Largely enhanced bulk photovoltaic effects in a two-dimensional MoSi2N4 monolayer photodetector by vacancy-doping and bending-increased device asymmetry DOI
Tingting Duan, Yongsheng Yao, Juexian Cao

и другие.

Journal of Materials Chemistry C, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

Two-dimensional MoSi 2 N 4 monolayer semiconductors have garnered significant research attention for ultraviolet (UV) photodetection due to their outstanding performance, including ultrafast response, high responsivity, and low dark current.

Язык: Английский

Largely enhanced bulk photovoltaic effects in a two-dimensional MoSi2N4 monolayer photodetector by vacancy-doping and bending-increased device asymmetry DOI
Tingting Duan, Yongsheng Yao, Juexian Cao

и другие.

Journal of Materials Chemistry C, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

Two-dimensional MoSi 2 N 4 monolayer semiconductors have garnered significant research attention for ultraviolet (UV) photodetection due to their outstanding performance, including ultrafast response, high responsivity, and low dark current.

Язык: Английский

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