Trivalent Rare Earth Ion‐Doped Metal Halide Perovskite Near‐Infrared Semiconductors for High‐Performance Optoelectronic Devices DOI Open Access
Tao Yang,

Yakun Wang,

Liang‐Sheng Liao

и другие.

Advanced Functional Materials, Год журнала: 2024, Номер unknown

Опубликована: Дек. 17, 2024

Abstract Given the extensive application of near‐infrared (NIR) emission, quest for efficient and versatile NIR semiconductors have attracted tremendous attention. Leveraging trivalent rare earth (RE 3+ ) ions doping, integration metal halide perovskites with RE makes it easy to achieve NIR‐II emission (1000–1700 nm). However, although showing promise in bioimaging, optical communication, night vision, enhancing intensity promote further progress real‐world applications remains a challenge. This review summarizes recent advancements ion‐doped perovskite semiconductors, discusses what kind properties are needed how desired various applications. The starts synthesis methods material types rich examples. Following this, mechanisms strategies optimizing luminescence performance discussed detail. Furthermore, highlights their multifunctional both as an electrically driven emitter light‐emitting diodes (LEDs) down‐conversion photovoltaic devices (PVs) or phosphor‐converted LEDs (pc‐LEDs). Finally, insights on fill gap between current research future goals provided. aims provide deeper understanding materials, exploration emitters.

Язык: Английский

Trivalent Rare Earth Ion‐Doped Metal Halide Perovskite Near‐Infrared Semiconductors for High‐Performance Optoelectronic Devices DOI Open Access
Tao Yang,

Yakun Wang,

Liang‐Sheng Liao

и другие.

Advanced Functional Materials, Год журнала: 2024, Номер unknown

Опубликована: Дек. 17, 2024

Abstract Given the extensive application of near‐infrared (NIR) emission, quest for efficient and versatile NIR semiconductors have attracted tremendous attention. Leveraging trivalent rare earth (RE 3+ ) ions doping, integration metal halide perovskites with RE makes it easy to achieve NIR‐II emission (1000–1700 nm). However, although showing promise in bioimaging, optical communication, night vision, enhancing intensity promote further progress real‐world applications remains a challenge. This review summarizes recent advancements ion‐doped perovskite semiconductors, discusses what kind properties are needed how desired various applications. The starts synthesis methods material types rich examples. Following this, mechanisms strategies optimizing luminescence performance discussed detail. Furthermore, highlights their multifunctional both as an electrically driven emitter light‐emitting diodes (LEDs) down‐conversion photovoltaic devices (PVs) or phosphor‐converted LEDs (pc‐LEDs). Finally, insights on fill gap between current research future goals provided. aims provide deeper understanding materials, exploration emitters.

Язык: Английский

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