Reconfigurable Multifunctional Semifloating Gate Transistors Based on the ReSe2/h-BN/Graphene van der Waals Heterostructure DOI
Wei Li,

Tianhui Mu,

Ze Sun

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Март 16, 2025

In the post-Moore era, semifloating gate devices have great potential to be developed into next-generation for their excellent nonvolatile memory and reconfigurable logic. 2D materials been focused due atomically flat surfaces, high carrier mobility, photoelectrical response. The ReSe2 is selected as a channel material its ambipolar characteristic outstanding optoelectronic Here, we fabricated ReSe2/h-BN/Gr multifunctional (MFSFG) devices, which can work bidirectional multistate P–N N–P homojunctions, photodetectors, artificial synaptic, logical, half-wave rectification devices. device exhibits large ratios of ∼106 (P–N) ∼104 (N–P) with endurance (1000 cycles) retention s). As photodetector, it obtains highest responsivity detectivity 1.98 A W–1 6.39 × 1012 Jones 0.93 2.00 (P–N), respectively, under 532 nm illumination. synaptic plasticity perfectly achieved, convolutional neural network built based on data has classification recognition accuracies 96.54 88.99%. logical ″XOR″, ″XNOR″, ″NAND″, ″OR″, functions are achieved single hybrid regulations. integration these various MFSFG not only broadens possibilities utilizing in but also opens up new avenues application neuromorphic computing logic-in-memory chips.

Язык: Английский

High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer DOI Creative Commons
Seung-Min Lee,

Seong Cheol Jang,

Jimin Park

и другие.

Nanomaterials, Год журнала: 2025, Номер 15(6), С. 418 - 418

Опубликована: Март 8, 2025

With the ongoing development of electronic devices, there is an increasing demand for new semiconductors beyond traditional silicon. A key element in circuits, complementary metal-oxide semiconductor (CMOS), utilizes both n-type and p-type semiconductors. While advancements have been substantial, high-mobility has lagged behind. Recently, tellurium (Te) recognized as a promising candidate due to its superior electrical properties capability large-area deposition via vacuum processes. In this work, innovative approach involving addition metal-capping layer onto Te thin-film transistors (TFTs) proposed, which significantly enhances their characteristics. particular, application indium (In) led dramatic increase field-effect mobility TFTs from 2.68 33.54 cm2/Vs. This improvement primarily oxygen scavenger effect, effectively minimizes oxidation eliminates layer, resulting production high-quality thin films. progress advancement high-performance devices various applications industries.

Язык: Английский

Процитировано

0
Reconfigurable Multifunctional Semifloating Gate Transistors Based on the ReSe2/h-BN/Graphene van der Waals Heterostructure DOI
Wei Li,

Tianhui Mu,

Ze Sun

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Март 16, 2025

In the post-Moore era, semifloating gate devices have great potential to be developed into next-generation for their excellent nonvolatile memory and reconfigurable logic. 2D materials been focused due atomically flat surfaces, high carrier mobility, photoelectrical response. The ReSe2 is selected as a channel material its ambipolar characteristic outstanding optoelectronic Here, we fabricated ReSe2/h-BN/Gr multifunctional (MFSFG) devices, which can work bidirectional multistate P–N N–P homojunctions, photodetectors, artificial synaptic, logical, half-wave rectification devices. device exhibits large ratios of ∼106 (P–N) ∼104 (N–P) with endurance (1000 cycles) retention s). As photodetector, it obtains highest responsivity detectivity 1.98 A W–1 6.39 × 1012 Jones 0.93 2.00 (P–N), respectively, under 532 nm illumination. synaptic plasticity perfectly achieved, convolutional neural network built based on data has classification recognition accuracies 96.54 88.99%. logical ″XOR″, ″XNOR″, ″NAND″, ″OR″, functions are achieved single hybrid regulations. integration these various MFSFG not only broadens possibilities utilizing in but also opens up new avenues application neuromorphic computing logic-in-memory chips.

Язык: Английский

Процитировано

0