Bidirectionally Photoresponsive Optoelectronic Transistors with Dual Photogates for All‐Optical‐Configured Neuromorphic Vision

Advanced Functional Materials, Год журнала: 2023, Номер 33(42)

Опубликована: Июнь 19, 2023

Abstract Bio‐inspired neuromorphic vision sensors, integrating optical sensing, and processing functions have attracted significant attention for developing future low‐power high‐efficiency imaging systems. However, the compulsory electrical signal modulation to achieve inhibitory behaviors in most reported sensors results additional hardware computational latency. Herein, bidirectional photoresponsive optoelectronic synapses based on In 2 O 3 /Al /Y6 phototransistors are achieved, realizing all‐optical‐configured synaptic weight updates enabled by dual photogates. The excitatory photoresponses originate from photogating effects provided trapped photogenerated electrons Al under near‐infrared light ionized oxygen vacancies ultra‐violet light, respectively. phototransistor illustrates outstanding characteristics with low nonlinearity asymmetry, demonstrating high efficiencies both preprocessing postprocessing tasks, such as noise reduction, contrast enhancement, pattern recognition. proposed dual‐photogate provide effective strategies construct in‐sensor computing

Язык: Английский

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Photogating Effect-Driven Photodetectors and Their Emerging Applications

Nanomaterials, Год журнала: 2023, Номер 13(5), С. 882 - 882

Опубликована: Фев. 26, 2023

Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, photogating effect enables us to detect sub-bandgap rays. The is caused trapped photo-induced charges that modulate potential energy of semiconductor/dielectric interface, where these contribute an additional electrical gating-field, resulting in shift threshold voltage. This approach clearly separates drain current dark versus bright exposures. In this review, we discuss effect-driven photodetectors with respect emerging optoelectrical materials, device structures, and mechanisms. Representative examples reported effect-based photodetection are revisited. Furthermore, applications using effects highlighted. challenging aspects next-generation photodetector devices presented emphasis on effect.

Язык: Английский

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Demonstration of a 3D-Assembled Dual-Mode Photodetector Based on Tubular Graphene/III–V Semiconductors Heterostructure and Coplanar Three Electrodes

ACS Nano, Год журнала: 2024, Номер 18(23), С. 14978 - 14988

Опубликована: Май 28, 2024

3D assembly technology is a cutting-edge methodology for constructing high-performance and multifunctional photodetectors since some attractive photodetection features such as light trapping effect, omnidirectional ability, high spatial resolution can be introduced. However, there has not been any report of 3D-assembled multimode owing to the lack design fabrication guideline electrodes serving heterostructures. In this study, dual-mode photodetector (3DdmPD) was realized successfully via clever electrical contact between rolled-up tubular graphene/GaAs/InGaAs heterostructure planar metal electrode. Arbitrary switching three coplanar makes as-fabricated work at unbiased photodiode mode, which suitable energy conservation high-speed photodetection, or biased photoconductive favors extremely weak fully showing advantages detection. more detail,

Язык: Английский

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Efficient Shortwave Infrared Photodetection Through Polymer:Cocrystal Blend Film‐Based Field‐Effect Transistors

Advanced Optical Materials, Год журнала: 2025, Номер unknown

Опубликована: Янв. 30, 2025

Abstract Short‐wave infrared (SWIR) organic photodetectors (OPDs) offer flexibility, cost‐effectiveness, and tunable properties that differentiate them from commercially inorganic SWIR photodetectors. These detectors mainly rely on materials possessing absorption properties. However, the synthesis of new semiconductor with narrow band gaps remains a significant challenge. Here an effective general strategy blending TMBP‐F 4 TCNQ (TMF4) cocrystal PDVT‐10 polymer as SWIR‐absorbing for photoelectronic detection is reported. As prepared field‐effect transistor (FET) device Si/SiO 2 /PDVT‐10:TMF4 (PTF)/Au configuration presents hole mobility up to 1.70 cm V −1 s spectral response range 1000–1700 nm. Surprisingly, remarkable photoresponsivity (R, 801 A W ) detectivity (D*, 1.6 × 10 13 Jones) are obtained at 1060 The PTF film exhibits high surface potential 180 mV, ultrafast transfer within 150 fs when exposed 1350 nm pump laser. existence mobile electrons in TMF4 photogeneration additional carriers upon illumination may create (photo)doping effect allows higher concentration PDVT‐10. Significantly, this enhances detection, therefore showing great prospects field imaging.

Язык: Английский

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Solution-Processed Organic–Inorganic Semiconductor Heterostructures for Advanced Hybrid Phototransistors

ACS Applied Electronic Materials, Год журнала: 2023, Номер 5(2), С. 578 - 592

Опубликована: Янв. 18, 2023

Organic/inorganic hybrid phototransistors are an emerging class of advanced optoelectronic devices. The separated organic high absorption layer and inorganic carrier transport endow with remarkable sensing performance in a broad spectrum. flexibility, ambient stability, process compatibility metal oxide semiconductors also render them promising for large-area matrix integration wearable applications. Moreover, extraordinary photoelectric behaviors, such as bidirectional photoresponses the versatility in-sensor computing functions, including feature extraction image enhancement, can be obtained by rational customization heterojunctions. In this Spotlight on Applications, we review recent progress organic/inorganic their applications photodetection, sensor arrays, flexible electronics, computing.

Язык: Английский

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Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Advanced Sensor Research, Год журнала: 2023, Номер 2(8)

Опубликована: Март 3, 2023

Abstract It is vital to acquire real‐time pH signals with high resolution as variation can reflect important information regarding health status and physiological environment. Field‐effect transistor (FET)‐based biosensors (bio‐FETs), a kind of potentiometric sensor, are being rapidly developed for detection due their advantages sensitivity, low temperature dependence, portability. More importantly, the scalability bio‐FETs renders them applicable achieving spatial in sensing. In this review paper, design, operation principle, critical characteristics FET‐based sensor introduced. Then, recent progress mapping FET arrays, including static array where pixel directly addressed by wiring, active‐matrix accessed additional switching FETs, presented. Last, typical examples arrays biomedical applications, such monitoring DNA sequencing elongation

Язык: Английский

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Infrared Light Detection Technology Based on Organics

ACS Applied Electronic Materials, Год журнала: 2023, Номер 5(1), С. 21 - 33

Опубликована: Янв. 5, 2023

This decade has seen rapid developments in infrared light sensing and imaging, utilizing innovative materials deliberate structural designs. Organic semiconducting are promising the next-generation applications due to their unique properties including solution processability, tunable optoelectronic property, biocompatibility. Spotlight aims provide a snapshot of recent advances organic detection technology, specifically for wavelengths beyond 1000 nm, focusing on performance enhancements new function realizations. Several proof-of-concept demonstrations illustrate benefits rapidly developing technology. Finally, we discuss challenges perspectives

Язык: Английский

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Harness Background Lighting for Separability Enhancement in Optical Sensing Reservoir for Temporal Signal Processing Utilizing Amorphous IGZO Neuromorphic Transistors

ACS Photonics, Год журнала: 2024, Номер 11(2), С. 660 - 672

Опубликована: Фев. 6, 2024

By drawing inspiration from the human visual system, utilizing optoelectronic devices for processing temporal and unstructured data within an in-sensor reservoir (RC) has gained increasing attention in field of advanced machine vision systems. Despite advancements integration optical sensors with RC architecture, challenge enhancing output state separability better performance remains. In this study, we present a transistor based on amorphous indium–gallium–zinc oxide (IGZO, film stoichiometry In:Ga:Zn:O = 1:1:0.8:3.4) ZrOx dielectric layer. leveraging migratory properties oxygen vacancies through electrical stimulation, proposed IGZO demonstrated potentiation/depression cycles low variation achieved 90% accuracy pattern recognition simulation, indicating its potential as readout layer Furthermore, by inherent light-responsive short-term memory behavior induced stimuli, can effectively extract distinct states 4-bit signals. Notably, incorporation additional background light (890 635 nm) amplifies distinctiveness these extracted states. The current difference between maximum minimum is 0.76 nA without light, while it extended to 1.4 890 nm 2.27 light. This enhancement makes substantial contribution architecture. effectiveness our signals architecture highlights advancing neuromorphic applications state-of-the-art

Язык: Английский

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Organic Synaptic Transistors with Environmentally Friendly Core/Shell Quantum Dots for Wavelength-Selective Memory and Neuromorphic Functions

Nano Letters, Год журнала: 2024, Номер 24(20), С. 6139 - 6147

Опубликована: Май 9, 2024

Organic transistors based on organic semiconductors together with quantum dots (QDs) are attracting more and interest because both materials have excellent optoelectronic properties solution processability. Electronics nontoxic QDs highly desired considering the potential health risks but limited by elevated surface defects, inadequate stability, diminished luminescent efficiency. Herein, synaptic environmentally friendly ZnSe/ZnS core/shell passivating defects developed, exhibiting optically programmable electrically erasable characteristics. The feature linear multibit storage capability wavelength-selective memory function a retention time above 6000 s. Various neuromorphic applications, including enhancement, optical communication, consolidation behaviors, simulated. Utilizing an established model, accuracies of 92% 91% achieved in pattern recognition complicated electrocardiogram signal processing, respectively. This research highlights applications monitoring.

Язык: Английский

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An Active‐Matrix Synaptic Phototransistor Array for In‐Sensor Spectral Processing

Advanced Science, Год журнала: 2024, Номер 11(39)

Опубликована: Авг. 21, 2024

Abstract The human retina perceives and preprocesses the spectral information of incident light, enabling fast image recognition efficient chromatic adaptation. In comparison, it is reluctant to implement parallel preprocessing temporal fusion in current complementary metal‐oxide‐semiconductor (CMOS) sensors, requiring intricate circuitry, frequent data transmission, color filters. Herein, an active‐matrix synaptic phototransistor array (AMSPA) developed based on organic/inorganic semiconductor heterostructures. AMSPA provides wavelength‐dependent, bidirectional photoresponses, dynamic imaging in‐sensor functions. Specifically, near‐infrared light induces inhibitory photoresponse while UV results exhibitory photoresponse. With rational structural design hybrid heterostructures, range improved over 90 dB. Finally, a 32 × 64 (128 pixels per inch) demonstrated with one‐switch‐transistor one‐synaptic (1‐T‐1‐PT) structure, achieving spatial enhancement trajectory imaging. These reveal feasibility for constructing artificial vision systems.

Язык: Английский

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