2D/Organic Photovoltage Field‐Effect Transistors DOI
Jiayue Han,

Tao Tuo,

Wenjie Deng

и другие.

Laser & Photonics Review, Год журнала: 2025, Номер unknown

Опубликована: Апрель 23, 2025

Abstract Detectors typically face a trade‐off between achieving high responsivity and high‐speed performance. Balancing these characteristics remains challenge. Developing broadband infrared detection that achieves while maintaining operation at room temperature is key objective for the next generation of sensing technologies. In this work, novel 2D/organic hybrid photogating field‐effect transistor (PVFET) capable spanning 488–1550 nm reported. This device simultaneously enhances both gain response speed, remarkable gain‐bandwidth product 1.18 × 10 , thereby overcoming conventional speed. Through comprehensive analysis device's physical dynamics, correlation PVFET performance, incident wavelength, Fermi level demonstrated. Notably, operates an exceptionally low power consumption 0.25 µW cm 2 . Building on superior characteristics, it further showcase potential in communication applications. The proposed provides promising reference development next‐generation high‐speed, high‐sensitivity photodetectors.

Язык: Английский

Advancements in photoelectrochemical sensors for analysis of food contaminants DOI

Kexin Zou,

Shumin Zhang, Quansheng Chen

и другие.

Trends in Food Science & Technology, Год журнала: 2025, Номер 157, С. 104903 - 104903

Опубликована: Фев. 6, 2025

Язык: Английский

Процитировано

2
Underlying Dynamics of Double-Halide Perovskites: Unraveling Structural Complexity, Bandgap Modulation, Optical, and Carrier Dynamics for Next-Generation Optoelectronics DOI Creative Commons
Noolu Srinivasa Manikanta Viswanath, Won Bin Im

ACS Applied Optical Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 9, 2025

Язык: Английский

Процитировано

1
Spectra-Orthogonal Optical Anisotropy in Wafer-Scale Molecular Crystal Monolayers DOI
Tomojit Chowdhury, Fauzia Mujid,

Zehra Naqvi

и другие.

Nano Letters, Год журнала: 2025, Номер unknown

Опубликована: Март 25, 2025

Controlling the spectral and polarization response of two-dimensional (2D) crystals is vital for developing ultrathin platforms compact optoelectronic devices. However, independently tuning optical anisotropy remains challenging in conventional semiconductors due to intertwined nature their lattice electronic structures. Here, we report spectra-orthogonal anisotropy─where tuned response─in wafer-scale, one-atom-thick 2D molecular crystal (2DMC) monolayers synthesized on monolayer transition-metal dichalcogenide (TMD) crystals. Utilizing concomitant consistency structural tunability perylene derivatives, demonstrate tunable 2DMCs with similar profiles, as confirmed by room-temperature scanning tunneling microscopy cross-polarized reflectance microscopy. Additional angle-dependent analysis single-crystal polycrystalline domains reveals an epitaxial relationship between 2DMC TMD. Our results establish a scalable, molecule-based crystalline platform unique functionalities unattainable covalent solids.

Язык: Английский

Процитировано

0
Hole and Electron Mobility in Sulfur- and BN-Functionalized Perylene Diimides: A Computational Study DOI
Sanjukta Parida, Sanjib K. Patra, Sabyashachi Mishra

и другие.

The Journal of Physical Chemistry C, Год журнала: 2025, Номер unknown

Опубликована: Апрель 17, 2025

Язык: Английский

Процитировано

0
2D/Organic Photovoltage Field‐Effect Transistors DOI
Jiayue Han,

Tao Tuo,

Wenjie Deng

и другие.

Laser & Photonics Review, Год журнала: 2025, Номер unknown

Опубликована: Апрель 23, 2025

Abstract Detectors typically face a trade‐off between achieving high responsivity and high‐speed performance. Balancing these characteristics remains challenge. Developing broadband infrared detection that achieves while maintaining operation at room temperature is key objective for the next generation of sensing technologies. In this work, novel 2D/organic hybrid photogating field‐effect transistor (PVFET) capable spanning 488–1550 nm reported. This device simultaneously enhances both gain response speed, remarkable gain‐bandwidth product 1.18 × 10 , thereby overcoming conventional speed. Through comprehensive analysis device's physical dynamics, correlation PVFET performance, incident wavelength, Fermi level demonstrated. Notably, operates an exceptionally low power consumption 0.25 µW cm 2 . Building on superior characteristics, it further showcase potential in communication applications. The proposed provides promising reference development next‐generation high‐speed, high‐sensitivity photodetectors.

Язык: Английский

Процитировано

0