技术在芯片材料加工中的研究进展

清洁能源科学与技术, Год журнала: 2024, Номер 2(4), С. 226 - 226

Опубликована: Ноя. 21, 2024

低温等离子体抛光技术利用其高度电离的特性，能够精确去除芯片材料表面的微小缺陷和杂质，提高芯片材料的平整度和光洁度，减少机械损伤和亚表面损伤，同时具有较高的材料去除率。本文综述了等离子体抛光技术在芯片材料加工领域的应用现状、优势及其局限性。具体探讨了等离子体辅助抛光（PAP）、等离子体化学气化加工（PCVM）、等离子体电解处理辅助抛光（PEP-MP）和等离子体选择刻蚀（PASE）等工艺技术的原理及应用，分析了其优势与局限性，最后对等离子体芯片抛光技术的发展进了展望，旨在为芯片制造工艺的持续改进和微电子产业的未来发展提供有益参考。

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