Flexible High-Temperature MoS₂ Field-Effect Transistors and Logic Gates

ACS Nano, Год журнала: 2024, Номер 18(13), С. 9627 - 9635

Опубликована: Март 15, 2024

High-temperature-resistant integrated circuits with excellent flexibility, a high integration level (nanoscale transistors), and low power consumption are highly desired in many fields, including aerospace. Compared conventional SiC high-temperature transistors, transistors based on two-dimensional (2D) MoS2 have advantages of superb atomic scale, ultralow consumption. However, cannot survive at temperature drastically degrades above 200 °C. Here, we report field-effect (FETs) top/bottom hexagonal boron nitride (h-BN) encapsulation graphene electrodes. With the protection h-BN/h-BN structure, devices can much higher (≥500 °C air) than those ever reported, which provides us an opportunity to explore electrical properties working mechanism temperature. Unlike relatively low-temperature situation, on/off ratio subthreshold swing FETs show drastic variation elevated due injection thermal emission carriers. metal electrode, electrode demonstrate superior performance (∼1-order-larger current ratio, 3–7 times smaller swing, 5–9 threshold voltage shift). We further realize that flexible CMOS NOT gate technique, logic computing 550 This work may stimulate fundamental research 2D materials temperature, also creates conditions for next-generation harsh-environment-resistant circuits.

Язык: Английский

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Ionotronic WS2 memtransistors for 6-bit storage and neuromorphic adaptation at high temperature

npj 2D Materials and Applications, Год журнала: 2023, Номер 7(1)

Опубликована: Сен. 9, 2023

Abstract Inspired by massive parallelism, an increase in internet-of-things devices, robust computation, and Big-data, the upsurge research building multi-bit mem-transistors is ever-augmenting with different materials, mechanisms, state-of-the-art architectures. Herein, we demonstrate monolayer WS 2 -based functional mem-transistor devices which address nonvolatility synaptic operations at high temperature. The ionotronic memory based on exhibit reverse hysteresis windows larger than 25 V, extinction ratio greater 10 6 . show stable retention endurance 100 sweep cycles 400 pulse addition to 6-bit (64 distinct nonvolatile storage levels) pulse-programmable features ranging over six orders of current magnitudes (10 −12 –10 −6 A). origin states attributed carrier dynamics under electrostatic doping fluctuations induced mobile ions, illustrated employing a fingerprint mechanism including band-bending pictures. credibility all confirmed obtaining reliable signal-to-noise ratios. We also key neuromorphic behaviors, such as plasticity, near linear potentiation, depression, rendering it suitable for successful implementation temperature computing. Furthermore, artificial neural network simulations conductance weight update characteristics proposed are performed explore potency accurate image recognition. Our findings showcase class thermally aided memories 2D semiconductors unlocking promising avenues applications demanding electronics forthcoming computing technologies.

Язык: Английский

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Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits

ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(15), С. 19225 - 19234

Опубликована: Апрель 5, 2024

Innovations in resistive switching devices constitute a core objective for the development of ultralow-power computing devices. Forming-free is type that eliminates need an initial high voltage formation conductive filaments and offers promising opportunities to overcome limitations traditional Here, we demonstrate mixed charge state oxygen vacancy-engineered electroforming-free NiFe2O4 (NFO) thin films, fabricated as asymmetric Ti/NFO/Pt heterostructures, first time. Using pulsed laser deposition controlled atmosphere, tune vacancies together with cationic valence nickel ferrite phase, latter directly affecting vacancies. The structural integrity chemical composition films are confirmed by X-ray diffraction hard photoelectron spectroscopy, respectively. Electrical transport studies reveal characteristics can be significantly altered tuning amount vacancy concentration during films. mechanism seen depend upon migration both singly doubly charged formed result changes consequent formation/rupture conducting layer. This supported existence optimum efficient low-voltage switching, below or above which process inhibited. Along filamentary mechanism, Ti top electrode also enhances performance due interfacial effects. Time-resolved measurements on display long- short-term potentiation optimized NFO switches, ideal solid-state synapses achieved single system. Our work correlated oxide forming-free switches holds significant potential CMOS-compatible low-power, nonvolatile memory neuromorphic circuits.

Язык: Английский

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Advances in two-dimensional heterojunction for sophisticated memristors

Materials Today Physics, Год журнала: 2024, Номер 41, С. 101336 - 101336

Опубликована: Янв. 11, 2024

Язык: Английский

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Programmable Optoelectronic Synaptic Transistors Based on MoS₂/Ta₂NiS₅ Heterojunction for Energy‐Efficient Neuromorphic Optical Operation

Small, Год журнала: 2024, Номер unknown

Опубликована: Май 22, 2024

Abstract The optoelectronic synaptic transistors with various functions, broad spectral perception, and low power consumption are an urgent need for the development of advanced optical neural network systems. However, it remains a great challenge to realize functional diversification systems on single device. 2D van der Waals (vdW) materials can combine unique properties by stacking each other form heterojunctions, which may provide strategy solving this problem. Herein, all‐2D vdW heterojunction‐based programmable transistor based MoS 2 /Ta NiS 5 heterojunctions is demonstrated. device implements reconfigurable, multilevel non‐volatile memory (NVM) states through sequential modulation multiple electrical stimuli achieve broadband (532–808 nm), energy‐efficient (17.2 fJ), hetero‐synaptic functionality in bionic manner. intrinsic working mechanisms photogating effect caused band alignment interfacial trapping defect induced gate voltage revealed Kelvin‐probe force microscopy (KPFM) measurements carrier transport analysis. Overall, (opto)electronic weight controllability combined in‐sensor in‐memory logic processors realized heterojunction properties. proposed findings facilitate technical realization generic all hetero‐synapses future artificial vision systems, opto‐logical Internet Things (IoT) entities.

Язык: Английский

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Investigating the Role of Interfacial Layer for Resistive Switching in a Hybrid Dion-Jacobson Perovskite-Based Memristor

ACS Applied Electronic Materials, Год журнала: 2023, Номер 5(9), С. 5249 - 5256

Опубликована: Сен. 13, 2023

In-memory computing enables fast and low power consumption by overcoming major drawbacks of traditional computers built with a von Neumann architecture. In memristor, multilevel storage history-dependent conductivity modulation characteristics allow us to store the information simulate synaptic behaviors mimic biological brain. this work, role interfacial layers has been investigated in suppression charge transfer barrier Dion-Jacobson hybrid perovskite-based memristor devices. The insertion between active layer electrodes (ITO/PEDOT:PSS/Active layer/PMMA/Ag) improves ON/OFF ratio (103), data endurance (102), retention (>6000 s) for nonvolatile applications 3-(aminomethyl) piperidinium (3AMP) organic spacer cation-based presence reduces SET voltage 0.33 V energy an estimated value ∼26 nJ. A mathematical model is presented fitted experimental understand formation/rupture conducting filament resistive switching mechanism. Neuromorphic properties like learning forgetting nature device (potentiation depression), inhibitory postsynaptic current, spike number dependent plasticity, paired pulse facilitation index are also systematically presented. Thus, potential human brain processes these memristors profound implications artificial intelligence, robotics, brain-machine interfaces, shaping future cognitive AI-driven technologies.

Язык: Английский

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Highly Reconfigurable Logic‐In‐Memory Operations in Tunable Gaussian Transistors for Multifunctional Image Processing

Advanced Functional Materials, Год журнала: 2023, Номер 34(4)

Опубликована: Окт. 19, 2023

Abstract Reconfigurable logic‐in‐memory device, albeit a promising hardware platform for constructing parallel computing architectures, still suffers from high power‐consumption and low area‐efficiency arising the circuit redundancy in silicon (Si) based technical path. 2D materials are identified as potential building blocks to significantly reduce footprints with outstanding power‐efficiency, owing their atomically thin nature unique electronic properties. However, present logic devices primarily on single channel homogeneous transport polarities, limiting device reconfigurability multi‐functional applications. Here, p–n junction dual‐gate Gaussian‐type transistors simplified reconfigurable circuits reported. All fundamental Boolean operators implemented electrically driven reconfigurability, giving rise an ultra‐low transistor consumption down 13% of traditional circuits. The is also demonstrated reliable image processing unit various tasks (pixel processing, comparing, ciphering) by executing corresponding operations. Moreover, situ memory logics achieved engineering dielectric properties without compromising its reconfigurability. These findings provide approach achieving operations at level, significant implications advancement computing.

Язык: Английский

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Reconfigurable Logic Gates Capable of Device‐Level Parallel Processing Through Multi‐Input Synaptic Device

Advanced Functional Materials, Год журнала: 2024, Номер 34(32)

Опубликована: Апрель 19, 2024

Abstract Synaptic devices have gained prominence as viable alternatives to conventional complementary metal‐oxide‐semiconductor‐based (CMOS) electronics in the information processing field owing their inherent advantages analog and parallel operations. The potential of synaptic has not yet been fully utilized for logic operations because only binary structure applied devices, leading loss unique signals. To resolve this issue, an innovative concept is proposed: gate that can perform at device level coupled with reconfigurations, enabling comprehensive computation. This comprises two different retention characteristics, adjusted by side‐chain engineering organic polymer. long‐term short‐term serve reconfigurable synapse mode selection processable synapse, respectively. In study, circuit effectively implemented a personalized disease risk diagnostic system. approach allows simultaneous computation analog‐formed data, but also enhances both computing efficiency system complexity general systems.

Язык: Английский

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Two-dimensional materials based memtransistors: Integration strategies, switching mechanisms and advanced characterizations

Nano Energy, Год журнала: 2024, Номер 128, С. 109861 - 109861

Опубликована: Июнь 7, 2024

Язык: Английский

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Direct Transfer of Monolayer MoS₂ Device Arrays for Potential Applications in Flexible Electronics

ACS Applied Nano Materials, Год журнала: 2024, Номер 7(5), С. 4796 - 4804

Опубликована: Фев. 16, 2024

Transfer techniques of two-dimensional (2D) materials and devices offer nanoscale integration with the existing silicon-based technology flexible electronics. To date, chemical etching technique is being widely used for transfer 2D materials, there has been constant effort in improving method to achieve an etching-free clean without affecting device performances. Herein, we demonstrate a poly(methyl methacrylate) (PMMA)-assisted one-step approach arrays consisting monolayer MoS2 metal electrodes different substrates (i.e., SiO2/Si, flexible). The crystalline quality, strain relaxation, interfacial coupling effects transferred are analyzed using Raman photoluminescence spectroscopy. room-temperature gate-tunable drain current measurements on SiO2/Si substrate show reduced Fermi-level pinning effect. Furthermore, observation from temperature-dependent threshold voltage shifts, mobilities, hysteresis evolution indicates improved transistor performance device. proposed could be useful large array material arbitrary future optoelectronic applications.

Язык: Английский

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