MXene‐Based Flexible Memory and Neuromorphic Devices

Small, Год журнала: 2025, Номер unknown

Опубликована: Янв. 31, 2025

As the age of Internet Things (IoTs) unfolds, along with rapid advancement artificial intelligence (AI), traditional von Neumann-based computing systems encounter significant challenges in handling vast amounts data storage and processing. Bioinspired neuromorphic strategies offer a promising solution, characterized by features in-memory computing, massively parallel processing, event-driven operations. Compared to rigid silicon-based devices, flexible devices are lightweight, thin, highly stretchable, garnering considerable attention. Among materials utilized these transition metal carbides/nitrides (MXenes) particularly noteworthy their excellent flexibility, exceptional conductivity, hydrophilicity, which confer remarkable properties upon devices. Herein, comprehensive discussion is provided on applications MXenes memory This review covers basic principles device structures common parameters emerging as well synthesis, functionalization methods, distinct MXenes. The remaining future opportunities relevant also presented. can serve valuable reference lay cornerstone for practical feasible implementation technologies.

Язык: Английский

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Well‐Defined Nanostructures: Concept, Impact and Perspective

Small, Год журнала: 2025, Номер unknown

Опубликована: Март 5, 2025

Well-defined nanostructures (WDNSs) represent a transformative frontier in nanotechnology, enabling precise control over material properties through nanoscale engineering. The connectivity of building blocks is increasingly critical defining the and applications WDNSs. Traditional dimensionality-based classifications provide foundational insights but overlook delicate influence architectures on functionality. This perspective introduces supplementary classification framework based modes, including discrete connections, serial 2.5D 3D interpenetrations. Each category defines specific structural configurations that decide spatial arrangement, interaction dynamics, functional integration components. establishes unique for understanding WDNSs, linking their design with diverse catalysis, energy storage, biomedicine, beyond. By regulating strategies emerging demands, WDNSs offer considerable opportunities designing multifunctional materials, providing foundation advancing nanotechnology addressing complex scientific societal challenges. Finally, advanced rational design, accurate synthesis, comprehensive deployment, sustainable development remain to bottlenecks development.

Язык: Английский

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A Full‐Quantum‐Dot Optoelectronic Memristor for In‐Sensor Reservoir Computing System with Integrated Functions

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Фев. 26, 2025

Abstract In‐sensor computing hardware with signal sensing and dynamic processing capabilities—inspired by the human sensory system—have attracted interest as rapid proliferation of data computation in era big data. Here, an in‐sensor reservoir (RC) system integrated functions sensing, preprocessing, RC a single device is developed, constructing full quantum dot optoelectronic memristor (FQDOM) based on ZnO QDs/CdSe QDs/ZnO QDs heterojunction. The shows nonlinear short‐term memory behavior response to both electrical stimuli optical signals covering spectra from ultraviolet red light. FQDOM can achieve color perception. sense varied types input signal, exhibiting multisensory fusion capability fashion‐MNIST classification. More importantly, these proposed FQDOMs preprocess then send for sensor, which effectively reduces bit error rate systems. temporal further demonstrated gesture perception recognition task, showing accuracy up 92.59%. This research provides effective way design advanced computational

Язык: Английский

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Mxenes for Wearable Multifunctional Sensing and Artificial Intelligence Devices

IntechOpen eBooks, Год журнала: 2025, Номер unknown

Опубликована: Март 28, 2025

The exponential growth of artificial intelligence (AI) has led to an escalating demand for energy-efficient, data-intensive computing solutions. Conventional von Neumann architectures, constrained by inherent memory-processor bottlenecks, struggle meet these requirements. Neuromorphic devices enable scalable, and high-speed neuromorphic computing, potentially addressing the bottleneck limits Moore’s Law. Two-dimensional MXene materials, with their excellent mechanical electrical properties, have become a transformative platform developing devices, providing unparalleled advantages in sensing, nonvolatile memory, bio-inspired computation. This chapter systematically summarizes recent advances MXene-based flexible memristor devices. First, we delineate materials engineering strategies synthesizing thin films tailored electronic properties. Next, classify MXene-derived elucidate switching mechanisms, including ion migration charge trapping. A critical analysis MXene-enabled highlights breakthroughs in-memory, synapses, circuits, multimodal in-sensor computing. Finally, discuss persistent challenges stability, scalability, interfacial engineering, while projecting future directions MXene-integrated sensing-memory-processing systems. provides potential pathway leveraging MXenes transcend limitations conventional paradigms.

Язык: Английский

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An Optically Modulated Hydrogel Synapse for Multilevel Information Decryption

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 30, 2025

Abstract The increasing significance of data security promotes the development multilevel information encryption and decryption techniques. However, realization logical outputs modulated by multiple stimuli is challenging in design advanced functional materials. Herein, a system with combination visual digital that responds to dual‐optical inputs developed based on hydrogel‐based synaptic device. ammonium molybdate nanoparticles calcium alginate supramolecular networks incorporated into polyacrylamide hydrogel enable optically regulated color change ionic conductivity. Under UV irradiation, reduction allows as outputs. Meanwhile, conductivity can be near‐infrared (NIR) optical pulses emulate plasticity biological synapses, producing NIR‐mediated As demonstration, strategy provided using array combines decoding camouflage. Moreover, short‐term synapse endows time‐dependent decryption, which improves reduces risk leakage. This study contributes advancing systems providing an effective technique for integrating

Язык: Английский

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Chelated Tin Halide Perovskite for Near-Infrared Neuromorphic Imaging Array Enabling Object Recognition and Motion Perception

Research Square (Research Square), Год журнала: 2025, Номер unknown

Опубликована: Янв. 6, 2025

Novel neuromorphic imaging arrays integrate photonic perception, memory, and process capability, enabling intelligent with efficient spatial temporal data fusion for object recognition, enhancement, motion perception in autonomous vehicles surveillance systems, surpassing the limitations of conventional charge-coupled device (CCD) complementary metal oxide semiconductor (CMOS) image sensors. Halide perovskites hold significant promise due to their capacity simultaneously manipulate photogenerated ions electronic charges, thereby facilitating development sophisticated systems based on intrinsic material dynamics. However, limited response range (ultraviolet-visible spectrum) toxic nature lead remain unresolved perovskite-based applications. Here, we present lead-free non-toxic CH(NH₂)₂SnI₃ (FASnI₃) low-toxicity components, excellent optoelectronic properties, superior near-infrared by multi-site chelate effect bio-friendly quercetin (QR) molecules. Coupled mechanism non-equilibrium carrier strategy, (NIR) synapse FASnI₃-QR perovskite films exhibited key synaptic characteristics practical applications, including quasi-linear time-dependent photocurrent generation, prolonged decay, low energy consumption. Ultimately, 12×12 real-time NIR array was successfully constructed thin-film transistor (TFT) backplanes through heterogeneous integration devices Si circuits, which enables spatiotemporal information complex environments at hardware level.

Язык: Английский

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Overview of emerging electronics technologies for artificial intelligence: A review

Materials Today Electronics, Год журнала: 2025, Номер unknown, С. 100136 - 100136

Опубликована: Янв. 1, 2025

Язык: Английский

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Light‐Induced Radix Modulation and Optoelectronic Synaptic Properties in Ternary‐Logic Devices

Small Structures, Год журнала: 2025, Номер unknown

Опубликована: Фев. 11, 2025

Multivalued logic (MVL) devices overcome the limitations of binary computing. However, their complex structures and complementary metal–oxide semiconductor (CMOS) incompatibility pose considerable challenges. Herein, a streamlined MVL device has been developed using transistor with an oxide channel dual‐gate dielectric, eliminating need for barrier junction in layer. This new supports three states (OFF, intermediate, ON) through Fowler–Nordheim tunneling between gate source. It exhibits optoelectronic synaptic properties by leveraging photoresponse its constituent TiO 2 charge trapping at dielectric/channel interface, achieving optical potentiation 128 multistates linearity 0.94. Additionally, can switch ternary binary‐logic within specific wavelength range. The proposed approach is practical solution to integrating state switching functions single device, potential application advanced technologies.

Язык: Английский

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Biocompatible Neuromorphic Device Array Based on Naturally Sourced Mucin for Implantable Bioelectronics

ACS Nano, Год журнала: 2025, Номер unknown

Опубликована: Март 6, 2025

Although the demand for intelligent implantable bioelectronics is steadily increasing, their progress hindered by limited availability of materials with sufficient biocompatibility implantation. Herein, we propose a neuromorphic device human brain-inspired biomimetic functionality utilizing naturally sourced mucin as active layer material. The mucin-based memristor (MNM) array successfully mimics key synaptic behaviors uniformly, including paired-pulse facilitation index 122.65%, transition from short-term to long-term memory, potentiation, and depression. In addition effect defect-rich layer, these are enhanced presence MgOx interfacial formed at its interface Mg top electrode. cell cytotoxicity test results demonstrate superior MNM array, which shows relative viability 108.46% after 72 h culture. Moreover, artificial neural network simulation demonstrates recognition rate 89.93% 125 training epochs, suggests that materials, mucin, can be used in advanced medical healthcare applications.

Язык: Английский

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Chelated Tin Halide Perovskite for Near-Infrared Neuromorphic Imaging Array Enabling Object Recognition and Motion Perception in Complex Environments

Опубликована: Апрель 4, 2025

Novel neuromorphic imaging arrays integrate photonic perception, memory, and process capability, enabling intelligent with efficient spatial temporal data fusion for object recognition, enhancement, motion perception in autonomous vehicles surveillance systems, surpassing the limitations of conventional charge-coupled device (CCD) complementary metal oxide semiconductor (CMOS) image sensors. Halide perovskites hold significant promise due to their capacity simultaneously manipulate photogenerated ions electronic charges, thereby facilitating development sophisticated systems based on intrinsic material dynamics. However, limited response range (ultraviolet-visible spectrum) toxic nature lead remain unresolved perovskite-based applications. Here, we present lead-free non-toxic CH(NH₂)₂SnI₃ (FASnI₃) low-toxicity components, excellent optoelectronic properties, superior near-infrared by multi-site chelate effect bio-friendly quercetin (QR) molecules. Coupled mechanism non-equilibrium carrier strategy, (NIR) synapse FASnI₃-QR perovskite films exhibited key synaptic characteristics practical applications, including quasi-linear time-dependent photocurrent generation, prolonged decay, low energy consumption. Ultimately, 12×12 real-time NIR array was successfully constructed thin-film transistor (TFT) backplanes through heterogeneous integration devices Si circuits, which enables spatiotemporal information complex environments at hardware level.

Язык: Английский

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