X-ray-induced scintillation properties of CsI:Ho single crystals

Radiation Measurements, Год журнала: 2025, Номер unknown, С. 107402 - 107402

Опубликована: Фев. 1, 2025

Язык: Английский

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Structural rigidity control toward Cr3+-based broadband near-infrared luminescence with enhanced thermal stability and luminescent intensity

Journal of Alloys and Compounds, Год журнала: 2025, Номер unknown, С. 179551 - 179551

Опубликована: Март 1, 2025

Язык: Английский

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Broadband and high internal quantum efficiency near-infrared phosphors obtained utilizing a chemical unit co-substitution strategy for plant lighting

Journal of Materials Chemistry C, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

Near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) have been widely used in plant cultivation.

Язык: Английский

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A novel high-efficiency near-infrared phosphor Mg_0.9Ta₂Zn_2.1O₈:Cr³⁺,Yb³⁺ for spectroscopy applications

Journal of Materials Chemistry C, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

Introducing Yb 3+ into Mg 0.9 Ta 2 Zn 2.1 O 8 :Cr adjusts the FWHM, increases EQE, and enhances luminous intensity thermal stability. A NIR pc-LED using a 465 nm chip MTZO:Cr ,Yb phosphor is applied in multifunctional optical applications.

Язык: Английский

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Achieving tunable ultra-broadband NIR emission originating from the two-site occupation of Cr³⁺ ions in Mg₃Ga₂SnO₈:Cr³⁺

Inorganic Chemistry Frontiers, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

The ultra-broadband emission spectrum of Mg 3 Ga 2 SnO 8 :Cr 3+ phosphor possesses excellent tunable properties. peak and full width at half maximum can be continuously regulating by adjusting the concentration Cr ions.

Язык: Английский

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Near-Infrared Phosphor Zn₂InGaO₅:Cr³⁺ with a Wide Bandgap Applicable for Light Sources at Low Temperature

ACS Applied Optical Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 26, 2025

Differing from traditional near-infrared (NIR) light sources that are made thermal radiation of a blackbody or filtered gas discharge, the technique by converting blue emission light-emitting diode (LED) chips into NIR provides solution. For this purpose, phosphor should be developed at first. In work, we report Zn2InGaO5:Cr3+, synthesized 1450 °C for 5 h in air ambient, applicable LED application low temperature no higher than 200 K. The Zn2In0.98Cr0.02GaO5 and Zn2InGaO5 host have direct band gap about 3.00 3.03 eV, respectively, belong to class bandgap semiconductors. Excited 471 nm room temperature, gives ultrabroadband emission, peaked 826 with full width half-maximum (FWHM) 192 nm, region 700–1100 nm. luminescence intensity increases as 10 K, maximizes then decreases further, showing an anomalous temperature-quenching effect. Meanwhile, peak blue-shifts continuously 779 output power pc-LED device packaged using Zn2InGaO5:Cr3+ driven under current 100 mA is 5.14 mW, which photoelectric conversion efficiency 1.9%.

Язык: Английский

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X-Ray-Induced Scintillation Properties of Csi:Ho Single Crystals

Опубликована: Янв. 1, 2024

Язык: Английский

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