n‑Type Polymer Thermoelectric Materials Based on Benzodifurandione and F‐Substituted Thiophene Derivatives Synthesized via Direct Arylation and Aldol Polycondensation DOI

Ruoqi Gao,

Yuqi Guo, Chenhui Xu

и другие.

Macromolecular Chemistry and Physics, Год журнала: 2025, Номер unknown

Опубликована: Май 7, 2025

Abstract The preparation of n‐type conjugated polymers (CPs) with low‐lying lowest unoccupied molecular orbital (LUMO) energy levels is crucial for developing organic electronics. However, limited strategies have been demonstrated to significantly lower the LUMO CPs. Herein, BDOPV incorporated strong electron affinity as acceptor unit and F‐substituted thiophene derivatives 4F2T 4FTVT donor into polymer chain, two CPs PB4F2T PB4FTVT are synthesized via an atom‐economic direct arylation monomer‐aldol polycondensation procedure. display below −4.0 eV enable unipolar charge transport characteristics in thin‐film transistors (OTFTs) facilitate efficient n‐doping by N ‐DMBI thermoelectric devices (OTEs). OTEs fabricated using enhanced performance, a conductivity (σ) 0.90 S cm⁻¹ power factor (PF) reaching up 0.50 µW m⁻¹ K⁻ 2 . This work enriches pool semiconductors combining withdrawing fluorinated comonomer effective synthetic protocol.

Язык: Английский

Recent developments in polymer semiconductors with excellent electron transport performances DOI
Yunchao Zhang, Weifeng Zhang, Zhihui Chen

и другие.

Chemical Society Reviews, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

This review describes the design considerations, bonding modes between monomers, structural modification strategies, and applications of polymer semiconductors with excellent electron transport performances.

Язык: Английский

Процитировано

2

Charge Polarity Modulation and Efficient Electron Transport in Quinoid–Donor–Acceptor Polymers by Acceptor Engineering for High-Performance Transistors DOI

Hao Chen,

Runze Xie,

Junwang Tang

и другие.

Macromolecules, Год журнала: 2025, Номер unknown

Опубликована: Янв. 8, 2025

Fine-tuning the charge polarity and enhancing electron transport in conjugated polymers are critical for developing high-performance organic field-effect transistors (OFETs). Quinoidal polymers, characterized by planar backbones deep-lying lowest unoccupied molecular orbital (LUMO) energy levels, offer distinct advantages over their aromatic counterparts but face challenges achieving reliable mobilities exceeding 1 cm2 V–1 s–1. Herein, we synthesized a set of novel quinoid–donor–acceptor (Q-D-A) with various acceptor units. Increasing strength narrowed band gap, lowered LUMO shifted from unipolar p-type to ambipolar ultimately dominant n-type behavior. The electron-to-hole mobility ratio increased 0 40 behavior observed Q-D-A polymer first time. Consequently, strongest acceptor-based exhibited backbone, small effective mass, high crystallinity, low disorder, resulting 1.20 s–1 decent operational stability. This is record-high value quinoidal transport. Our findings viable strategy tuning improving providing insights into structure–property relationships essential advancing electronics.

Язык: Английский

Процитировано

1

n‑Type Polymer Thermoelectric Materials Based on Benzodifurandione and F‐Substituted Thiophene Derivatives Synthesized via Direct Arylation and Aldol Polycondensation DOI

Ruoqi Gao,

Yuqi Guo, Chenhui Xu

и другие.

Macromolecular Chemistry and Physics, Год журнала: 2025, Номер unknown

Опубликована: Май 7, 2025

Abstract The preparation of n‐type conjugated polymers (CPs) with low‐lying lowest unoccupied molecular orbital (LUMO) energy levels is crucial for developing organic electronics. However, limited strategies have been demonstrated to significantly lower the LUMO CPs. Herein, BDOPV incorporated strong electron affinity as acceptor unit and F‐substituted thiophene derivatives 4F2T 4FTVT donor into polymer chain, two CPs PB4F2T PB4FTVT are synthesized via an atom‐economic direct arylation monomer‐aldol polycondensation procedure. display below −4.0 eV enable unipolar charge transport characteristics in thin‐film transistors (OTFTs) facilitate efficient n‐doping by N ‐DMBI thermoelectric devices (OTEs). OTEs fabricated using enhanced performance, a conductivity (σ) 0.90 S cm⁻¹ power factor (PF) reaching up 0.50 µW m⁻¹ K⁻ 2 . This work enriches pool semiconductors combining withdrawing fluorinated comonomer effective synthetic protocol.

Язык: Английский

Процитировано

0