Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits

ACS Nano, Год журнала: 2024, Номер 18(11), С. 7739 - 7768

Опубликована: Март 8, 2024

Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As acknowledged ultimate version transistor channels, 2D semiconductors interest development post-Moore electronics due to useful properties and all-in-one potentials. Here, promise current status reviewed, from materials devices integrated applications. First, we outline evolution challenges silicon-based circuits, followed by detailed discussion on preparation strategies van der Waals heterostructures. Subsequently, significant progress transistors, including device optimization, large-scale integration, unconventional devices, presented. We also examine advanced heterogeneous multifunctional integration beyond CMOS. Finally, key technical potential circuits discussed. envision that field could yield substantial in upcoming years hope this review will trigger scientists planning next experiment.

Язык: Английский

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Two-dimensional transition-metal dichalcogenide–based bilayer heterojunctions for efficient solar cells and photocatalytic applications

Physical Review Applied, Год журнала: 2025, Номер 23(1)

Опубликована: Янв. 6, 2025

We present a first-principles investigation of the optoelectronic properties vertically stacked bilayer heterostructures composed 2D transition-metal dichalcogenides (TMDs). The calculations are performed with density-functional theory as well many-body perturbation within G0W0–Bethe-Salpeter-equation method. Our aim is to propose these TMD for potential applications in solar cells. monolayers constituting heterojunctions considered this research MoS2, WS2, MoSe2, and WSe2 due their favorable band gaps, high carrier mobility, robust absorption visible region, excellent stability. These four provide basis total six (WS2/MoS2, MoSe2/MoS2, MoSe2/WS2, WSe2/MoS2, WSe2/MoSe2, WSe2/WS2) whose structural, electronic, optical have been studied work. At density-functional-theory level, all meet essential criterion type-II alignment, critical factor extending lifetime. However, according G0W0 results, MoSe2/WS2 does not exhibit alignment; instead it shows type-I alignment. significantly large quasiparticle gaps obtained from approximation suggest presence strong electron-correlation effects. superior compared respective isolated monolayers. Quite-significant values intrinsic electric fields that arise asymmetric geometry obtained. Additionally, small nearly equal electron hole effective masses indicate mobility efficient charge-carrier separation, resulting low recombination losses. quality heterojunction cells estimated by computing power-conversion efficiencies (PCEs). PCEs calculated at both HSE06 level maximum PCE predicted on our designed 19.25% WSe2/WS2 heterojunction. In addition, examined photocatalysis hydrogen-evolution reaction, three them—namely, WS2/MoS2, WSe2/MoS2 heterostructures—qualify photocatalysts. locked icon Physics Subject Headings (PhySH)Electronic structureOptoelectronicsPhotocatalysisBilayer filmsSolar cellsTransition metal dichalcogenidesDensity functional calculationsGW method

Язык: Английский

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WSe₂ Negative Capacitance Field-Effect Transistor for Biosensing Applications

ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(32), С. 42597 - 42607

Опубликована: Авг. 5, 2024

Field-effect transistor (FET) biosensors based on two-dimensional (2D) materials are highly sought after for their high sensitivity, label-free detection, fast response, and ease of on-chip integration. However, the subthreshold swing (SS) FETs is constrained by Boltzmann limit cannot fall below 60 mV/dec, hindering sensor sensitivity enhancement. Additionally, gate-leakage current 2D material in liquid environments significantly increases, adversely affecting detection accuracy stability. Based principle negative capacitance, this paper presents first time a WSe2 capacitance field-effect (NCFET) with minimum 56 mV/dec aqueous solution. The NCFET shows improved biosensor function. pH reaches 994 pH–1, nearly an order magnitude higher than that traditional FET biosensor. Al2O3/HfZrO (HZO) bilayer dielectric not only contributes to characteristics solution but also reduces leakage Utilizing enzyme catalysis method, demonstrates specific glucose molecules, achieving 4800 A/A 5 mM low (10–9 M). Further experiments exhibit ability detect sweat.

Язык: Английский

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Graphene-based field-effect transistor biosensor for prostate-specific antigen detection

Microchemical Journal, Год журнала: 2024, Номер 205, С. 111346 - 111346

Опубликована: Авг. 6, 2024

Язык: Английский

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A CIPS-based negative capacitance field-effect transistor biosensor with extended-gate structure

Applied Physics Letters, Год журнала: 2025, Номер 126(19)

Опубликована: Май 12, 2025

Biosensors based on field-effect transistor (FET) have advantages of label-free detection, rapid response, small size, and good compatibility with semiconductor manufacturing process. However, their sensitivities are limited by the Boltzmann distribution electrons. Negative capacitance effect has potential to address this challenge. Here, we realize two-dimensional (2D) van der Waals (vdW) heterojunction negative transistors (NCFETs) MoS2 channel, CuInP2S6 ferroelectric layer, graphene contacts, hexagonal boron nitride dielectric top gate. The devices exhibit excellent electrical performance on–off ratio 106 subthreshold swing 26 mV/dec. Due ultrasmall value, NCFET demonstrates a high pH detection sensitivity (675.8 pH−1), significantly outperforming traditional 2D-material FET biosensors (445.5 pH−1). An extended-gate structure TiN sensing membrane is connected NCFET. This prevents leakage current between solution gate dielectric, which can improve stability biosensor. work provides insights into design biochemical platform. observation in all-2D-material-based biosensor may stimulate further fundamental research applications.

Язык: Английский

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2D Materials‐Based Field‐Effect Transistor Biosensors for Healthcare

Small, Год журнала: 2024, Номер unknown

Опубликована: Дек. 10, 2024

Abstract The need for accurate point‐of‐care (POC) tools, driven by increasing demands precise medical diagnostics and monitoring, has accelerated the evolution of biosensor technology. Integrable 2D materials‐based field‐effect transistor (2D FET) biosensors offer label‐free, rapid, ultrasensitive detection, aligning perfectly with current trends. Given these advancements, this review focuses on progress, challenges, future prospects in field FET biosensors. distinctive physical properties materials recent achievements scalable synthesis are highlighted that significantly improve manufacturing process performance Additionally, advancements investigated fatal disease diagnosis screening, chronic management, environmental hazards as well their integration flexible electronics. Their promising capabilities shown laboratory trials accelerate development prototype products, while challenges acknowledged, related to sensitivity, stability, scalability continue impede widespread adoption commercialization Finally, strategies discussed overcome envision implications biosensors, such potential smart sustainable POC thereby advancing human healthcare.

Язык: Английский

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A Review

IEEE Nanotechnology Magazine, Год журнала: 2024, Номер 18(4), С. 4 - 14

Опубликована: Июнь 18, 2024

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Engineering Ta-doped MoSex sensitive films in extended-gate field-effect transistors for ultrahigh sensitivity detection of epinephrine at fM levels

Journal of Industrial and Engineering Chemistry, Год журнала: 2024, Номер unknown

Опубликована: Июль 1, 2024

Язык: Английский

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Multifunctional Integrated Biosensors Based on Two-Dimensional Field-Effect Transistors

ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(51), С. 70160 - 70173

Опубликована: Дек. 11, 2024

In recent years, field-effect transistor (FET) sensing technology has attracted significant attention owing to its noninvasive, label-free, real-time, and user-friendly detection capabilities. Owing the large specific surface area, high flexibility, excellent conductivity of two-dimensional (2D) materials, FET biosensors based on 2D materials have demonstrated unique potential in biomarker analysis healthcare applications, driving continuous innovation transformation field. Here, we review trends development key performance metrics main characteristics, also discuss structural designs modification strategies for biosensing devices utilizing graphene, transition metal dichalcogenides, black phosphorus, other enhance metrics. Finally, offer insights into future directions biosensor advancements, improvements, present new recommendations practical clinical applications.

Язык: Английский

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