Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics

Nano-Micro Letters, Год журнала: 2021, Номер 13(1)

Опубликована: Июнь 14, 2021

Abstract The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe 2 ) with a novel pentagonal structure unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous progress achieved regarding the physics, chemistry, electronics PdSe . Accordingly, in this review, we recapitulate summarize most recent on , including its structure, properties, synthesis, applications. First, mechanical exfoliation method obtain nanosheets is introduced, large-area synthesis strategies are explained respect chemical vapor deposition metal selenization. Next, electronic optoelectronic properties related heterostructures, such as field-effect transistors, photodetectors, sensors, thermoelectric devices, discussed. Subsequently, integration systems into infrared image sensors basis van der Waals heterostructures explored. Finally, future opportunities highlighted serve general guide for physicists, chemists, materials scientists, engineers. Therefore, comprehensive review may shed light conducted by 2D material community.

Язык: Английский

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PdSe2/MoSe2 vertical heterojunction for self-powered photodetector with high performance

Nano Research, Год журнала: 2021, Номер 15(3), С. 2489 - 2496

Опубликована: Авг. 10, 2021

Язык: Английский

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Fast Photothermoelectric Response in CVD‐Grown PdSe₂ Photodetectors with In‐Plane Anisotropy

Advanced Functional Materials, Год журнала: 2021, Номер 31(40)

Опубликована: Июль 11, 2021

Abstract PdSe 2 , a star photosensitive functional material, has been successfully used in photodetectors based on sensing mechanisms of photogating, photoconductive, and photovoltaic effects. Here, photothermoelectric (PTE) effect is observed flakes grown by chemical vapor deposition. The unique photoresponse arises from an electron temperature gradient instead electron–hole separation. Direct evidence the PTE confirmed nonlocal under zero bias. Moreover, photodetector shows high performance terms ultrafast response speed (4 µs), air‐stability, broadband spectrum photodetection, reasonable responsivity, anisotropic optical response. This study paves new way for developing high‐performance layered materials.

Язык: Английский

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High-performance polarization-sensitive photodetector based on a few-layered PdSe2 nanosheet

Nano Research, Год журнала: 2020, Номер 13(6), С. 1780 - 1786

Опубликована: Апрель 30, 2020

Язык: Английский

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Cross‐Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate

Advanced Materials, Год журнала: 2021, Номер 33(22)

Опубликована: Апрель 19, 2021

Abstract Exploring 2D ultrawide bandgap semiconductors (UWBSs) will be conductive to the development of next‐generation nanodevices, such as deep‐ultraviolet photodetectors, single‐photon emitters, and high‐power flexible electronic devices. However, a gap still remains between theoretical prediction novel UWBSs experimental realization corresponding materials. The cross‐substitution process is an effective way construct with favorable parent characteristics (e.g., structure) better physicochemical properties bandgap). Herein, simple case offered for rational design syntheses UWBS GaPS 4 by employing state‐of‐the‐art GeS 2 similar structural model. Benefiting from cosubstitution Ge lighter Ga P, crystals exhibit sharply enlarged optical bandgaps (few‐layer: 3.94 eV monolayer: 4.50 eV) superior detection performances high responsivity (4.89 A W −1 ), detectivity (1.98 × 10 12 Jones), quantum efficiency (2.39 3 %) in solar‐blind ultraviolet region. Moreover, ‐based photodetector exhibits polarization‐sensitive photoresponse linear dichroic ratio 1.85 at 254 nm, benefitting its in‐plane anisotropy. These results provide pathway discovery fabrication anisotropic materials, which become promising candidates future sensors.

Язык: Английский

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Moiré superlattices and related moiré excitons in twisted van der Waals heterostructures

Chemical Society Reviews, Год журнала: 2021, Номер 50(11), С. 6401 - 6422

Опубликована: Янв. 1, 2021

Recent advances in moiré superlattices and excitons, such as quantum emission arrays, low-energy flat bands, Mott insulators, have rapidly attracted attention the fields of optoelectronics, materials, energy research. The interlayer twist turns into a degree freedom that alters properties systems realization excitons also offers feasibility making artificial exciton crystals. Moreover, exhibit many exciting under regulation various external conditions, including spatial polarisation, alternating dipolar to moments gate-dependence gate voltage dependence; all are pertinent their applications nano-photonics information. But lag theoretical development low-efficiency processing technologies significantly limit potential superlattice applications. In this review, we systematically summarise discuss recent progress analyze current challenges, put forward relevant recommendations. There is no doubt further research will lead breakthroughs application promote reforms innovations traditional solid-state physics materials science.

Язык: Английский

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A broadband, self-powered, and polarization-sensitive PdSe₂ photodetector based on asymmetric van der Waals contacts

Nanophotonics, Год журнала: 2023, Номер 12(3), С. 607 - 618

Опубликована: Янв. 11, 2023

Abstract Self-powered photodetectors with broadband and polarization-sensitive photoresponse are desirable for many important applications such as wearable electronic devices wireless communication systems. Recently, two-dimensional (2D) materials have been demonstrated promising candidates self-powered owing to their advantages in light–matter interaction, transport, properties, so on. However, performance speed, response, multifunction is still limited. Here, we report a PdSe 2 photodetector asymmetric van der Waals (vdWs) contacts formed by using homojunction configuration. This device achieves high responsivity approaching 53 mA/W, rise/decay time of about 0.72 ms/0.24 ms, detectivity more than 5.17 × 10 11 Jones the visible-near infrared regime (532–1470 nm). In addition, linear response can be observed an anisotropy ratio 1.11 at 532 nm 1.62 1064 nm. Furthermore, strong anisotropic endows this outstanding polarization imaging capabilities, realizing contrast-enhanced degree imaging. Our proposed architecture great potential -based vdWs high-performance operating without any external bias.

Язык: Английский

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Polarization‐ and Gate‐Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure

Advanced Materials, Год журнала: 2023, Номер 36(6)

Опубликована: Сен. 28, 2023

Abstract Polarimetric photodetector can acquire higher resolution and more surface information of imaging targets in complex environments due to the identification light polarization. To date, existing technologies yet sustain poor polarization sensitivity (<10), far from market application requirement. Here, photovoltaic detectors with polarization‐ gate‐tunable optoelectronic reverse phenomenon are developed based on semimetal 1T′‐MoTe 2 ambipolar WSe . The device exhibits rectifying characters directional inversion energy band, yielding a wide range current rectification ratio 10 −2 3 clear object 100 × pixels. Acting as polarimetric photodetector, (PR) value reach steady state ≈30, which is compelling among state‐of‐the‐art 2D‐based polarized detectors. sign reversal polarization‐sensitive photocurrent by varying angles also observed, that enable PR potential cover possible numbers (1→+∞/‐∞→−1). This work develops detector phenomenon, making significant progress multifunction integration applications.

Язык: Английский

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Colossal in-plane optical anisotropy in a two-dimensional van der Waals crystal

Nature Photonics, Год журнала: 2024, Номер 18(11), С. 1170 - 1175

Опубликована: Авг. 8, 2024

Язык: Английский

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A library of ab initio Raman spectra for automated identification of 2D materials

Nature Communications, Год журнала: 2020, Номер 11(1)

Опубликована: Июнь 15, 2020

Raman spectroscopy is frequently used to identify composition, structure and layer thickness of 2D materials. Here, we describe an efficient first-principles workflow for calculating resonant first-order spectra solids within third-order perturbation theory employing a localized atomic orbital basis set. The method obtain the 733 different monolayers selected from computational materials database (C2DB). We benchmark scheme against available experimental data 15 known monolayers. Furthermore, propose automatic procedure identifying material based on input spectrum illustrate it cases MoS$_2$ (H-phase) WTe$_2$ (T$^\prime$-phase). all at excitation frequencies polarization configurations are freely C2DB. Our comprehensive easily accessible library \textit{ab initio} should be valuable both theoreticians experimentalists in field

Язык: Английский

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